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FDN304PZ
MOSFET P-CH 20V 2.4A SUPERSOT3
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- 製造商。 部分 #FDN304PZ
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- 資料表 FDN304PZ DataSheet
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規格
| Supplier | onsemi,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 2.4A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 52mOhm @ 2.4A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 20 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 1310 pF @ 10 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 |
概述
Description
FDN304PZ is a small-signal P-channel enhancement-mode MOSFET used for high-side switching in low-voltage, surface-mount circuits. It’s part of the FDN family (Fairchild/ON Semiconductor) and is typically found in a compact SMD package.
Key points:
- Type: P-channel MOSFET (enhancement mode)
- Packaging: common SMD package (e.g., SOT-23/Similar)
- Typical use: high-side switching, load control, reverse-polarity protection in battery-powered/applications
- Basic operation: turns on when Vgs is sufficiently negative relative to source; turns off as gate approaches source voltage
- Important specs to check: Vds (max), Id (continuous current), Rds(on) at your gate drive, Vgs(th), and package/pinout
For exact electrical values and pinout, consult the FDN304PZ datasheet. If you share your target voltage/current, I can highlight the relevant specs.
Key points:
- Type: P-channel MOSFET (enhancement mode)
- Packaging: common SMD package (e.g., SOT-23/Similar)
- Typical use: high-side switching, load control, reverse-polarity protection in battery-powered/applications
- Basic operation: turns on when Vgs is sufficiently negative relative to source; turns off as gate approaches source voltage
- Important specs to check: Vds (max), Id (continuous current), Rds(on) at your gate drive, Vgs(th), and package/pinout
For exact electrical values and pinout, consult the FDN304PZ datasheet. If you share your target voltage/current, I can highlight the relevant specs.
Features
FDN304PZ is a P-channel enhancement-mode MOSFET. Key features:
- P-channel MOSFET, enhancement mode
- SOT-23 3-pin package
- Suitable for high-side switching and load protection
- Logic‑level gate drive (driven by low gate voltage)
- Low on-resistance and fast switching (quality for efficient switching)
- RoHS compliant
- General purpose rating for common rails (voltage/current specs in datasheet) with protection for reverse polarity via body diode
Note: For exact Vds, Id, and Rds(on) values, refer to the official datasheet.
- P-channel MOSFET, enhancement mode
- SOT-23 3-pin package
- Suitable for high-side switching and load protection
- Logic‑level gate drive (driven by low gate voltage)
- Low on-resistance and fast switching (quality for efficient switching)
- RoHS compliant
- General purpose rating for common rails (voltage/current specs in datasheet) with protection for reverse polarity via body diode
Note: For exact Vds, Id, and Rds(on) values, refer to the official datasheet.
Package
SOT-23 (SC-70-3) surface-mount package.
Pinout
FDN304PZ is a 3‑pin P‑channel enhancement MOSFET (SOT‑23). The three pins are Gate, Drain and Source. Functionally: the Gate voltage controls the channel; Source is the P‑channel source (typically connected to the positive rail in high‑side switch applications); Drain is the current output to the load. It is commonly used for high‑side switching, load switching and small‑signal power control.
Manufacturer
The FDN304PZ is manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Fairchild/ON is a semiconductor manufacturer that designs and produces discrete components and analog/power ICs (including MOSFETs, power-management and interface devices) for industrial, consumer and automotive markets.
Application
FDN304PZ is a P-channel enhancement-mode MOSFET. Common applications:
- High-side switching in DC-DC converters and PMICs
- Load switches and power-path control in battery-powered devices
- Reverse-polarity protection and simple protection circuits
- PWM switching for small loads (LEDs, relays, small motors)
- Ideal-diode/OR-ing circuits for power rails
(Use suited for low-to-moderate voltage, high-side applications requiring a P-channel device.)
- High-side switching in DC-DC converters and PMICs
- Load switches and power-path control in battery-powered devices
- Reverse-polarity protection and simple protection circuits
- PWM switching for small loads (LEDs, relays, small motors)
- Ideal-diode/OR-ing circuits for power rails
(Use suited for low-to-moderate voltage, high-side applications requiring a P-channel device.)
Equivalent
FDN304PZ is a P‑channel enhancement MOSFET. Common SOT‑23 cross refs include:
- IRLML6402 (20V, ~-3.6A)
- FDN306P (30V)
- BSS84 (50V, lower current; check Rds(on))
Note: verify Vds, Id, Vgs and Rds(on) and use a distributor cross-reference for exact matching.
- IRLML6402 (20V, ~-3.6A)
- FDN306P (30V)
- BSS84 (50V, lower current; check Rds(on))
Note: verify Vds, Id, Vgs and Rds(on) and use a distributor cross-reference for exact matching.
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