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FDS6898AZ
MOSFET 2N-CH 20V 9.4A 8SOIC
- 製造商
- 製造商。 部分 #FDS6898AZ
- 包 8-SOIC (0.154, 3.90mm Width)
- 資料表 FDS6898AZ DataSheet
- 有現貨的9383
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規格
| Supplier | onsemi,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 9.4A |
| RdsOn(Max)@IdVgs | 14mOhm @ 9.4A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 23nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 1821pF @ 10V |
| Power-Max | 900mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概述
Description
FDS6898AZ is a dual N-channel enhancement-mode MOSFET device from On Semiconductor (Fairchild). It contains two independent N‑channel MOSFETs in a single compact package, designed as low‑voltage power switches. Each FET can act as a low‑side switch or be used in simple dual/half-bridge configurations for DC‑DC converters, motor control, load switching, and other power-management functions. The part is chosen for low on-resistance and efficient switching in portable electronics, with ratings defined in its datasheet (Vds, Id, Rds(on), Vgs(th), Qg, thermal limits, and pinout). For exact electrical specs and packaging details, consult the FDS6898AZ datasheet. If you’d like, I can fetch or summarize the precise ratings.
Features
FDS6898AZ is a small N-channel MOSFET. Key features (typical; confirm exact values in datasheet):
- Type: N-channel enhancement-mode MOSFET
- VDS: 30 V
- RDS(on): very low (roughly 9–13 mΩ max)
- ID: around 7–8 A continuous
- Gate: logic-level capable (VGS ≈ 4.5 V drive; VGS(th) ~ 0.7–1.5 V)
- Package: SOT-23 (AZ suffix denotes RoHS-compliant)
- Gate charge: low, suitable for fast switching
- Body diode: intrinsic diode for reverse current protection
- Avalanche rugged / robust switching characteristics
- Applications: DC-DC converters, load switching, power management
Note: exact electrical specs (max ratings, RDS(on), ID, etc.) should be verified in the official datasheet for this part.
- Type: N-channel enhancement-mode MOSFET
- VDS: 30 V
- RDS(on): very low (roughly 9–13 mΩ max)
- ID: around 7–8 A continuous
- Gate: logic-level capable (VGS ≈ 4.5 V drive; VGS(th) ~ 0.7–1.5 V)
- Package: SOT-23 (AZ suffix denotes RoHS-compliant)
- Gate charge: low, suitable for fast switching
- Body diode: intrinsic diode for reverse current protection
- Avalanche rugged / robust switching characteristics
- Applications: DC-DC converters, load switching, power management
Note: exact electrical specs (max ratings, RDS(on), ID, etc.) should be verified in the official datasheet for this part.
Package
SC-70-6 (6-pin) surface-mount package (also referred to as SOT-23‑6).
Pinout
- Pin count: 6 pins (SOT-23-6)
- Function: Dual N-channel enhancement-mode MOSFET in one package (two N‑MOSFET switches for power management/DC-DC applications).
- Function: Dual N-channel enhancement-mode MOSFET in one package (two N‑MOSFET switches for power management/DC-DC applications).
Manufacturer
- Manufacturer: ON Semiconductor (ON Semiconductor Corp.), the company that now carries the Fairchild product line for FDS6898AZ.
- What kind of company: A multinational American semiconductor designer and manufacturer that produces energy‑efficient electronic components (power management, analog, sensors, discretes, etc.), publicly traded (NASDAQ: ON).
- What kind of company: A multinational American semiconductor designer and manufacturer that produces energy‑efficient electronic components (power management, analog, sensors, discretes, etc.), publicly traded (NASDAQ: ON).
Application
FDS6898AZ is a dual N-channel enhancement MOSFET. Common application areas: power switching in portable electronics (DC–DC converters, buck/boost regulators), load-switching and reverse-current protection, motor/actuator control, battery charging/discharging circuits, and LED driver power stages.
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