FDD2572

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FDD2572

POWER FIELD-EFFECT TRANSISTOR, 4

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規格

Supplier Rochester Electronics, LLC
Package Bulk
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 4A (Ta), 29A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 54mOhm @ 9A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 34 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1770 pF @ 25 V
PowerDissipation(Max) 135W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

概述

Description

FDD2572, also known as "Forecasting the Future of Global Health," is a focused document that outlines key trends and challenges in global health, emphasizing the importance of data-driven decision-making. It highlights the role of innovative technology, health systems strengthening, and addressing social determinants of health to improve population health outcomes. The document serves as a guide for policymakers, researchers, and healthcare professionals in understanding the complexities of health issues on a global scale. By analyzing current healthcare data and projections, FDD2572 aims to inform strategic planning and resource allocation for effective health interventions. It underscores the need for collaboration across sectors and the integration of health into broader development agendas to achieve sustainable health improvements worldwide.

Features

The FDD2572 is a compact, high-performance frequency divider primarily used in communication and radar systems. Key features include:
1. Frequency Range: It typically operates within a specified frequency range, allowing for versatile applications in RF circuits.

2. Divider Ratio: The device supports various division ratios, providing flexibility in frequency scaling.
3. Low Power Consumption: Designed for energy efficiency, making it suitable for battery-powered applications.
4. High Linearity: Ensures minimal distortion, critical for maintaining signal integrity.
5. Temperature Stability: Operates reliably across a wide temperature range, ensuring consistent performance in diverse environments.
6. Compact Design: Its small form factor facilitates integration into space-constrained applications.
7. Ease of Use: Designed with user-friendly features for straightforward implementation in circuit designs.
These features make the FDD2572 an essential component in modern RF applications, enhancing performance while maintaining efficiency.

Package

The FDD2572 is typically packaged in a surface-mount form factor, specifically in a 16-lead TSSOP (Thin Shrink Small Outline Package). This compact design is suitable for various applications in RF and microwave communication systems.

Pinout

The FDD2572 is a dual N-channel MOSFET designed for high-speed switching applications. It typically features a 8-pin package configuration, often in a DPAK or similar surface-mount package.
Pin Count: 8 pins
Pin Functions:
1. Pin 1 (G) - Gate of the first N-channel MOSFET
2. Pin 2 (D) - Drain of the first N-channel MOSFET
3. Pin 3 (S) - Source of the first N-channel MOSFET
4. Pin 4 (S) - Source of the second N-channel MOSFET
5. Pin 5 (D) - Drain of the second N-channel MOSFET
6. Pin 6 (G) - Gate of the second N-channel MOSFET
7. Pin 7 (NC) - No connection (usually left floating)
8. Pin 8 (NC) - No connection (usually left floating)
The FDD2572 is commonly used in power management, motor control, and various switching applications due to its low on-resistance and high efficiency.

Manufacturer

The FDD2572 is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in a wide range of semiconductor solutions, including power management, analog, logic, and discrete components. The company focuses on providing efficient and sustainable semiconductor solutions for various applications, such as automotive, industrial, consumer electronics, and telecommunications. Established in 1999, ON Semiconductor has grown through strategic acquisitions and innovation, positioning itself as a key player in the semiconductor industry.

Application

The FDD2572 is commonly used in various applications, including wireless communication systems, automotive radar, industrial automation, and remote sensing. It serves as a power amplifier in RF circuits, enhancing signal strength and quality. Additionally, it can be utilized in telemetry systems and IoT devices for efficient data transmission and reception.

Equivalent

The FDD2572 chip is a dual N-channel MOSFET, commonly used in power management applications. Equivalent products include the NXP BSS138, Vishay SiS12N, and Fairchild FDN337N. When looking for equivalents, ensure they have similar voltage, current ratings, and package types for compatibility. Always verify datasheets for precise specifications.

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