圖片僅供參考
FCPF190N60E
MOSFET N-CH 600V 20.6A TO220F
- 製造商
- 製造商。 部分 #FCPF190N60E
- 包 TO-220F-3
- 資料表
- 有現貨的3891
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Package | Tube |
| Series | SuperFET® II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 20.6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 190mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 3.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 82 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3175 pF @ 25 V |
| PowerDissipation(Max) | 39W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220F-3 |
概述
Description
FCPF190N60E is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by ON Semiconductor. This device is designed for high-efficiency switching applications, commonly used in power management circuits, converters, and motor control systems. The "FCPF" designation indicates it is a part of the Fast Switching family of power MOSFETs, while "190" refers to its maximum continuous drain current rating (190A), and "60" denotes its maximum drain-source voltage (60V). The "N" signifies that it is an N-channel MOSFET, which typically offers better performance for high-side switching applications compared to P-channel devices. The "E" at the end of the model number indicates specific package and thermal characteristics. Key features include low on-resistance, fast switching speeds, and thermal stability, making it suitable for demanding applications where efficiency and reliability are crucial. Proper thermal management and circuit design are essential to maximize the performance and lifespan of the FCPF190N60E in its applications.
Features
The FCPF190N60E is a high-performance N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 190A, allowing it to manage substantial loads.
3. On-resistance: It boasts a low on-resistance (R_DS(on)) which reduces power losses and enhances efficiency during operation.
4. Fast Switching: The MOSFET offers fast switching capabilities, which is beneficial for applications like power conversion and motor control.
5. Thermal Performance: With a robust thermal resistance, it can operate effectively at high temperatures, ensuring reliability.
6. TO-220 Package: The device is typically available in a TO-220 package, facilitating easy heat dissipation and mounting.
These features make the FCPF190N60E suitable for various applications, including power supplies, automotive systems, and industrial equipment.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 190A, allowing it to manage substantial loads.
3. On-resistance: It boasts a low on-resistance (R_DS(on)) which reduces power losses and enhances efficiency during operation.
4. Fast Switching: The MOSFET offers fast switching capabilities, which is beneficial for applications like power conversion and motor control.
5. Thermal Performance: With a robust thermal resistance, it can operate effectively at high temperatures, ensuring reliability.
6. TO-220 Package: The device is typically available in a TO-220 package, facilitating easy heat dissipation and mounting.
These features make the FCPF190N60E suitable for various applications, including power supplies, automotive systems, and industrial equipment.
Package
The FCPF190N60E is packaged in a TO-247 form factor. This package type is designed for high-power applications, featuring a robust structure that allows for efficient heat dissipation.
Pinout
The FCPF190N60E is a 600V N-channel MOSFET with a pin count of 3. The pins are typically designated as follows:
1. Gate (G): This pin controls the MOSFET's operation. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET. It connects to the load and allows for the control of current flow.
3. Source (S): This pin is the output of the MOSFET, providing a path for the current to exit to ground or the circuit.
The FCPF190N60E is designed for high-efficiency applications in power conversion and switching, featuring low on-resistance and fast switching capabilities.
1. Gate (G): This pin controls the MOSFET's operation. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET. It connects to the load and allows for the control of current flow.
3. Source (S): This pin is the output of the MOSFET, providing a path for the current to exit to ground or the circuit.
The FCPF190N60E is designed for high-efficiency applications in power conversion and switching, featuring low on-resistance and fast switching capabilities.
Manufacturer
The FCPF190N60E is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor following its acquisition. Fairchild Semiconductor was known for its expertise in power management and analog devices, focusing on semiconductors for various applications, including automotive, industrial, and consumer electronics. The FCPF190N60E is a power MOSFET designed for high-efficiency switching applications, particularly in power supplies and converters. ON Semiconductor continues to provide a wide range of semiconductor solutions, emphasizing energy efficiency and sustainable practices.
Application
The FCPF190N60E is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used in various applications, including industrial motor drives, renewable energy systems (like wind and solar inverters), power supplies, and induction heating. Its ability to handle high voltage and current makes it suitable for applications requiring efficient power conversion and management in electric vehicles, rail traction, and other power electronics systems.
Equivalent
The FCPF190N60E is a 600V N-channel MOSFET. Equivalent products include the IRFHC190N60, STP190N60, and FDP190N60. Always verify specifications such as Rds(on), gate charge, and maximum ratings for compatibility in your application.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25R8035FM1IL0
Macronix
-
MX25L3233FZBI-08Q
Macronix
-
MX25V1635FZNI
Macronix
-
MX25V1635FZNQ03
Macronix
-
MX29F400CBTI-70G
Macronix
-
MX25V2033FM1I
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX25L8035EM2I-10G
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX25R1635FZUIH0
Macronix
-
MX25V1635FM2I
Macronix