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FDC6312P
MOSFET 2P-CH 20V 2.3A SSOT-6
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- 製造商。 部分 #FDC6312P
- 包 SSOT-6
- 資料表 FDC6312P DataSheet
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 2.3A |
| RdsOn(Max)@IdVgs | 115mOhm @ 2.3A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 7nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 467pF @ 10V |
| Power-Max | 700mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | SOT-23-6 Thin, TSOT-23-6 |
概述
Description
FDC6312P is a dual N-channel MOSFET designed for high-efficiency switching applications. It features a low on-resistance, enabling effective power management in various electronic devices, particularly in power supply circuits, DC-DC converters, and motor control applications. The device operates with a maximum drain-source voltage of 30V and can handle continuous drain currents up to 12A, making it suitable for medium-power applications.
With a fast switching speed, the FDC6312P minimizes energy loss during operation, enhancing the overall performance of circuits. Its compact package design allows for space-efficient integration into printed circuit boards (PCBs). The MOSFET is characterized by its thermal performance, enabling reliable operation under varying temperature conditions.
In summary, the FDC6312P is a versatile and efficient component that supports modern electronic designs, particularly where size and energy efficiency are critical.
With a fast switching speed, the FDC6312P minimizes energy loss during operation, enhancing the overall performance of circuits. Its compact package design allows for space-efficient integration into printed circuit boards (PCBs). The MOSFET is characterized by its thermal performance, enabling reliable operation under varying temperature conditions.
In summary, the FDC6312P is a versatile and efficient component that supports modern electronic designs, particularly where size and energy efficiency are critical.
Features
The FDC6312P is a dual N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Low On-Resistance: Offers low R_DS(on) for reduced conduction losses, enhancing overall efficiency.
2. Dual Configuration: Contains two MOSFETs in a single package, ideal for space-saving in circuit designs.
3. High Voltage Rating: Operates at a maximum drain-source voltage (V_DS) of 30V, suitable for various applications.
4. Fast Switching Speed: Provides rapid switching capabilities, making it suitable for high-frequency applications such as DC-DC converters and power management systems.
5. Compact Package: Available in a small footprint, which helps in minimizing PCB space.
6. Thermal Stability: Designed to handle thermal conditions effectively, ensuring reliable performance under load.
These features make the FDC6312P suitable for applications in power supply circuits, motor drivers, and other switching applications.
1. Low On-Resistance: Offers low R_DS(on) for reduced conduction losses, enhancing overall efficiency.
2. Dual Configuration: Contains two MOSFETs in a single package, ideal for space-saving in circuit designs.
3. High Voltage Rating: Operates at a maximum drain-source voltage (V_DS) of 30V, suitable for various applications.
4. Fast Switching Speed: Provides rapid switching capabilities, making it suitable for high-frequency applications such as DC-DC converters and power management systems.
5. Compact Package: Available in a small footprint, which helps in minimizing PCB space.
6. Thermal Stability: Designed to handle thermal conditions effectively, ensuring reliable performance under load.
These features make the FDC6312P suitable for applications in power supply circuits, motor drivers, and other switching applications.
Package
The FDC6312P is typically packaged in a 6-Lead SOT-23 (Small Outline Transistor) package. This compact surface-mount package is designed for efficient space utilization in electronic circuits.
Pinout
The FDC6312P is a dual N-channel MOSFET with a pin count of 8. It is commonly used in applications such as power management and load switching. The pin functions are as follows:
1. Gate 1: Controls the first N-channel MOSFET.
2. Drain 1: Connects to the load for the first MOSFET.
3. Source 1: Connects to ground for the first MOSFET.
4. Gate 2: Controls the second N-channel MOSFET.
5. Drain 2: Connects to the load for the second MOSFET.
6. Source 2: Connects to ground for the second MOSFET.
7. Drain 3 (Common Drain): For common applications.
8. Source 3 (Common Source): For common applications.
This configuration allows for efficient switching and reduced power loss in various electronic circuits.
1. Gate 1: Controls the first N-channel MOSFET.
2. Drain 1: Connects to the load for the first MOSFET.
3. Source 1: Connects to ground for the first MOSFET.
4. Gate 2: Controls the second N-channel MOSFET.
5. Drain 2: Connects to the load for the second MOSFET.
6. Source 2: Connects to ground for the second MOSFET.
7. Drain 3 (Common Drain): For common applications.
8. Source 3 (Common Source): For common applications.
This configuration allows for efficient switching and reduced power loss in various electronic circuits.
Manufacturer
The FDC6312P is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, logic, timing, connectivity, and mixed-signal devices. The company serves various industries, including automotive, communications, computing, consumer electronics, and industrial applications. ON Semiconductor focuses on enabling energy-efficient designs and is known for its commitment to sustainability and innovative technology.
Application
The FDC6312P is a dual-channel, high-speed, low-voltage MOSFET driver commonly used in applications such as motor control, power management systems, synchronous rectification, and LED drivers. Its features make it suitable for battery-powered devices, renewable energy systems, and high-frequency switching applications where efficient gate driving is essential.
Equivalent
The FDC6312P is a dual N-channel MOSFET driver. Equivalent products include the MIC4427, TC4420, and the MAX4421. Other alternatives are the FAN7380 and the IRF540. When selecting an equivalent, consider parameters like voltage ratings, current capacity, and switching speed to ensure compatibility with your application.
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