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FDD5612
MOSFET N-CH 60V 5.4A TO252-3
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規格
| Series | PowerTrench® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 5.4A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 30 V |
| Power Dissipation (Max) | 3.8W (Ta), 42W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | FDD561 |
概述
Description
The FDD5612 is a specific model of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), typically used for switching and amplifying electronic signals in various devices. As a part of the N-channel MOSFET family, it operates by allowing the flow of electrical current when a voltage is applied to the gate terminal. The FDD5612 is characterized by its ability to handle significant power levels, making it suitable for applications such as power supply circuits, DC-DC converters, and motor control systems.
Key features of the FDD5612 include low on-resistance, which reduces energy loss and improves efficiency, and high-speed switching capabilities, enabling rapid toggling between on and off states. This MOSFET is often chosen for its robustness and reliability in demanding environments, as well as its compact size, which is advantageous for space-constrained applications. Understanding its specifications, such as maximum current, voltage ratings, and thermal characteristics, is crucial for ensuring optimal performance and integration into electronic systems.
Key features of the FDD5612 include low on-resistance, which reduces energy loss and improves efficiency, and high-speed switching capabilities, enabling rapid toggling between on and off states. This MOSFET is often chosen for its robustness and reliability in demanding environments, as well as its compact size, which is advantageous for space-constrained applications. Understanding its specifications, such as maximum current, voltage ratings, and thermal characteristics, is crucial for ensuring optimal performance and integration into electronic systems.
Features
The FDD5612 is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its efficiency and reliability in electronic applications. Here are some key features:
1. N-Channel MOSFET: Designed for higher efficiency and performance in switching applications.
2. Voltage and Current Ratings: Typically features a high voltage rating, usually around 100V, and can handle considerable current, making it suitable for a variety of applications.
3. Low On-Resistance: Offers low R_DS(on), which minimizes power losses and heat generation during operation.
4. Fast Switching Speed: Capable of fast switching, which is ideal for high-frequency applications.
5. Thermal Performance: Often includes efficient thermal characteristics that help in managing heat dissipation effectively.
6. Applications: Commonly used in applications such as power management, motor control, and DC-DC converters.
7. Package Type: Often available in surface-mount packages like TO-252, which support compact and efficient circuit designs.
These features make the FDD5612 a versatile and reliable choice for a wide range of electronic applications.
1. N-Channel MOSFET: Designed for higher efficiency and performance in switching applications.
2. Voltage and Current Ratings: Typically features a high voltage rating, usually around 100V, and can handle considerable current, making it suitable for a variety of applications.
3. Low On-Resistance: Offers low R_DS(on), which minimizes power losses and heat generation during operation.
4. Fast Switching Speed: Capable of fast switching, which is ideal for high-frequency applications.
5. Thermal Performance: Often includes efficient thermal characteristics that help in managing heat dissipation effectively.
6. Applications: Commonly used in applications such as power management, motor control, and DC-DC converters.
7. Package Type: Often available in surface-mount packages like TO-252, which support compact and efficient circuit designs.
These features make the FDD5612 a versatile and reliable choice for a wide range of electronic applications.
Package
The FDD5612 is a MOSFET with a package type of PowerDI® 3333. This package is known for its compact, thermally efficient design, which is suitable for high-density applications.
Pinout
The FDD5612 is a power MOSFET, specifically an N-channel MOSFET. It typically comes in a standard package, such as the TO-252 (D-PAK), which generally has three pins. The pin functions are as follows:
1. Gate (G): The gate terminal controls the MOSFET's switching. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the current enters the MOSFET when it is in the 'on' state.
3. Source (S): The source is the terminal through which the current exits the MOSFET.
Additionally, the MOSFET’s metal tab in the TO-252 package can serve as the fourth connection point, typically connected to the drain and used for heat dissipation. The FDD5612 is used in various applications such as DC-DC converters, power management, and load switching due to its capability to handle high current and voltage levels efficiently.
1. Gate (G): The gate terminal controls the MOSFET's switching. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the current enters the MOSFET when it is in the 'on' state.
3. Source (S): The source is the terminal through which the current exits the MOSFET.
Additionally, the MOSFET’s metal tab in the TO-252 package can serve as the fourth connection point, typically connected to the drain and used for heat dissipation. The FDD5612 is used in various applications such as DC-DC converters, power management, and load switching due to its capability to handle high current and voltage levels efficiently.
Manufacturer
The FDD5612 is manufactured by ON Semiconductor, a company known for producing semiconductor components. ON Semiconductor, now known as onsemi, is a leading supplier of semiconductor-based solutions. The company designs and manufactures a wide range of products, including power and signal management, logic, discrete, and custom devices. These products are used in various applications across different industries, such as automotive, industrial, cloud power, and Internet of Things (IoT). Onsemi focuses on energy-efficient innovations and solutions that help its customers reduce global energy use.
Application
The FDD5612 is a N-channel MOSFET primarily used in power management applications. Its typical application areas include DC-DC converters, load switching for power management in portable devices, and power supply designs requiring efficient switching. It is also suitable for battery-powered equipment and motor control circuits due to its low on-resistance and fast switching capabilities.
Equivalent
The FDD5612 is a MOSFET used for switching applications. Equivalent or similar products may include:
1. IRF530 from International Rectifier.
2. STF13NM60N from STMicroelectronics.
3. NTD4906N from ON Semiconductor.
4. 2N7002 from various manufacturers for lower power applications.
Always check the datasheets to ensure compatibility in terms of voltage, current, and other electrical characteristics.
1. IRF530 from International Rectifier.
2. STF13NM60N from STMicroelectronics.
3. NTD4906N from ON Semiconductor.
4. 2N7002 from various manufacturers for lower power applications.
Always check the datasheets to ensure compatibility in terms of voltage, current, and other electrical characteristics.
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