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FDB070AN06A0

Name: FDB070AN06A0
Rating: 4.7 (12 reviews)

MOSFET N-CH 60V 15A/80A D2PAK

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資料表 FDB070AN06A0 DataSheet
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規格

Series	PowerTrench®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	15A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	66 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 25 V
Power Dissipation (Max)	175W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D2PAK)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number	FDB070

概述

Description

FDB070AN06A0 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in power management applications. It features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of 70A, making it suitable for high-efficiency switching applications. The device’s low on-resistance (R_DS(on)) minimizes power loss during operation, enhancing thermal performance and reliability.
This MOSFET is commonly used in various applications, including DC-DC converters, motor drivers, and power supplies. Its fast switching capabilities are beneficial for high-frequency operations. The FDB070AN06A0 is typically packaged in a TO-220 or similar form factor, facilitating efficient heat dissipation.
When integrating this component into a circuit, proper thermal management and gate drive considerations are crucial to ensure optimal performance. Overall, the FDB070AN06A0 is a versatile and robust choice for designers looking to improve efficiency in power electronic systems.

Features

The FDB070AN06A0 is an N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-to-source voltage (V_DS) of 60V.
2. Current Handling: Capable of continuous drain current (I_D) up to 70A, making it suitable for high-power applications.
3. R_DS(on): Low on-resistance (around 7.8 mΩ at V_GS = 10V), which reduces conduction losses.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) ranging from 2V to 4V, ensuring efficient operation with low gate drive voltages.
5. Package Type: Available in a TO-220 package, providing good thermal performance and ease of mounting.
6. Fast Switching Speed: Suitable for applications requiring high-speed switching, such as DC-DC converters and motor drivers.
Overall, the FDB070AN06A0 is ideal for applications in power electronics, including automotive and industrial systems.

Package

The FDB070AN06A0 is packaged in a TO-220 format, which is a metal can package that provides good thermal performance and ease of mounting. This package type is commonly used for power electronics applications.

Pinout

The FDB070AN06A0 is an N-channel MOSFET with a total of 8 pins. Its primary functions include switching and amplification in power management applications.
The pin configuration is as follows:
1. Gate (G) - Controls the conductivity of the MOSFET.
2. Drain (D) - The main current-carrying terminal.
3. Source (S) - The terminal through which current exits the MOSFET.
Additionally, there are 5 other pins typically used for certain packages and configurations, which may include pins for thermal management or electrical connections depending on the specific package type.
This component is widely used in applications such as DC-DC converters, motor drives, and power management systems due to its low on-resistance and fast switching capabilities.

Manufacturer

The FDB070AN06A0 is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor designs and produces a wide range of semiconductor components, including power management, signal management, discrete, and logic devices. The company serves various industries, including automotive, industrial, communications, consumer, and computing. ON Semiconductor focuses on delivering efficient, high-performance solutions that enable innovation and energy savings in electronic applications.

Application

The FDB070AN06A0 is a power MOSFET primarily used in applications such as DC-DC converters, motor drives, power management systems, and switching power supplies. It is suitable for automotive, industrial, and consumer electronics where efficient power handling and thermal performance are essential.

Equivalent

The FDB070AN06A0 is an N-channel MOSFET. Equivalent products include the IRF540, STP16NF06, and BSM150NF06. Always check specific parameters like voltage, current ratings, and package type to ensure compatibility for your application.