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FDA38N30
MOSFET N-CH 300V 38A TO3PN
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- 資料表 FDA38N30 DataSheet
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規格
| Series | UniFET™ |
| Part Status | Active |
| Base Product Number | FDA38 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 300 V |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
| Power Dissipation (Max) | 312W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
| Package | TO-3P-3, SC-65-3 |
| Packaging | Tube |
概述
Description
FDA38N30 appears to be a specific identifier, potentially referring to a product, regulation, or designation associated with the U.S. Food and Drug Administration (FDA). However, without additional context, it is unclear what it specifically pertains to. The FDA oversees a wide range of areas including food safety, pharmaceuticals, medical devices, and cosmetic regulations. If FDA38N30 relates to a specific drug, medical device, or regulatory guideline, it would typically require detailed knowledge of that particular topic. For accurate information, consulting the FDA's official website or relevant documentation would be advisable to understand its significance and application.
Features
The FDA38N30 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device supports a continuous drain current (Id) of up to 38A, ideal for high-current applications.
3. RDS(on): It has a low on-resistance (RDS(on)), typically around 0.015 ohms at a gate-source voltage (Vgs) of 10V, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is typically between 2V and 4V, allowing for efficient driving with low-voltage control signals.
5. Package Type: Usually available in TO-220 or similar packages for effective heat dissipation.
6. Applications: Commonly used in DC-DC converters, motor drives, and other high-frequency switching applications.
These features make the FDA38N30 a reliable choice for various power management and switching applications.
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device supports a continuous drain current (Id) of up to 38A, ideal for high-current applications.
3. RDS(on): It has a low on-resistance (RDS(on)), typically around 0.015 ohms at a gate-source voltage (Vgs) of 10V, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is typically between 2V and 4V, allowing for efficient driving with low-voltage control signals.
5. Package Type: Usually available in TO-220 or similar packages for effective heat dissipation.
6. Applications: Commonly used in DC-DC converters, motor drives, and other high-frequency switching applications.
These features make the FDA38N30 a reliable choice for various power management and switching applications.
Package
The FDA38N30 is typically packaged in a DPAK (TO-252) configuration. This package type is designed for surface mounting and is commonly used for power semiconductors due to its compact size and efficient thermal performance.
Pinout
The FDA38N30 is an N-channel MOSFET commonly used in power applications. It typically comes in a TO-220 package, which has a pin count of 3.
The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET; applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output, where the current flows out when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, providing a return path for the current.
The FDA38N30 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 30V and a continuous drain current rating of around 38A, making it suitable for various switching and amplification applications.
The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET; applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output, where the current flows out when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, providing a return path for the current.
The FDA38N30 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 30V and a continuous drain current rating of around 38A, making it suitable for various switching and amplification applications.
Manufacturer
The FDA38N30 is manufactured by Fairchild Semiconductor, a subsidiary of ON Semiconductor Corporation. Fairchild Semiconductor is known for its expertise in the design and manufacturing of semiconductor components, including power management, analog, and mixed-signal devices. The company specializes in providing solutions for various applications, such as automotive, industrial, and consumer electronics. Fairchild has a strong focus on innovation and efficiency, offering a range of products that enable improved energy management and performance in electronic systems.
Application
FDA38N30 is a type of thermoplastic elastomer (TPE) commonly used in applications requiring flexibility, durability, and resistance to harsh environments. Its applications include automotive components, medical devices, consumer goods, and industrial seals. The material is valued for its biocompatibility, making it suitable for medical applications, as well as its ability to withstand extreme temperatures and chemical exposure in various industrial settings.
Equivalent
The FDA38N30 is a power MOSFET commonly used in various applications. Equivalent products include the IRF3205, STP30NF30, and FQP30N30. Always check datasheets for specific electrical characteristics to ensure compatibility with your application.
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