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FDS6930B
MOSFET 2N-CH 30V 5.5A 8SOIC
- 製造商
- 製造商。 部分 #FDS6930B
- 包 8-SOIC (0.154, 3.90mm Width)
- 資料表 FDS6930B DataSheet
- 有現貨的8491
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規格
| Supplier | onsemi,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 5.5A |
| RdsOn(Max)@IdVgs | 38mOhm @ 5.5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 3.8nC @ 5V |
| InputCapacitance(Ciss)(Max)@Vds | 412pF @ 15V |
| Power-Max | 900mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概述
Description
FDS6930B is a course focusing on advanced topics in food and dairy sciences, emphasizing the integration of science and technology in food production, safety, and quality. It covers critical areas such as food microbiology, processing techniques, and nutritional aspects, enabling students to analyze and innovate within the food industry. The curriculum typically includes lectures, hands-on laboratory experiences, and research projects, fostering a comprehensive understanding of contemporary issues and challenges in food systems. Students are encouraged to apply theoretical knowledge to real-world problems, preparing them for careers in food science, quality assurance, and regulatory affairs. By the end of the course, participants should be equipped with the skills to contribute to advancements in food technology and safety practices.
Features
The FDS6930B is a dual N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Low On-Resistance: Ensures minimal power loss during operation, enhancing efficiency.
2. High-Speed Switching: Provides fast switching capabilities, suitable for applications like DC-DC converters and load switches.
3. Voltage Rating: Typically supports a drain-source voltage of up to 30V, making it versatile for various low-voltage applications.
4. Compact Package: Often available in a surface-mount package (e.g., SO-8), facilitating space-saving designs.
5. Thermal Performance: Designed to handle significant power dissipation, improving reliability in demanding environments.
6. Low Gate Charge: Offers reduced drive power for lower heat generation in the gate drive circuit.
These features make the FDS6930B ideal for consumer electronics, automotive systems, and other electronic devices requiring efficient power switching.
1. Low On-Resistance: Ensures minimal power loss during operation, enhancing efficiency.
2. High-Speed Switching: Provides fast switching capabilities, suitable for applications like DC-DC converters and load switches.
3. Voltage Rating: Typically supports a drain-source voltage of up to 30V, making it versatile for various low-voltage applications.
4. Compact Package: Often available in a surface-mount package (e.g., SO-8), facilitating space-saving designs.
5. Thermal Performance: Designed to handle significant power dissipation, improving reliability in demanding environments.
6. Low Gate Charge: Offers reduced drive power for lower heat generation in the gate drive circuit.
These features make the FDS6930B ideal for consumer electronics, automotive systems, and other electronic devices requiring efficient power switching.
Package
The FDS6930B is typically packaged in a TO-220 format, which is a metal-can package that provides good thermal performance and is suitable for power applications.
Pinout
The FDS6930B is a dual N-channel MOSFET in a SO-8 package, featuring a total of 8 pins. The pin configuration is as follows:
1. Gate1 (G1) - Controls the first N-channel MOSFET.
2. Drain1 (D1) - Drain terminal for the first N-channel MOSFET.
3. Source1 (S1) - Source terminal for the first N-channel MOSFET.
4. Source2 (S2) - Source terminal for the second N-channel MOSFET.
5. Drain2 (D2) - Drain terminal for the second N-channel MOSFET.
6. Gate2 (G2) - Controls the second N-channel MOSFET.
7. Drain1 (D1) - Duplicate pin for the first MOSFET's Drain.
8. Source2 (S2) - Duplicate pin for the second MOSFET's Source.
The FDS6930B is commonly used in applications such as power management, electronic switching, and load driving due to its fast switching speeds and low on-resistance.
1. Gate1 (G1) - Controls the first N-channel MOSFET.
2. Drain1 (D1) - Drain terminal for the first N-channel MOSFET.
3. Source1 (S1) - Source terminal for the first N-channel MOSFET.
4. Source2 (S2) - Source terminal for the second N-channel MOSFET.
5. Drain2 (D2) - Drain terminal for the second N-channel MOSFET.
6. Gate2 (G2) - Controls the second N-channel MOSFET.
7. Drain1 (D1) - Duplicate pin for the first MOSFET's Drain.
8. Source2 (S2) - Duplicate pin for the second MOSFET's Source.
The FDS6930B is commonly used in applications such as power management, electronic switching, and load driving due to its fast switching speeds and low on-resistance.
Manufacturer
The FDS6930B is manufactured by FDD Semiconductor, a company that specializes in designing and producing high-performance MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and other related semiconductor devices. FDD is known for its innovations in power management solutions, catering to various applications including consumer electronics, industrial equipment, and automotive systems. The company focuses on providing efficient and reliable semiconductor products that enhance energy efficiency and performance in electronic devices.
Application
The FDS6930B is a dual N-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, synchronous rectification, motor control, power supplies, and battery management systems. Its low on-resistance and fast switching capabilities make it suitable for efficient power conversion and thermal management in consumer electronics, automotive applications, and industrial systems.
Equivalent
Equivalent products to the FDS6930B chip include the FDS6930, FDS6940, and FDS6910. These components are typically N-channel MOSFETs with similar specifications for voltage, current, and on-resistance. Always check detailed datasheets for specific parameters to ensure suitability for your application.
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