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FDS3890
MOSFET 2N-CH 80V 4.7A 8-SO
- 製造商
- 製造商。 部分 #FDS3890
- 包 8-SOIC (0.154, 3.90mm Width)
- 資料表 FDS3890 DataSheet
- 有現貨的8795
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規格
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 80V |
| Current-ContinuousDrain(Id)@25°C | 4.7A |
| RdsOn(Max)@IdVgs | 44mOhm @ 4.7A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 35nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 1180pF @ 40V |
| Power-Max | 900mW |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概述
Description
FDS3890, often referred to in the context of food and nutrition studies, is a course typically focused on advanced topics in food science and dietetics. It may cover areas such as food safety, nutrition policy, food technology, and the relationship between diet and health. The course aims to equip students with the knowledge and skills necessary to critically analyze food-related issues, understand current research, and apply best practices in various professional settings. Students may engage in practical experiences, case studies, and discussions that highlight the importance of evidence-based approaches in food science and nutrition. Overall, FDS3890 serves as a bridge between theoretical concepts and real-world applications, preparing students for careers in nutrition, food safety, or food industry management.
Features
The FDS3890 is a high-performance N-channel MOSFET designed for power management applications. Key features include:
1. Low RDS(on): Provides efficient operation and reduced power loss in switching applications.
2. High Current Rating: Capable of handling significant load currents, making it suitable for various power applications.
3. Fast Switching Speed: Enables rapid turn-on and turn-off, improving overall efficiency in power conversion.
4. Thermal Management: Designed with a low thermal resistance, enhancing heat dissipation and reliability.
5. Wide Voltage Range: Operates effectively across a broad range of voltages, increasing versatility in application.
6. Compact Package: Available in a surface-mount package, facilitating easier integration into modern electronic designs.
7. Ruggedness: Offers high avalanche ratings and robustness against transient conditions.
These features make the FDS3890 ideal for use in power supplies, motor drives, and other high-efficiency applications.
1. Low RDS(on): Provides efficient operation and reduced power loss in switching applications.
2. High Current Rating: Capable of handling significant load currents, making it suitable for various power applications.
3. Fast Switching Speed: Enables rapid turn-on and turn-off, improving overall efficiency in power conversion.
4. Thermal Management: Designed with a low thermal resistance, enhancing heat dissipation and reliability.
5. Wide Voltage Range: Operates effectively across a broad range of voltages, increasing versatility in application.
6. Compact Package: Available in a surface-mount package, facilitating easier integration into modern electronic designs.
7. Ruggedness: Offers high avalanche ratings and robustness against transient conditions.
These features make the FDS3890 ideal for use in power supplies, motor drives, and other high-efficiency applications.
Package
The FDS3890 is typically available in a surface-mounted package type, specifically the SO-8 (Small Outline 8-lead) package. This compact design is suitable for various applications, providing efficient thermal performance and space-saving qualities in electronic circuits.
Pinout
The FDS3890 is a dual N-channel MOSFET with a total of 8 pins. Its pin configuration and functions are as follows:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): Source terminal for the first N-channel MOSFET.
3. Drain 1 (D1): Drain terminal for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): Source terminal for the second N-channel MOSFET.
6. Drain 2 (D2): Drain terminal for the second N-channel MOSFET.
7. NC (No Connection): Typically unused pin.
8. GND (Ground): Common reference point for the device.
This device is commonly used in power management applications, including DC-DC converters and load switching due to its low on-resistance and fast switching capabilities.
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): Source terminal for the first N-channel MOSFET.
3. Drain 1 (D1): Drain terminal for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): Source terminal for the second N-channel MOSFET.
6. Drain 2 (D2): Drain terminal for the second N-channel MOSFET.
7. NC (No Connection): Typically unused pin.
8. GND (Ground): Common reference point for the device.
This device is commonly used in power management applications, including DC-DC converters and load switching due to its low on-resistance and fast switching capabilities.
Manufacturer
The FDS3890 is manufactured by Fairchild Semiconductor, which is a company specializing in the production of semiconductor solutions. Founded in 1957, Fairchild Semiconductor is known for its innovation in the field of integrated circuits and discrete semiconductor devices, serving various industries, including automotive, industrial, and consumer electronics. The company focuses on developing high-performance components, such as MOSFETs, diodes, and power management ICs, aimed at enhancing energy efficiency and performance in electronic applications. Fairchild Semiconductor has a strong emphasis on research and development to meet the evolving needs of the technology market.
Application
FDS3890 is primarily used in the fields of biochemistry and molecular biology, particularly for applications involving enzyme assays, protein purification, and cellular analysis. It serves as a reagent for studying enzyme kinetics, metabolic pathways, and cellular interactions. Additionally, it can be utilized in drug discovery and development processes, particularly for screening compounds and assessing biological activity.
Equivalent
Equivalent products to the FDS3890 chip include the NXP's BS170, Infineon's BSS138, and the Vishay's Si2302. These MOSFETs share similar specifications in terms of voltage rating, current capacity, and gate threshold voltage, making them suitable alternatives in various applications. Always verify the specific parameters to ensure compatibility for your circuit design.
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