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FDP150N10
MOSFET N-CH 100V 57A TO220-3
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規格
| Supplier | onsemi |
| Package | Tube |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 57A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 15mOhm @ 49A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 69 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4760 pF @ 25 V |
| PowerDissipation(Max) | 110W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220-3 |
概述
Description
FDP150N10 is a high‑current N‑channel power MOSFET (from the FDP/Fairchild line, now part of On Semiconductor). It’s designed for switching power electronics and motor-drive applications.
Key points
- Voltage/current: VDS around 100 V, continuous drain current about 150 A.
- Conduction: low RDS(on) to reduce conduction losses (exact value in the datasheet).
- Switching: fast switching capability with rugged avalanche/ SOA characteristics.
- Gate drive: typically best driven with a gate voltage up to ~10 V (check datasheet for precise VGS requirements).
- Protection: body diode and built-in ruggedness suitable for switching converters, motor drivers, and inverters.
Common uses
- DC‑DC power supplies and high‑power buck/boost converters
- Motor control and drives
- Power inverters and similar high‑current switching applications
Notes
- Always verify exact electrical specs (RDS(on), VGS, Qg, thermal limits) in the FDP150N10 datasheet for your part version and package.
- Ensure proper heatsinking and gate drive Strategy to meet your switching frequency and temperature targets.
Key points
- Voltage/current: VDS around 100 V, continuous drain current about 150 A.
- Conduction: low RDS(on) to reduce conduction losses (exact value in the datasheet).
- Switching: fast switching capability with rugged avalanche/ SOA characteristics.
- Gate drive: typically best driven with a gate voltage up to ~10 V (check datasheet for precise VGS requirements).
- Protection: body diode and built-in ruggedness suitable for switching converters, motor drivers, and inverters.
Common uses
- DC‑DC power supplies and high‑power buck/boost converters
- Motor control and drives
- Power inverters and similar high‑current switching applications
Notes
- Always verify exact electrical specs (RDS(on), VGS, Qg, thermal limits) in the FDP150N10 datasheet for your part version and package.
- Ensure proper heatsinking and gate drive Strategy to meet your switching frequency and temperature targets.
Features
FDP150N10 is a power N-channel MOSFET. Typical features include:
- N-channel enhancement-mode device
- Voltage rating: 150 V
- Continuous drain current: ~10 A
- Low on-resistance for improved efficiency
- Fast switching with low gate charge
- Avalanche/inductive-load ruggedness
- Suitable for switch-mode power supplies, DC-DC converters, and motor drives
- Available in common power packages (e.g., TO-220, D²PAK) with good thermal performance
- RoHS-compliant and suitable for heatsinking with a tab
Note: exact electrical figures (Rds(on), package options) should be confirmed from the specific datasheet for your exact device variant.
- N-channel enhancement-mode device
- Voltage rating: 150 V
- Continuous drain current: ~10 A
- Low on-resistance for improved efficiency
- Fast switching with low gate charge
- Avalanche/inductive-load ruggedness
- Suitable for switch-mode power supplies, DC-DC converters, and motor drives
- Available in common power packages (e.g., TO-220, D²PAK) with good thermal performance
- RoHS-compliant and suitable for heatsinking with a tab
Note: exact electrical figures (Rds(on), package options) should be confirmed from the specific datasheet for your exact device variant.
Package
FDP150N10 is a power MOSFET commonly offered in large power packages — typically TO‑247 (through‑hole) or D2PAK/TO‑263 (surface‑mount) depending on the manufacturer. Confirm the exact package on the device’s datasheet or ordering code.
Pinout
FDP150N10 is an N‑channel power MOSFET with 3 external pins (plus a metal tab/heatsink that is electrically the drain). Pin functions:
- Pin 1: Gate — voltage input that turns the channel on/off.
- Pin 2: Drain — main current input (also connected to the tab).
- Pin 3: Source — main current output/return (reference for gate).
- Pin 1: Gate — voltage input that turns the channel on/off.
- Pin 2: Drain — main current input (also connected to the tab).
- Pin 3: Source — main current output/return (reference for gate).
Manufacturer
The FDP150N10 is manufactured by ON Semiconductor (originally marketed by Fairchild Semiconductor). ON Semiconductor is a global semiconductor company that designs and manufactures power-management and analog integrated circuits, discrete semiconductors (including MOSFETs), sensors and related components for automotive, industrial, consumer and communications markets.
Application
FDP150N10 is an N-channel enhancement-mode MOSFET (≈150 V). Common applications include:
- Primary-side switches in offline SMPS/adapters (flyback, buck-boost)
- DC-DC converters in telecom/servers
- Motor control (BLDC and brushed DC) in industrial/automotive
- Solar inverters and battery energy-storage power electronics
- General high-side/low-side switching and load-switching in power-management circuits (isolated or non-isolated topologies)
- Primary-side switches in offline SMPS/adapters (flyback, buck-boost)
- DC-DC converters in telecom/servers
- Motor control (BLDC and brushed DC) in industrial/automotive
- Solar inverters and battery energy-storage power electronics
- General high-side/low-side switching and load-switching in power-management circuits (isolated or non-isolated topologies)
Equivalent
Do you mean the Fairchild/ON Semiconductor FDP150N10 N‑channel MOSFET? Which parameter(s) matter most (VDS, RDS(on), package, current, switching speed)? I can then list direct equivalents from other manufacturers.
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