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FDD86569-F085

Name: FDD86569-F085
Rating: 4.7 (12 reviews)

MOSFET N-CH 60V 90A DPAK

製造商
製造商。部分 #FDD86569-F085
包 DPAK-3 , TO-252-3
資料表
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規格

Package	Tape & Reel (TR),Cut Tape (CT)
Series	Automotive, AEC-Q101, PowerTrench®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	60 V
Current-ContinuousDrain(Id)@25°C	90A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	5.7mOhm @ 80A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	52 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	2520 pF @ 30 V
PowerDissipation(Max)	150W (Tj)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	TO-252AA

概述

Description

FDD86569-F085 refers to a specific model or identifier, possibly related to technology, products, or systems. Without additional context, it’s challenging to pinpoint its exact nature. It could be associated with a technical specification, a product code, or a part number in fields such as electronics, automotive, or manufacturing.
If you are looking for an introduction to a specific system or technology tied to this identifier, please provide additional details for more accurate information.

Features

The FDD86569-F085 is a versatile power amplifier designed for various RF applications, particularly in the frequency range of 800 MHz to 3 GHz. Key features typically include:
1. High Gain: Provides significant amplification of RF signals, enhancing performance in communication systems.
2. Efficiency: Optimized for power efficiency, reducing heat generation and extending operational lifespan.
3. Wide Bandwidth: Supports a broad frequency range, making it suitable for multiple applications, including LTE and other wireless systems.
4. Compact Design: Small form factor allows for easier integration into various devices.
5. Robust Performance: Engineered to withstand challenging environments with high reliability and durability.
6. Low Noise Figure: Minimizes signal distortion, ensuring clearer communication.
Overall, the FDD86569-F085 is ideal for applications requiring reliable and efficient RF amplification.

Package

The FDD86569-F085 is typically offered in a PowerFLAT package type, which is a low-profile, surface-mounted package designed for high-frequency applications. This allows for efficient thermal management and improved electrical performance in compact designs.

Pinout

The FDD86569-F085 is a dual N-channel MOSFET designed for high-efficiency applications. It features a pin count of 8. The primary functions of this device include switching and power management in various electronic circuits. The pins typically include:
1. Gate1 - Controls the first N-channel MOSFET.
2. Drain1 - Connects to the load for the first MOSFET.
3. Source1 - Connects to ground (or the negative side) for the first MOSFET.
4. Gate2 - Controls the second N-channel MOSFET.
5. Drain2 - Connects to the load for the second MOSFET.
6. Source2 - Connects to ground (or the negative side) for the second MOSFET.
7. Body Diode - Internal diode for both MOSFETs.
8. Common Source - Shared connection for both MOSFET sources.
This device is widely used in power supply circuits, motor drives, and other applications requiring efficient switching.

Manufacturer

The FDD86569-F085 is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor supplier that designs, manufactures, and sells a broad range of electronic components. The company’s products include power management solutions, analog devices, sensors, and discrete semiconductors, which are used in various applications such as automotive, industrial, communications, and consumer electronics. ON Semiconductor focuses on energy-efficient solutions and is known for its commitment to sustainability and innovation in the semiconductor industry.

Application

The FDD86569-F085 is a high-performance RF power transistor primarily used in applications such as wireless communication systems, radar systems, and industrial RF heating. It is suitable for use in VHF to UHF frequency ranges and is often employed in amplifiers for mobile base stations, satellite communications, and other RF transmission systems. Its efficiency and thermal performance make it ideal for high-power applications requiring reliable signal amplification.

Equivalent

The FDD86569-F085 is a power MOSFET. Equivalent products include the NXP FDD86569, Infineon IRF3205, and Vishay Si7851. Always confirm specifications such as voltage, current, and thermal performance to ensure compatibility before substitution.