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FDD86369
MOSFET N-CH 80V 90A DPAK
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規格
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 80 V |
| Current-ContinuousDrain(Id)@25°C | 90A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 7.9mOhm @ 80A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 54 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2530 pF @ 40 V |
| PowerDissipation(Max) | 150W (Tj) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-PAK (TO-252) |
概述
Description
FDD86369 is a specific model of a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various electronic applications, including power management, switching regulators, and inverters. It is known for its low on-resistance, high-speed switching capabilities, and good thermal performance, making it suitable for applications in the automotive, industrial, and consumer electronics sectors. The device typically features a high breakdown voltage and can handle significant current levels, allowing it to efficiently manage power dissipation in circuits.
Key parameters to consider when evaluating the FDD86369 include its R_DS(on), gate threshold voltage, maximum drain-source voltage (V_DS), and total gate charge (Q_g). Understanding these specifications helps engineers select the appropriate MOSFET for their specific application needs, ensuring optimal performance and efficiency.
Key parameters to consider when evaluating the FDD86369 include its R_DS(on), gate threshold voltage, maximum drain-source voltage (V_DS), and total gate charge (Q_g). Understanding these specifications helps engineers select the appropriate MOSFET for their specific application needs, ensuring optimal performance and efficiency.
Features
The FDD86369 is a high-performance, dual-band LTE integrated circuit designed for mobile communication devices. Its key features include:
1. Dual-Band LTE Support: Operates on both FDD and TDD bands, enhancing versatility for various network standards.
2. High Data Rates: Supports download speeds up to 150 Mbps and upload speeds up to 50 Mbps, ensuring efficient data transmission.
3. Low Power Consumption: Designed for energy efficiency, extending battery life in mobile devices.
4. Compact Form Factor: Small size facilitates integration into a wide range of devices, including smartphones and IoT applications.
5. Robust Security Features: Supports advanced encryption standards to safeguard user data and privacy.
6. Multi-Mode Capability: Compatible with multiple connectivity technologies, including 3G and 2G, for backward compatibility.
7. Ease of Integration: Simplified design allows for quicker development cycles in manufacturing.
These features make the FDD86369 suitable for a variety of applications in the mobile telecommunications sector.
1. Dual-Band LTE Support: Operates on both FDD and TDD bands, enhancing versatility for various network standards.
2. High Data Rates: Supports download speeds up to 150 Mbps and upload speeds up to 50 Mbps, ensuring efficient data transmission.
3. Low Power Consumption: Designed for energy efficiency, extending battery life in mobile devices.
4. Compact Form Factor: Small size facilitates integration into a wide range of devices, including smartphones and IoT applications.
5. Robust Security Features: Supports advanced encryption standards to safeguard user data and privacy.
6. Multi-Mode Capability: Compatible with multiple connectivity technologies, including 3G and 2G, for backward compatibility.
7. Ease of Integration: Simplified design allows for quicker development cycles in manufacturing.
These features make the FDD86369 suitable for a variety of applications in the mobile telecommunications sector.
Package
The FDD86369 is typically available in a DPAK (TO-252) package type. This package is designed for surface mount applications and is commonly used in power management and RF applications.
Pinout
The FDD86369 is a N-channel MOSFET designed for various applications including power management and switching. It typically comes in an 8-pin package (SO-8 or similar), which includes the following pin functions:
1. Gate (G) - Controls the on/off state of the MOSFET.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal through which current enters the MOSFET.
4. Body Diode - Provides a path for current when the MOSFET is off, allowing for reverse current flow.
The specific pin configuration may vary depending on the exact package type, so it is crucial to refer to the manufacturer's datasheet for detailed pin assignments and electrical characteristics. The FDD86369 is known for its low on-resistance and fast switching speed, making it suitable for high-efficiency applications.
1. Gate (G) - Controls the on/off state of the MOSFET.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal through which current enters the MOSFET.
4. Body Diode - Provides a path for current when the MOSFET is off, allowing for reverse current flow.
The specific pin configuration may vary depending on the exact package type, so it is crucial to refer to the manufacturer's datasheet for detailed pin assignments and electrical characteristics. The FDD86369 is known for its low on-resistance and fast switching speed, making it suitable for high-efficiency applications.
Manufacturer
The FDD86369 is manufactured by ON Semiconductor, a leading semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of innovative semiconductor solutions, including power management, analog, and discrete components. The company serves various industries, including automotive, industrial, communications, and consumer electronics. They focus on enabling energy-efficient designs and providing high-performance components to meet the demands of modern electronic applications.
Application
FDD86369 is primarily used in wireless communication applications, particularly in LTE and other cellular networks. Its design supports various functions such as power amplification, signal processing, and RF transmission. Additionally, it is utilized in IoT devices, smart meters, and other applications requiring efficient frequency division duplexing.
Equivalent
The FDD86369 chip is typically equivalent to other N-channel MOSFETs with similar specifications. Potential equivalents include the FDD86360, FDD86368, and the FDD86367. Always verify parameters like voltage, current ratings, and package type when looking for substitutes, as variations can affect performance in specific applications.
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