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FDB28N30TM

Name: FDB28N30TM
Rating: 4.7 (12 reviews)

MOSFET N-CH 300V 28A D2PAK

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製造商。部分 #FDB28N30TM
包 SC-70-3
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規格

Package	Tape & Reel (TR),Cut Tape (CT)
Series	UniFET™
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	300 V
Current-ContinuousDrain(Id)@25°C	28A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	129mOhm @ 14A, 10V
Vgs(th)(Max)@Id	5V @ 250µA
GateCharge(Qg)(Max)@Vgs	50 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	2250 pF @ 25 V
PowerDissipation(Max)	250W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	D²PAK (TO-263)

概述

Description

The FDB28N30TM is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of 28A, making it suitable for various switching and amplification tasks in power supplies, motor drivers, and other electronic circuits.
Key specifications include low on-resistance (R_DS(on)), which reduces power losses during operation, and fast switching capabilities, enhancing the efficiency of high-frequency applications. The device typically comes in a TO-220 package, allowing for effective thermal management and easy integration into existing designs.
The FDB28N30TM is widely used in applications such as DC-DC converters, inverters, and automotive electronics. Proper heat sinking and circuit design are essential to maximize its performance and reliability in demanding environments.

Features

The FDB28N30TM is a N-channel MOSFET designed for high-efficiency power applications. Its key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 300V, suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain current up to 28A, providing robust performance in power circuits.
3. RDS(on): Low on-resistance (typically around 0.11Ω), which leads to reduced conduction losses and improved efficiency.
4. Gate Threshold Voltage: A gate threshold voltage (VGS(th)) typically around 2-4V, allowing for easy driving with standard logic levels.
5. Thermal Performance: Good thermal stability with a maximum junction temperature of 150°C, making it suitable for demanding environments.
6. Package Type: Available in a TO-220 package, which enhances heat dissipation and facilitates mounting on heatsinks.
These features make the FDB28N30TM ideal for applications in power supplies, motor drives, and other high-efficiency switching circuits.

Package

The FDB28N30TM is typically packaged in a TO-220 format. This package type is characterized by its metal tab for heat dissipation, making it suitable for high-power applications.

Pinout

The FDB28N30TM is a power MOSFET with a total of 7 pins. Its primary function is to act as a switch or amplifying device in electronic circuits, particularly in power management applications.
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - Connects to the load and is where current flows out.
3. Source (S) - Connects to the ground or the power source and is where current flows in.
4. Body (B) - Internally connected to the source, commonly for protection and stability.
This MOSFET is designed for high-voltage applications, with a maximum drain-source voltage of 30V and a continuous drain current capability of 28A. It's widely used in power supplies, motor control, and other applications requiring efficient power switching.

Manufacturer

The FDB28N30TM is manufactured by Fairchild Semiconductor, which is a semiconductor company known for producing a wide range of products, including power transistors, diodes, and integrated circuits. Fairchild specializes in innovative solutions for power management, lighting, and other applications in consumer electronics, automotive, and industrial sectors. The company is recognized for its commitment to quality and reliability in semiconductor technology. In 2016, Fairchild Semiconductor was acquired by ON Semiconductor, further expanding its reach and capabilities in the semiconductor industry.

Application

The FDB28N30TM is a high-performance n-channel MOSFET primarily used in power management applications. Its key application areas include switching power supplies, motor drivers, DC-DC converters, and inverters in renewable energy systems. It is also utilized in industrial automation, consumer electronics, and automotive circuits for efficient energy conversion and control.

Equivalent

The FDB28N30TM is an N-channel MOSFET. Equivalent products include the IRF3205, STP30NF30, and APT30M30J. These components are similar in specifications such as voltage rating, current handling, and Rds(on). When selecting an equivalent, ensure to check the datasheets for precise electrical characteristics to confirm compatibility with your application.