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FDN5630
MOSFET N-CH 60V 1.7A SUPERSOT3
- 製造商
- 製造商。 部分 #FDN5630
- 包 SSOT-3
- 資料表
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規格
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 1.7A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 100mOhm @ 1.7A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 10 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 400 pF @ 15 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 |
概述
Description
FDN5630 is a graduate-level course that focuses on foundational concepts in the field of food and nutrition. This course typically covers the principles of nutrition science, dietary assessments, and the role of nutrition in health and disease. Students will explore topics such as macronutrients, micronutrients, dietary guidelines, and the impact of nutrition on various health conditions.
The course emphasizes critical thinking and application of nutritional knowledge in real-world scenarios. Students may engage in case studies, practical assessments, and discussions on current research in the field. By the end of FDN5630, participants are expected to have a comprehensive understanding of nutrition’s role in health promotion and disease prevention, equipping them with the skills to make informed dietary recommendations.
The course emphasizes critical thinking and application of nutritional knowledge in real-world scenarios. Students may engage in case studies, practical assessments, and discussions on current research in the field. By the end of FDN5630, participants are expected to have a comprehensive understanding of nutrition’s role in health promotion and disease prevention, equipping them with the skills to make informed dietary recommendations.
Features
The FDN5630 is a versatile, high-performance N-channel MOSFET known for its efficiency and reliability in various applications. Key features include:
1. Voltage Rating: It typically supports a high drain-source voltage, making it suitable for power applications.
2. Current Handling: Capable of handling substantial drain current, ideal for high-power circuits.
3. Low R_DS(on): This parameter indicates low on-resistance, reducing power loss and improving thermal performance.
4. Fast Switching Speed: Enables rapid switching, which is crucial for applications like DC-DC converters and motor drives.
5. Thermal Stability: Designed to operate effectively across a broad temperature range, enhancing durability.
6. Package Options: Available in various package types to suit different layout requirements.
7. Gate Threshold Voltage: Optimized for compatibility with logic-level control signals.
These features make the FDN5630 suitable for use in power management, switching applications, and other electronic devices requiring efficient power handling.
1. Voltage Rating: It typically supports a high drain-source voltage, making it suitable for power applications.
2. Current Handling: Capable of handling substantial drain current, ideal for high-power circuits.
3. Low R_DS(on): This parameter indicates low on-resistance, reducing power loss and improving thermal performance.
4. Fast Switching Speed: Enables rapid switching, which is crucial for applications like DC-DC converters and motor drives.
5. Thermal Stability: Designed to operate effectively across a broad temperature range, enhancing durability.
6. Package Options: Available in various package types to suit different layout requirements.
7. Gate Threshold Voltage: Optimized for compatibility with logic-level control signals.
These features make the FDN5630 suitable for use in power management, switching applications, and other electronic devices requiring efficient power handling.
Package
The FDN5630 is typically available in a SOT-23 package type. This surface-mount package is compact and commonly used for low-power applications, providing efficient thermal performance and space-saving benefits.
Pinout
The FDN5630 is a N-channel MOSFET, typically used in power management applications. It comes in a 8-pin package (commonly in SO-8 or similar configurations).
The pin configuration generally includes:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - Connected to the load and carries the output current.
3. Source (S) - Connected to ground in common-source configurations.
4. Body Diode - Internal diode between Drain and Source, allowing current flow in reverse.
Additional pins may be for thermal or additional control functions depending on the specific package. Always refer to the manufacturer's datasheet for precise details and pin assignments for specific applications.
The pin configuration generally includes:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - Connected to the load and carries the output current.
3. Source (S) - Connected to ground in common-source configurations.
4. Body Diode - Internal diode between Drain and Source, allowing current flow in reverse.
Additional pins may be for thermal or additional control functions depending on the specific package. Always refer to the manufacturer's datasheet for precise details and pin assignments for specific applications.
Manufacturer
The FDN5630 is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in various technologies, including analog, digital, and mixed-signal integrated circuits, as well as discrete components. The company focuses on providing energy-efficient innovations and is involved in markets such as automotive, industrial, cloud computing, and consumer electronics. ON Semiconductor aims to deliver high-performance products that enable a sustainable and connected world.
Equivalent
The FDN5630 chip is a dual N-channel MOSFET used in various applications, particularly in power management. Equivalent products include the Si4730, BSS138, and 2N7000 series. Other alternatives may include the BS170 and various other MOSFETs with similar specifications in terms of voltage, current rating, and package type. Always check the datasheet for specific electrical characteristics to ensure compatibility in your application.
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