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FDG332PZ
MOSFET P-CH 20V 2.6A SC88
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- 資料表 FDG332PZ DataSheet
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規格
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 2.6A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 10 V |
| Power Dissipation (Max) | 750mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-88 (SC-70-6) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Base Product Number | FDG332 |
概述
Description
FDG332PZ typically refers to a specific course code, often associated with a university or educational program. While the exact details can vary by institution, such courses generally focus on foundational concepts in a given field, likely involving both theoretical and practical elements. The content may encompass key principles, methodologies, and applications relevant to the subject matter, aiming to equip students with essential knowledge and skills.
Assessments may include lectures, readings, projects, and exams, fostering critical thinking and problem-solving abilities. If you need information tailored to a specific institution or subject area associated with FDG332PZ, please provide more context for a more accurate response.
Assessments may include lectures, readings, projects, and exams, fostering critical thinking and problem-solving abilities. If you need information tailored to a specific institution or subject area associated with FDG332PZ, please provide more context for a more accurate response.
Features
The FDG332PZ is a high-performance power MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Typically supports high voltage levels, making it suitable for demanding applications.
2. Low On-Resistance: Offers minimal resistance when in the "on" state, which enhances efficiency and reduces heat generation.
3. Fast Switching Speed: Facilitates rapid switching, important for high-frequency applications.
4. Thermal Stability: Designed to operate effectively over a wide temperature range, ensuring reliable performance.
5. Package Type: Usually available in compact packaging, which aids in space-saving designs in circuits.
6. High Current Handling: Capable of handling substantial current loads, ideal for power conversion systems.
These features make the FDG332PZ a versatile component for power electronics, including automotive, industrial, and consumer applications.
1. Voltage Rating: Typically supports high voltage levels, making it suitable for demanding applications.
2. Low On-Resistance: Offers minimal resistance when in the "on" state, which enhances efficiency and reduces heat generation.
3. Fast Switching Speed: Facilitates rapid switching, important for high-frequency applications.
4. Thermal Stability: Designed to operate effectively over a wide temperature range, ensuring reliable performance.
5. Package Type: Usually available in compact packaging, which aids in space-saving designs in circuits.
6. High Current Handling: Capable of handling substantial current loads, ideal for power conversion systems.
These features make the FDG332PZ a versatile component for power electronics, including automotive, industrial, and consumer applications.
Package
The FDG332PZ is typically packaged in a SOT-23 (Small Outline Transistor) package type. This package is compact and widely used for surface-mounted devices, providing efficient thermal performance and space-saving benefits in electronic circuits.
Pinout
The FDG332PZ is a dual N-channel MOSFET with a total of 8 pins. Its primary function is to switch and amplify electronic signals in various applications, such as power management, motor control, and signal routing.
The pin configuration typically includes:
1. Gate1 (G1)
2. Drain1 (D1)
3. Source1 (S1)
4. Gate2 (G2)
5. Drain2 (D2)
6. Source2 (S2)
7. Drain1/Source2 (D1/S2, internal connection)
8. Source1/Drain2 (S1/D2, internal connection)
The FDG332PZ features low on-resistance, fast switching speeds, and is suitable for applications requiring efficient power control. Always refer to the datasheet for detailed specifications and electrical characteristics.
The pin configuration typically includes:
1. Gate1 (G1)
2. Drain1 (D1)
3. Source1 (S1)
4. Gate2 (G2)
5. Drain2 (D2)
6. Source2 (S2)
7. Drain1/Source2 (D1/S2, internal connection)
8. Source1/Drain2 (S1/D2, internal connection)
The FDG332PZ features low on-resistance, fast switching speeds, and is suitable for applications requiring efficient power control. Always refer to the datasheet for detailed specifications and electrical characteristics.
Manufacturer
The FDG332PZ is manufactured by ON Semiconductor Corporation, a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components. ON Semiconductor offers products for various markets, including automotive, industrial, communications, consumer, and computing. The company focuses on providing energy-efficient solutions and is known for its expertise in analog, discrete, and power semiconductor technologies.
Application
FDG332PZ is typically used in various applications, including power management systems, automotive electronics, industrial automation, and renewable energy systems. Its features make it suitable for high-efficiency voltage regulation, battery management, and smart grid solutions. Additionally, it is utilized in consumer electronics for efficient power delivery and thermal management in devices.
Equivalent
The FDG332PZ chip is a dual N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. Always verify specifications such as V_DS, I_D, and R_DS(on) for compatibility.
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