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FDS9412
MOSFET N-CH 30V 7.9A 8SOIC
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規格
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 7.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.9A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | FDS94 |
概述
Description
FDS9412 is a dual N-channel MOSFET designed for a variety of power management applications. It features low on-resistance, high-speed switching, and enhanced thermal performance, making it suitable for applications such as power supply converters, motor drivers, and battery management systems.
Key specifications typically include a voltage rating of 30V and a current rating that can handle significant loads, with efficiency optimized for modern electronics. The device is packaged in a compact surface-mount format, facilitating easy integration into circuit designs.
Manufacturers may provide application notes and reference designs to help engineers utilize the FDS9412 effectively, emphasizing its capability to reduce power losses and increase system reliability. As part of a broader portfolio of MOSFETs, the FDS9412 plays a crucial role in enabling efficient energy management in consumer electronics, automotive applications, and industrial systems.
Key specifications typically include a voltage rating of 30V and a current rating that can handle significant loads, with efficiency optimized for modern electronics. The device is packaged in a compact surface-mount format, facilitating easy integration into circuit designs.
Manufacturers may provide application notes and reference designs to help engineers utilize the FDS9412 effectively, emphasizing its capability to reduce power losses and increase system reliability. As part of a broader portfolio of MOSFETs, the FDS9412 plays a crucial role in enabling efficient energy management in consumer electronics, automotive applications, and industrial systems.
Features
The FDS9412 is a dual N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Low On-Resistance: The FDS9412 offers a low R_DS(on) value, which minimizes power loss and improves efficiency in power management and conversion applications.
2. High Current Capability: It supports high continuous current ratings, making it suitable for use in various configurations, including synchronous rectification.
3. Fast Switching Speed: The device enables rapid switching, which is essential for high-frequency applications and enhances overall system performance.
4. Compact Package: Typically available in a compact surface-mount package, it aids in space-saving designs and simplifies PCB layout.
5. Low Gate Charge: The low gate charge (Q_g) reduces the drive requirements and improves efficiency in switching applications.
6. Thermal Performance: The device is designed for effective thermal management, with a robust thermal resistance to ensure reliability in demanding environments.
These features make the FDS9412 an excellent choice for applications like power supplies, motor drivers, and DC-DC converters.
1. Low On-Resistance: The FDS9412 offers a low R_DS(on) value, which minimizes power loss and improves efficiency in power management and conversion applications.
2. High Current Capability: It supports high continuous current ratings, making it suitable for use in various configurations, including synchronous rectification.
3. Fast Switching Speed: The device enables rapid switching, which is essential for high-frequency applications and enhances overall system performance.
4. Compact Package: Typically available in a compact surface-mount package, it aids in space-saving designs and simplifies PCB layout.
5. Low Gate Charge: The low gate charge (Q_g) reduces the drive requirements and improves efficiency in switching applications.
6. Thermal Performance: The device is designed for effective thermal management, with a robust thermal resistance to ensure reliability in demanding environments.
These features make the FDS9412 an excellent choice for applications like power supplies, motor drivers, and DC-DC converters.
Package
The FDS9412 is available in a SO-8 package type. This surface-mount package is commonly used for integrated circuits and provides a compact design for efficient space utilization on circuit boards.
Pinout
The FDS9412 is a dual N-channel MOSFET in a small footprint package, specifically designed for high-efficiency applications. It typically comes in a 8-pin SOIC (Small Outline Integrated Circuit) package.
### Pin Count:
- Total Pins: 8
### Pin Functions:
1. Gate (G1): Controls the switching of the first N-channel MOSFET.
2. Drain (D1): Connects to the load for the first MOSFET.
3. Source (S1): Ground or negative voltage connection for the first MOSFET.
4. Gate (G2): Controls the switching of the second N-channel MOSFET.
5. Drain (D2): Connects to the load for the second MOSFET.
6. Source (S2): Ground or negative voltage connection for the second MOSFET.
7. Drain (D1/D2): Common or shared drain connection (depends on specific application).
8. Source (S1/S2): Common or shared source connection (depends on specific application).
This MOSFET configuration is typically used in power management applications, such as DC-DC converters.
### Pin Count:
- Total Pins: 8
### Pin Functions:
1. Gate (G1): Controls the switching of the first N-channel MOSFET.
2. Drain (D1): Connects to the load for the first MOSFET.
3. Source (S1): Ground or negative voltage connection for the first MOSFET.
4. Gate (G2): Controls the switching of the second N-channel MOSFET.
5. Drain (D2): Connects to the load for the second MOSFET.
6. Source (S2): Ground or negative voltage connection for the second MOSFET.
7. Drain (D1/D2): Common or shared drain connection (depends on specific application).
8. Source (S1/S2): Common or shared source connection (depends on specific application).
This MOSFET configuration is typically used in power management applications, such as DC-DC converters.
Manufacturer
The FDS9412 is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor, established in 1957, was a pioneer in the semiconductor industry and is known for its innovations in power management, analog, and digital solutions. The company primarily focuses on producing discrete semiconductors, integrated circuits, and power modules for various applications, including automotive, industrial, and consumer electronics. ON Semiconductor, which acquired Fairchild in 2016, continues to develop and manufacture a wide range of semiconductor products, emphasizing energy efficiency and sustainability in its technological advancements.
Application
The FDS9412 is a dual N-channel MOSFET commonly used in various applications including power management circuits, DC-DC converters, load switches, battery management systems, and motor control. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power conversion and thermal management in consumer electronics, automotive systems, and industrial equipment.
Equivalent
The FDS9412 is a dual N-channel MOSFET in a SO-8 package commonly used for power management applications. Equivalent products include the AO3400, BSS123, and Si2302. When searching for equivalents, ensure similar specifications like V_DS, I_D, and R_DS(on) to match your application requirements. Always consult the datasheets for detailed electrical characteristics.
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