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FDD8647L
MOSFET N-CH 40V 14A/42A DPAK
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- 製造商。 部分 #FDD8647L
- 包 TO-252-3
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 14A (Ta), 42A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 9mOhm @ 13A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 28 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1640 pF @ 20 V |
| PowerDissipation(Max) | 3.1W (Ta), 43W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
概述
Description
The FDD8647L is a high-performance MOSFET designed for applications in power management, including DC-DC converters and synchronous rectification. It features a low on-resistance (R_DS(on)) which reduces conduction losses, enhancing efficiency in power applications. The device typically operates with a maximum drain-source voltage (V_DS) of 40V and can handle continuous drain current (I_D) ratings that cater to various load demands.
Additionally, the FDD8647L is optimized for low gate charge (Q_g), allowing for faster switching times and improved thermal performance. Its package design often includes DPAK or similar formats, facilitating efficient thermal dissipation.
Due to its robust electrical characteristics, the FDD8647L is well-suited for applications in automotive systems, industrial power supplies, and consumer electronics where reliability and efficiency are critical. The device is compatible with various circuit designs, making it a versatile choice for engineers looking to enhance power efficiency in their projects.
Additionally, the FDD8647L is optimized for low gate charge (Q_g), allowing for faster switching times and improved thermal performance. Its package design often includes DPAK or similar formats, facilitating efficient thermal dissipation.
Due to its robust electrical characteristics, the FDD8647L is well-suited for applications in automotive systems, industrial power supplies, and consumer electronics where reliability and efficiency are critical. The device is compatible with various circuit designs, making it a versatile choice for engineers looking to enhance power efficiency in their projects.
Features
The FDD8647L is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for a variety of power management tasks.
2. Current Rating: Offers a continuous drain current (I_D) of up to 65A, enabling it to handle significant loads.
3. On-Resistance: Has a low on-state resistance (R_DS(on)) of about 9.5 mΩ at V_GS = 10V, which minimizes conduction losses.
4. Thermal Performance: Designed with a thermal resistance (RθJA) that enhances heat dissipation.
5. Package Type: Typically available in a TO-220 package, facilitating easy mounting and efficient heat sinking.
6. Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) ranging from 2 to 4V, suitable for low-voltage drive circuits.
These characteristics make the FDD8647L ideal for applications in power supplies, motor drives, and DC-DC converters.
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for a variety of power management tasks.
2. Current Rating: Offers a continuous drain current (I_D) of up to 65A, enabling it to handle significant loads.
3. On-Resistance: Has a low on-state resistance (R_DS(on)) of about 9.5 mΩ at V_GS = 10V, which minimizes conduction losses.
4. Thermal Performance: Designed with a thermal resistance (RθJA) that enhances heat dissipation.
5. Package Type: Typically available in a TO-220 package, facilitating easy mounting and efficient heat sinking.
6. Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) ranging from 2 to 4V, suitable for low-voltage drive circuits.
These characteristics make the FDD8647L ideal for applications in power supplies, motor drives, and DC-DC converters.
Package
The FDD8647L is typically packaged in a DPAK (TO-252) or similar surface mount package. This package type is designed for efficient thermal management and ease of assembly in electronic circuits.
Pinout
The FDD8647L is a dual N-channel MOSFET with a pin count of 8. It is specifically designed for high-performance power management applications. The key functions of the pins are as follows:
1. GDS Pins (Gate, Drain, Source): Each MOSFET has dedicated gate (G), drain (D), and source (S) pins, typically labeled as G1, D1, S1 for one MOSFET and G2, D2, S2 for the other.
2. Common Source: The source pins of both MOSFETs are often connected together to serve a common connection.
3. Power and Ground: The device is designed to handle high current and has specific pin assignments for power delivery and ground connections.
The FDD8647L is commonly used in applications such as synchronous buck converters, DC-DC converters, and power stage designs.
1. GDS Pins (Gate, Drain, Source): Each MOSFET has dedicated gate (G), drain (D), and source (S) pins, typically labeled as G1, D1, S1 for one MOSFET and G2, D2, S2 for the other.
2. Common Source: The source pins of both MOSFETs are often connected together to serve a common connection.
3. Power and Ground: The device is designed to handle high current and has specific pin assignments for power delivery and ground connections.
The FDD8647L is commonly used in applications such as synchronous buck converters, DC-DC converters, and power stage designs.
Manufacturer
The FDD8647L is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of electronic components including power management, analog, logic, and discrete devices. The company serves various industries such as automotive, industrial, communications, and consumer electronics. Founded in 1999, ON Semiconductor has grown through a series of acquisitions and partnerships, becoming a key player in the semiconductor market with a focus on energy-efficient products and solutions.
Application
The FDD8647L is a dual N-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, power supplies, and motor control systems. It is suitable for high-efficiency switching applications in both consumer electronics and industrial equipment, providing low on-resistance and fast switching capabilities. Additionally, it can be used in battery management systems and electric vehicle powertrains for improved thermal performance and energy efficiency.
Equivalent
The FDD8647L is a Power MOSFET used in various applications. Equivalent products include the FDD8647, FDD8648L, and other MOSFETs with similar voltage and current ratings. For exact equivalents, check specifications like R_DS(on), V_DS, I_D, and package type. Always consult the datasheet for detailed comparison.
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