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FDP036N10A
MOSFET N-CH 100V 120A TO220
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概述
Description
FDP036N10A is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power applications. It features a low on-resistance (RDS(on)) of 36 milliohms, allowing for efficient switching and minimal power loss. With a voltage rating of 100V and a continuous drain current of up to 36A, it is suitable for various uses, including power supplies, motor drivers, and DC-DC converters.
The device's fast switching speed makes it ideal for high-frequency applications. Additionally, it has a robust package design, typically offered in a TO-220 or similar format, allowing for effective heat dissipation. The FDP036N10A also boasts low gate charge, which contributes to faster switching times and lower drive power requirements.
Due to these characteristics, it is commonly used in applications where efficiency and reliability are critical. Always consult the datasheet for specific electrical characteristics, thermal performance, and application guidelines when integrating this MOSFET into your designs.
The device's fast switching speed makes it ideal for high-frequency applications. Additionally, it has a robust package design, typically offered in a TO-220 or similar format, allowing for effective heat dissipation. The FDP036N10A also boasts low gate charge, which contributes to faster switching times and lower drive power requirements.
Due to these characteristics, it is commonly used in applications where efficiency and reliability are critical. Always consult the datasheet for specific electrical characteristics, thermal performance, and application guidelines when integrating this MOSFET into your designs.
Features
The FDP036N10A is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: Continuous drain current (I_D) of 36A at a case temperature of 25°C.
3. R_DS(on): Low on-resistance of approximately 0.036 Ohm, ensuring minimal power loss.
4. Gate Threshold Voltage: Gate-source voltage (V_GS) threshold typically ranges from 2V to 4V, enabling efficient switching.
5. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Fast Switching: High-speed switching capabilities suitable for various applications, including power supplies and motor drives.
7. Thermal Performance: Low thermal resistance, enhancing reliability under load.
This MOSFET is suitable for use in DC-DC converters, inverters, and other applications requiring robust performance and efficiency.
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: Continuous drain current (I_D) of 36A at a case temperature of 25°C.
3. R_DS(on): Low on-resistance of approximately 0.036 Ohm, ensuring minimal power loss.
4. Gate Threshold Voltage: Gate-source voltage (V_GS) threshold typically ranges from 2V to 4V, enabling efficient switching.
5. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Fast Switching: High-speed switching capabilities suitable for various applications, including power supplies and motor drives.
7. Thermal Performance: Low thermal resistance, enhancing reliability under load.
This MOSFET is suitable for use in DC-DC converters, inverters, and other applications requiring robust performance and efficiency.
Package
The FDP036N10A is packaged in a TO-220 format. This package type is typically used for power MOSFETs, offering good thermal performance and heat dissipation capabilities.
Pinout
The FDP036N10A is an N-channel MOSFET with a total of 5 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET's switching. Applying a positive voltage to this pin allows current to flow between the Drain and Source.
2. Drain (D) - The Drain pin is where the load connects, and it is the output side of the MOSFET.
3. Source (S) - The Source pin is the input side where the current enters the MOSFET from the load.
The additional two pins are typically the Body or Bulk connection, which may be internally connected to the Source in many designs.
The FDP036N10A is designed for high-speed switching applications, capable of handling a maximum drain current of 36A and supporting a drain-source voltage of up to 100V. It's often used in power management, switching power supplies, and motor control applications.
1. Gate (G) - This pin is used to control the MOSFET's switching. Applying a positive voltage to this pin allows current to flow between the Drain and Source.
2. Drain (D) - The Drain pin is where the load connects, and it is the output side of the MOSFET.
3. Source (S) - The Source pin is the input side where the current enters the MOSFET from the load.
The additional two pins are typically the Body or Bulk connection, which may be internally connected to the Source in many designs.
The FDP036N10A is designed for high-speed switching applications, capable of handling a maximum drain current of 36A and supporting a drain-source voltage of up to 100V. It's often used in power management, switching power supplies, and motor control applications.
Manufacturer
The FDP036N10A is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was known for producing a wide range of semiconductor products, including transistors, diodes, and integrated circuits. The company specialized in power management solutions, analog devices, and various electronic components used in consumer electronics, automotive, industrial, and communications applications. As a significant player in the semiconductor industry, Fairchild was recognized for its innovations and contributions to the development of power semiconductor technology before its acquisition by ON Semiconductor in 2016.
Application
The FDP036N10A is an N-channel MOSFET commonly used in power electronics applications, including DC-DC converters, motor drivers, and power management circuits. Its low on-resistance and high-speed switching capabilities make it suitable for applications requiring efficient power handling, such as in renewable energy systems, electric vehicles, and industrial automation. It can also be used in audio amplifiers and high-frequency switching applications.
Equivalent
The FDP036N10A is a N-channel MOSFET with a 100V rating and 36A continuous current. Equivalent products include the IRF320N, STP36NF10, and AOD5N60. Always verify specifications like RDS(on) and package type before substitution.
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