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FDS6690AS
MOSFET N-CH 30V 10A 8SOIC
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規格
| Series | PowerTrench®, SyncFET™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | FDS6690 |
概述
Description
FDS6690AS is a high-performance, N-channel MOSFET designed for various applications, including power management and switching in automotive and industrial systems. It features low on-resistance (Rds(on)), enabling efficient current handling and reduced heat generation. The device typically operates in high-frequency environments, making it suitable for use in DC-DC converters, power supplies, and motor control circuits.
The FDS6690AS is housed in a compact package, which aids in space-saving designs. Key specifications often include a maximum drain-source voltage (Vds) of around 30V and a continuous current rating of several tens of amperes, depending on the thermal conditions. Its fast switching capability enhances performance in pulse applications, contributing to overall system efficiency.
For optimal performance and reliability, the FDS6690AS is designed with robust thermal characteristics, making it accessible for a variety of demanding applications. Always refer to the manufacturer's datasheet for detailed specifications and recommended operating conditions.
The FDS6690AS is housed in a compact package, which aids in space-saving designs. Key specifications often include a maximum drain-source voltage (Vds) of around 30V and a continuous current rating of several tens of amperes, depending on the thermal conditions. Its fast switching capability enhances performance in pulse applications, contributing to overall system efficiency.
For optimal performance and reliability, the FDS6690AS is designed with robust thermal characteristics, making it accessible for a variety of demanding applications. Always refer to the manufacturer's datasheet for detailed specifications and recommended operating conditions.
Features
The FDS6690AS is a dual N-channel MOSFET designed for various power applications. Key features include:
1. Low RDS(on): It offers a low on-resistance, ensuring efficient power delivery and minimal heat generation.
2. High Voltage Rating: Suitable for applications requiring high voltage handling, typically up to 30V.
3. Fast Switching Speed: Enables rapid switching for improved performance in high-frequency applications.
4. Compact Package: Usually available in a small surface-mount package, ideal for space-constrained designs.
5. Thermal Performance: Good thermal characteristics allow for reliable operation under high load conditions.
6. Gate Threshold Voltage: Operates effectively over a wide range of gate voltages, accommodating different drive circuits.
These features make the FDS6690AS suitable for use in power management, motor control, and other demanding electronic applications.
1. Low RDS(on): It offers a low on-resistance, ensuring efficient power delivery and minimal heat generation.
2. High Voltage Rating: Suitable for applications requiring high voltage handling, typically up to 30V.
3. Fast Switching Speed: Enables rapid switching for improved performance in high-frequency applications.
4. Compact Package: Usually available in a small surface-mount package, ideal for space-constrained designs.
5. Thermal Performance: Good thermal characteristics allow for reliable operation under high load conditions.
6. Gate Threshold Voltage: Operates effectively over a wide range of gate voltages, accommodating different drive circuits.
These features make the FDS6690AS suitable for use in power management, motor control, and other demanding electronic applications.
Package
The FDS6690AS is available in a TO-220 package type. This package provides a robust and thermally efficient design suitable for power management applications.
Pinout
The FDS6690AS is a dual N-channel MOSFET commonly used in power management applications. It comes in a SO-8 package, which features a pin count of 8.
The pin functions are as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Connects to the drain of the first N-channel MOSFET.
3. Source 1 (S1) - Connects to the source of the first N-channel MOSFET.
4. Source 2 (S2) - Connects to the source of the second N-channel MOSFET.
5. Drain 2 (D2) - Connects to the drain of the second N-channel MOSFET.
6. Gate 2 (G2) - Controls the second N-channel MOSFET.
7. Drain and Source Common (D/S) - This pin may serve as a common connection for the drains and sources in certain configurations.
8. NC (No Connect) - Not connected internally; typically left floating.
The FDS6690AS is designed for applications such as power switching and load management.
The pin functions are as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Connects to the drain of the first N-channel MOSFET.
3. Source 1 (S1) - Connects to the source of the first N-channel MOSFET.
4. Source 2 (S2) - Connects to the source of the second N-channel MOSFET.
5. Drain 2 (D2) - Connects to the drain of the second N-channel MOSFET.
6. Gate 2 (G2) - Controls the second N-channel MOSFET.
7. Drain and Source Common (D/S) - This pin may serve as a common connection for the drains and sources in certain configurations.
8. NC (No Connect) - Not connected internally; typically left floating.
The FDS6690AS is designed for applications such as power switching and load management.
Manufacturer
The FDS6690AS is manufactured by Fairchild Semiconductor, which is a well-known company in the semiconductor industry. Fairchild specializes in designing and manufacturing a wide range of semiconductor products, including power management devices, analog ICs, and discrete components. Founded in 1957, the company has played a significant role in the development of various technologies, particularly in the areas of power efficiency and signal processing. In 2016, Fairchild Semiconductor was acquired by ON Semiconductor, further expanding its portfolio and capabilities in the semiconductor market. Today, ON Semiconductor continues to support the FDS6690AS and other Fairchild products, focusing on providing innovative solutions for diverse applications such as automotive, industrial, and consumer electronics.
Application
The FDS6690AS is a dual N-channel MOSFET primarily used in applications such as power management, load switching, and DC-DC converters. It is suitable for use in battery management systems, power supplies, and motor control circuits. Its low on-resistance and fast switching characteristics make it ideal for high-efficiency designs in consumer electronics, automotive systems, and industrial equipment.
Equivalent
The FDS6690AS is a N-channel MOSFET, and its equivalent products include the following:
1. AOD6C63 (AOS)
2. IRF3205 (Infineon)
3. FDS6670 (Fairchild)
4. BSS138 (NXP)
Always verify specifications such as voltage, current, and RDS(on) before substitution.
1. AOD6C63 (AOS)
2. IRF3205 (Infineon)
3. FDS6670 (Fairchild)
4. BSS138 (NXP)
Always verify specifications such as voltage, current, and RDS(on) before substitution.
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