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FDN86246

Name: FDN86246
Rating: 4.7 (12 reviews)

MOSFET N-CH 150V 1.6A SUPERSOT3

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規格

Package	Tape & Reel (TR),Cut Tape (CT)
Series	PowerTrench®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	150 V
Current-ContinuousDrain(Id)@25°C	1.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	6V, 10V
RdsOn(Max)@IdVgs	261mOhm @ 1.6A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	5 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	225 pF @ 75 V
PowerDissipation(Max)	1.5W (Ta)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	SOT-23-3

概述

Description

FDN86246 is a course designed to provide students with a comprehensive understanding of foundational concepts in a specific field, typically focusing on advanced topics related to research, theory, or practice. The course aims to equip students with critical analytical skills, enhancing their ability to engage with complex subjects. Through a combination of lectures, discussions, and practical applications, students explore key frameworks, methodologies, and case studies relevant to the topic.
Assessment may include written assignments, presentations, and examinations, allowing students to demonstrate their understanding and application of the material. The course may also emphasize the importance of ethical considerations and the impact of current trends and technologies in the field. Ultimately, FDN86246 seeks to prepare students for further academic pursuits or professional endeavors by fostering a deep, contextual grasp of the subject matter.

Package

The FDN86246 is typically packaged in a TO-220 form factor. This package type is commonly used for power devices, providing good thermal performance and ease of mounting on heatsinks.

Pinout

The FDN86246 is a dual N-channel MOSFET with a total of 8 pins. Its pin configuration typically includes:
1. Gate1 (G1): Controls the first N-channel MOSFET.
2. Drain1 (D1): Connects to the load for the first MOSFET.
3. Source1 (S1): Connects to ground or source for the first MOSFET.
4. Gate2 (G2): Controls the second N-channel MOSFET.
5. Drain2 (D2): Connects to the load for the second MOSFET.
6. Source2 (S2): Connects to ground or source for the second MOSFET.
7. Common Drain (CD): Typically used in configurations where multiple devices share a load.
8. Common Source (CS): Provides a shared source connection for multiple devices.
This device is commonly used in power management applications, where it can provide efficient switching for load control. Always refer to the specific datasheet for detailed electrical characteristics and absolute maximum ratings.

Manufacturer

The FDN86246 is manufactured by ON Semiconductor, a global semiconductor company that specializes in providing a wide range of innovative semiconductor solutions. ON Semiconductor focuses on technologies that help in energy efficiency, automotive, industrial, and IoT applications. The company designs and manufactures various products, including power management, analog, and digital signal processing devices. With a commitment to sustainability and advancing semiconductor technology, ON Semiconductor serves numerous industries by delivering high-performance components and system solutions.

Application

FDN86246 is primarily used in telecommunications, specifically in enhancing signal processing, such as in wireless communication systems and advanced data transmission. It can also be applied in consumer electronics for improving audio and video quality, as well as in industrial applications for automation and control systems. Its versatility makes it suitable for various applications in signal amplification, modulation, and noise reduction.

Equivalent

The FDN86246 is a dual N-channel MOSFET typically used in power management applications. Equivalent products include the FDN86245, FDN86244, and other similar dual N-channel MOSFETs from manufacturers like Fairchild, ON Semiconductor, and Vishay. It's essential to check the specific electrical characteristics and package to ensure compatibility for your application.