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FDS9958
MOSFET 2P-CH 60V 2.9A 8-SO
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- 製造商。 部分 #FDS9958
- 包 SOIC-8
- 資料表 FDS9958 DataSheet
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 2.9A |
| RdsOn(Max)@IdVgs | 105mOhm @ 2.9A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 23nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 1020pF @ 30V |
| Power-Max | 900mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概述
Description
FDS9958 is likely a course or module related to food science, nutrition, or a similar field, focusing on advanced topics within that domain. It may cover subjects such as food safety, food technology, sensory evaluation, or nutrition science, aimed at providing students with a comprehensive understanding of current trends and research in food and dietary studies. Typically, the course would involve lectures, practical assessments, and possibly projects that encourage critical thinking and application of knowledge in real-world scenarios.
If you need specific details about its curriculum, prerequisites, or learning outcomes, please consult the official course syllabus or academic institution offering it.
If you need specific details about its curriculum, prerequisites, or learning outcomes, please consult the official course syllabus or academic institution offering it.
Features
The FDS9958 is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Low RDS(on): Provides low on-resistance for efficient conduction, minimizing power loss.
2. High Voltage Rating: Supports drain-source voltages up to 30V, making it suitable for various applications.
3. Fast Switching Speed: Capable of rapid switching, enhancing performance in high-frequency applications.
4. Thermal Management: Designed with a robust package that aids in heat dissipation, allowing for improved thermal performance.
5. Gate Threshold Voltage: Optimized for low gate drive requirements, which simplifies circuit design.
6. Applications: Commonly used in DC-DC converters, motor drives, and load switching.
These features make the FDS9958 an excellent choice for modern electronic designs that require efficiency and reliability.
1. Low RDS(on): Provides low on-resistance for efficient conduction, minimizing power loss.
2. High Voltage Rating: Supports drain-source voltages up to 30V, making it suitable for various applications.
3. Fast Switching Speed: Capable of rapid switching, enhancing performance in high-frequency applications.
4. Thermal Management: Designed with a robust package that aids in heat dissipation, allowing for improved thermal performance.
5. Gate Threshold Voltage: Optimized for low gate drive requirements, which simplifies circuit design.
6. Applications: Commonly used in DC-DC converters, motor drives, and load switching.
These features make the FDS9958 an excellent choice for modern electronic designs that require efficiency and reliability.
Package
The FDS9958 is available in a TO-220 package type. This package is commonly used for power MOSFETs and provides efficient thermal performance and ease of mounting for applications in power management.
Pinout
The FDS9958 is a dual N-channel MOSFET in a 8-pin SO-8 package. It features two separate transistors, each designed for efficient switching applications. The key pin functions are as follows:
1. Pin 1 (D1): Drain of the first N-channel MOSFET.
2. Pin 2 (G1): Gate of the first N-channel MOSFET.
3. Pin 3 (S1): Source of the first N-channel MOSFET.
4. Pin 4 (S2): Source of the second N-channel MOSFET.
5. Pin 5 (G2): Gate of the second N-channel MOSFET.
6. Pin 6 (D2): Drain of the second N-channel MOSFET.
7. Pin 7 (D1): Drain of the first N-channel MOSFET (Duplicate).
8. Pin 8 (D2): Drain of the second N-channel MOSFET (Duplicate).
The transistors are optimized for low on-resistance and fast switching, making them suitable for power management and DC-DC conversion applications.
1. Pin 1 (D1): Drain of the first N-channel MOSFET.
2. Pin 2 (G1): Gate of the first N-channel MOSFET.
3. Pin 3 (S1): Source of the first N-channel MOSFET.
4. Pin 4 (S2): Source of the second N-channel MOSFET.
5. Pin 5 (G2): Gate of the second N-channel MOSFET.
6. Pin 6 (D2): Drain of the second N-channel MOSFET.
7. Pin 7 (D1): Drain of the first N-channel MOSFET (Duplicate).
8. Pin 8 (D2): Drain of the second N-channel MOSFET (Duplicate).
The transistors are optimized for low on-resistance and fast switching, making them suitable for power management and DC-DC conversion applications.
Manufacturer
The FDS9958 is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor following a merger in 2016. Fairchild Semiconductor was known for its role in the semiconductor industry, particularly in the design and manufacturing of a wide range of electronic components, including power management, signal conditioning, and analog devices. The company specialized in providing innovative solutions for various applications in automotive, consumer electronics, industrial, and communications. ON Semiconductor continues this legacy, offering a broad portfolio of semiconductor solutions that cater to diverse markets, emphasizing energy efficiency and performance.
Application
FDS9958 is a dual N-channel MOSFET used primarily in power management applications. Its application areas include DC-DC converters, load switching, and battery management systems. It is suitable for use in consumer electronics, automotive systems, and industrial equipment due to its high efficiency, fast switching speeds, and thermal performance.
Equivalent
The FDS9958 is a dual N-channel MOSFET. Equivalent products include the BSS138, FDS8858, and FDS6676. For specific applications, you may also consider the AO3400 or IRLML2502. Always check the datasheets for exact specifications like voltage, current ratings, and gate thresholds to ensure compatibility.
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