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FDC638P
MOSFET P-CH 20V 4.5A SUPERSOT6
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規格
| Series | PowerTrench® |
| Part Status | Active |
| Base Product Number | FDC638 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 4.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 10 V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SuperSOT™-6 |
| Package | SOT-23-6 Thin, TSOT-23-6 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概述
Description
FDC638P is a high-performance N-channel MOSFET designed primarily for power management applications. It features low on-resistance and fast switching capabilities, making it suitable for use in DC-DC converters, power supplies, and motor drivers. The device typically operates at high voltages and currents, providing efficiency and thermal performance in compact footprints.
Key specifications often include a maximum drain-source voltage (V_DS), a high continuous drain current (I_D), and a low gate threshold voltage (V_GS(th)). The FDC638P is frequently utilized in consumer electronics, automotive, and industrial applications where reliable power delivery is critical. Its enhanced thermal characteristics help in dissipating heat effectively, thus improving overall system reliability.
For detailed applications and specific performance metrics, always refer to the manufacturer's datasheet.
Key specifications often include a maximum drain-source voltage (V_DS), a high continuous drain current (I_D), and a low gate threshold voltage (V_GS(th)). The FDC638P is frequently utilized in consumer electronics, automotive, and industrial applications where reliable power delivery is critical. Its enhanced thermal characteristics help in dissipating heat effectively, thus improving overall system reliability.
For detailed applications and specific performance metrics, always refer to the manufacturer's datasheet.
Features
The FDC638P is a high-performance, dual N-channel MOSFET designed for power management applications. Key features include:
1. Low On-Resistance (RDS(on)): Offers low on-resistance for efficient power delivery and reduced heat generation.
2. High Voltage Rating: Typically rated for 30V, making it suitable for various applications, including DC-DC converters and power management circuits.
3. Fast Switching Speed: Designed for quick switching times, enhancing overall efficiency in high-frequency applications.
4. Thermal Performance: Equipped with good thermal dissipation capabilities, supporting reliable operation at higher currents.
5. Gate Threshold Voltage: Features a low gate threshold voltage, allowing for better drive performance with lower control voltages.
6. Compact Package: Available in a small footprint package, facilitating space-saving designs in various electronic devices.
These features make the FDC638P ideal for applications in consumer electronics, automotive, and industrial power systems.
1. Low On-Resistance (RDS(on)): Offers low on-resistance for efficient power delivery and reduced heat generation.
2. High Voltage Rating: Typically rated for 30V, making it suitable for various applications, including DC-DC converters and power management circuits.
3. Fast Switching Speed: Designed for quick switching times, enhancing overall efficiency in high-frequency applications.
4. Thermal Performance: Equipped with good thermal dissipation capabilities, supporting reliable operation at higher currents.
5. Gate Threshold Voltage: Features a low gate threshold voltage, allowing for better drive performance with lower control voltages.
6. Compact Package: Available in a small footprint package, facilitating space-saving designs in various electronic devices.
These features make the FDC638P ideal for applications in consumer electronics, automotive, and industrial power systems.
Package
The FDC638P is available in a 5-lead SOT-23 package type.
Pinout
The FDC638P is a dual N-channel MOSFET with a pin count of 8. The pin functions are as follows:
1. Gate 1 (G1): Controls the first MOSFET.
2. Drain 1 (D1): Output for the first MOSFET.
3. Source 1 (S1): Source terminal for the first MOSFET.
4. Gate 2 (G2): Controls the second MOSFET.
5. Drain 2 (D2): Output for the second MOSFET.
6. Source 2 (S2): Source terminal for the second MOSFET.
7. Drain (D): Common drain for both MOSFETs.
8. Source (S): Common source for both MOSFETs.
The FDC638P is commonly used in power management applications due to its low on-resistance and high efficiency.
1. Gate 1 (G1): Controls the first MOSFET.
2. Drain 1 (D1): Output for the first MOSFET.
3. Source 1 (S1): Source terminal for the first MOSFET.
4. Gate 2 (G2): Controls the second MOSFET.
5. Drain 2 (D2): Output for the second MOSFET.
6. Source 2 (S2): Source terminal for the second MOSFET.
7. Drain (D): Common drain for both MOSFETs.
8. Source (S): Common source for both MOSFETs.
The FDC638P is commonly used in power management applications due to its low on-resistance and high efficiency.
Manufacturer
The FDC638P is manufactured by Fairchild Semiconductor, which is a company that specializes in the design and production of semiconductor solutions. Fairchild Semiconductor, known for its innovative approach to power management, analog, and other semiconductor technologies, focuses on providing components used in a variety of applications, including consumer electronics, automotive, and industrial sectors. The company is recognized for its high-performance products, including power MOSFETs, diodes, and integrated circuits. Fairchild was founded in 1957 and has played a significant role in the development of the semiconductor industry over the decades. In 2016, it was acquired by ON Semiconductor, further expanding its capabilities and product offerings.
Application
The FDC638P is primarily used in power management applications, including synchronous buck converters, voltage regulation, and battery management systems. It is suitable for automotive, industrial, and consumer electronics, providing efficient control of power delivery and conversion. Its features also make it applicable in high-frequency switching applications and as a driver for power MOSFETs in various electronic circuits.
Equivalent
The FDC638P is a dual N-channel MOSFET driver. Equivalent products include the NCP81074, MIC4427, and the LM5110. Always verify datasheets for specific electrical characteristics and package compatibility before substitution.
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