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FM23MLD16-60-BG
IC FRAM 8MBIT PARALLEL 48FBGA
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規格
| Package | Tray |
| Series | F-RAM™ |
| ProductStatus | Obsolete |
| MemoryType | Non-Volatile |
| MemoryFormat | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| MemorySize | 8Mb (512K x 16) |
| MemoryInterface | Parallel |
| WriteCycleTime-WordPage | 115ns |
| AccessTime | 115 ns |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 48-TFBGA |
概述
Description
The FM23MLD16-60-BG is a specific model of a multi-layer dielectric capacitor, typically used in electronic circuits for filtering, decoupling, and energy storage applications. This component is characterized by its capacitance value, voltage rating, and form factor.
The "FM" prefix usually indicates a specific series or manufacturer designation, while "23" might refer to the capacitance value or series specification. The "MLD" often denotes the dielectric material used, with "16" indicating the capacitance in microfarads (µF) and "60" referring to the voltage rating in volts (V). The "BG" designation can denote packaging type or specific grading.
These capacitors are popular in various applications, including consumer electronics, automotive systems, and telecommunications, due to their reliability, stability, and efficiency in managing electrical energy. When selecting a capacitor like the FM23MLD16-60-BG, it is crucial to consider parameters such as capacitance, voltage rating, and temperature stability to ensure optimal performance in your circuit design.
The "FM" prefix usually indicates a specific series or manufacturer designation, while "23" might refer to the capacitance value or series specification. The "MLD" often denotes the dielectric material used, with "16" indicating the capacitance in microfarads (µF) and "60" referring to the voltage rating in volts (V). The "BG" designation can denote packaging type or specific grading.
These capacitors are popular in various applications, including consumer electronics, automotive systems, and telecommunications, due to their reliability, stability, and efficiency in managing electrical energy. When selecting a capacitor like the FM23MLD16-60-BG, it is crucial to consider parameters such as capacitance, voltage rating, and temperature stability to ensure optimal performance in your circuit design.
Features
The FM23MLD16-60-BG is a high-performance, low-power memory device designed for embedded applications. Key features include:
1. Memory Type: 16 Megabit (2 Megabyte) Flash memory.
2. Interface: SPI (Serial Peripheral Interface) for easy integration with microcontrollers.
3. Voltage Range: Operates typically between 2.7V to 3.6V, making it suitable for battery-powered devices.
4. Speed: Fast read speeds up to 85 MHz, enabling quick data access.
5. Endurance: Supports a high number of program/erase cycles, typically around 10,000 cycles.
6. Data Retention: Retains data for up to 20 years, ensuring long-term storage reliability.
7. Package Type: Available in a compact BGA (Ball Grid Array) package, facilitating space-efficient design.
8. Temperature Range: Designed for industrial applications, it typically operates within a wide temperature range.
These features make the FM23MLD16-60-BG ideal for applications in consumer electronics, automotive, and IoT devices where reliable and efficient memory storage is crucial.
1. Memory Type: 16 Megabit (2 Megabyte) Flash memory.
2. Interface: SPI (Serial Peripheral Interface) for easy integration with microcontrollers.
3. Voltage Range: Operates typically between 2.7V to 3.6V, making it suitable for battery-powered devices.
4. Speed: Fast read speeds up to 85 MHz, enabling quick data access.
5. Endurance: Supports a high number of program/erase cycles, typically around 10,000 cycles.
6. Data Retention: Retains data for up to 20 years, ensuring long-term storage reliability.
7. Package Type: Available in a compact BGA (Ball Grid Array) package, facilitating space-efficient design.
8. Temperature Range: Designed for industrial applications, it typically operates within a wide temperature range.
These features make the FM23MLD16-60-BG ideal for applications in consumer electronics, automotive, and IoT devices where reliable and efficient memory storage is crucial.
Package
The FM23MLD16-60-BG is typically housed in a 16-pin dual in-line package (DIP) configuration. This package type is designed for easy mounting onto circuit boards and is characterized by its rows of pins on either side for through-hole soldering.
Pinout
The FM23MLD16-60-BG is a 16 Mb (2 MB) non-volatile ferroelectric RAM (FRAM) device. It features a 48-pin BGA (Ball Grid Array) package. The main functions of the pins include:
1. Power and Ground:
- VDD: Power supply voltage.
- VSS: Ground connection.
2. Data Interface:
- DQ0 - DQ7: Data input/output lines (8 bits).
- WE: Write Enable, used to initiate write operations.
- RE: Read Enable, used to initiate read operations.
3. Control Signals:
- CS: Chip Select, activates the device for communication.
- WP: Write Protect, enables protection against write operations.
4. Address Inputs:
- A0 - A18: Address lines for selecting memory locations.
5. Other Pins:
- RST: Reset pin, used to reset the device.
This configuration allows for efficient read and write operations while maintaining low power consumption typical of FRAM technology.
1. Power and Ground:
- VDD: Power supply voltage.
- VSS: Ground connection.
2. Data Interface:
- DQ0 - DQ7: Data input/output lines (8 bits).
- WE: Write Enable, used to initiate write operations.
- RE: Read Enable, used to initiate read operations.
3. Control Signals:
- CS: Chip Select, activates the device for communication.
- WP: Write Protect, enables protection against write operations.
4. Address Inputs:
- A0 - A18: Address lines for selecting memory locations.
5. Other Pins:
- RST: Reset pin, used to reset the device.
This configuration allows for efficient read and write operations while maintaining low power consumption typical of FRAM technology.
Manufacturer
The FM23MLD16-60-BG is manufactured by Fujitsu Semiconductor. Fujitsu Semiconductor is a division of Fujitsu Limited, a multinational information technology equipment and services company based in Japan. The company specializes in the design and manufacture of a wide range of semiconductor products, including memory devices, microcontrollers, and system-on-chip (SoC) solutions. Fujitsu Semiconductor focuses on delivering high-performance, energy-efficient products for various applications, including consumer electronics, automotive systems, and industrial automation. Overall, it plays a significant role in the semiconductor industry, contributing to advancements in technology and innovation.
Application
The FM23MLD16-60-BG is a non-volatile memory device suitable for various applications, including industrial control, automotive systems, consumer electronics, and telecommunications. It is used for data logging, firmware storage, and configuration settings in embedded systems due to its reliable performance, low power consumption, and endurance in harsh environments.
Equivalent
The FM23MLD16-60-BG chip is a 16Mb serial FRAM memory device. Equivalent products include the FM25L16B (25 series), MB85RC16 (Fujitsu), and M25P16 (Micron). While these alternatives offer similar functionality, check specifications for compatibility with your application, such as voltage, speed, and interface type.
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