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FDB52N20TM

Name: FDB52N20TM
Rating: 4.7 (12 reviews)

MOSFET N-CH 200V 52A D2PAK

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資料表 FDB52N20TM DataSheet
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規格

Series	UniFET™
Part Status	Active
Base Product Number	FDB52N20
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	49mOhm @ 26A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 25 V
Power Dissipation (Max)	357W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D2PAK)
Package	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging	Cut Tape (CT), Tape & Reel (TR)

概述

Description

The FDB52N20TM is a high-performance N-channel MOSFET designed for various applications, including power management and switching. It features a low on-resistance and high current-carrying capability, making it suitable for use in power supplies, DC-DC converters, and motor control systems.
With a maximum drain-source voltage (VDS) of 20V and a continuous drain current (ID) rating that varies based on thermal conditions, this MOSFET is ideal for low-voltage applications. Its fast switching speeds enhance efficiency by minimizing power losses during operation.
The FDB52N20TM typically comes in a surface-mount package, facilitating efficient thermal management and space-saving designs. It is also characterized by low gate charge, allowing for reduced drive requirements and improved performance in high-frequency applications.
Overall, the FDB52N20TM is a reliable choice for designers seeking efficient, compact, and high-performance solutions in their electronic circuits.

Features

The FDB52N20TM is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 200V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (Id) of up to 52A, providing robust performance in demanding conditions.
3. Low On-Resistance: The on-resistance (Rds(on)) is low, typically around 0.13 ohms, which minimizes power loss and enhances efficiency.
4. Fast Switching Speed: The device is optimized for fast switching, beneficial in applications like power supplies and motor drives.
5. Thermal Management: It features a maximum junction temperature of 150°C, allowing for effective thermal management in high-power scenarios.
6. TO-220 Package: The packaging facilitates good heat dissipation and easier integration into various circuits.
These characteristics make the FDB52N20TM suitable for applications in power management, automotive systems, and industrial controls.

Package

The FDB52N20TM is typically housed in a TO-220 package. This package type is known for its good thermal performance and is commonly used for power devices, allowing for effective heat dissipation in various electronic applications.

Pinout

The FDB52N20TM is a N-channel MOSFET with a total of 8 pins. Its primary functions include acting as a switch in electronic circuits, handling power management, and facilitating high-speed switching applications. The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET operation (turns it on/off).
2. Drain (D) - The terminal where current flows out.
3. Source (S) - The terminal where current flows in.
4. Body diode - Provides a path for current when the MOSFET is off.
The FDB52N20TM is designed for high voltage and current applications, making it suitable for use in power supplies, motor drives, and other power management systems. Always refer to the specific datasheet for detailed pin functions and electrical characteristics.

Manufacturer

The FDB52N20TM is a product manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was a well-known company in the semiconductor industry, specializing in the design and manufacturing of a variety of semiconductor devices, including power transistors, diodes, and integrated circuits. The company focused on innovative solutions for applications in consumer electronics, automotive, industrial, and communications sectors. Fairchild was recognized for its contributions to power management and analog technology. In 2016, it was acquired by ON Semiconductor, which continues to provide a broad range of semiconductor solutions globally.

Application

The FDB52N20TM is a N-channel MOSFET primarily used in power applications such as DC-DC converters, motor drives, and switching power supplies. Its high efficiency and fast switching capabilities make it suitable for industrial automation, renewable energy systems, and consumer electronics. Additionally, it can be found in applications requiring high current and low voltage drop, enhancing performance in power management circuits.

Equivalent

The FDB52N20TM is a N-channel MOSFET. Equivalent products include:
1. IRF520
2. STP20NM60
3. BSS138
4. FDS6670
5. MTP20N20E
Always verify specifications like voltage, current ratings, and RDS(on) for compatibility in specific applications.