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FCP067N65S3
MOSFET N-CH 650V 44A TO220
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規格
| Package | Tube |
| Series | SuperFET® III |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 44A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 67mOhm @ 22A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 4.4mA |
| GateCharge(Qg)(Max)@Vgs | 78 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 3090 pF @ 400 V |
| PowerDissipation(Max) | 312W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
概述
Description
FCP067N65S3 is a model of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-voltage applications, featuring a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 67A at a specified temperature. This MOSFET is part of the company's EcoSPICE series, which emphasizes energy efficiency and thermal performance.
Key specifications include a low on-resistance (R_DS(on)), which helps reduce power loss during operation, making it suitable for applications such as power supplies, inverters, and motor drives. The device is housed in a TO-220 package, allowing for efficient heat dissipation.
The FCP067N65S3 is ideal for applications requiring high efficiency and reliability in switching operations, particularly in industrial and automotive sectors. Its characteristics contribute to improved overall system performance and reduced energy consumption. Always refer to the datasheet for detailed electrical characteristics and thermal management guidelines.
Key specifications include a low on-resistance (R_DS(on)), which helps reduce power loss during operation, making it suitable for applications such as power supplies, inverters, and motor drives. The device is housed in a TO-220 package, allowing for efficient heat dissipation.
The FCP067N65S3 is ideal for applications requiring high efficiency and reliability in switching operations, particularly in industrial and automotive sectors. Its characteristics contribute to improved overall system performance and reduced energy consumption. Always refer to the datasheet for detailed electrical characteristics and thermal management guidelines.
Features
The FCP067N65S3 is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 67A, allowing it to drive substantial loads.
3. Low R_DS(on): With a low on-resistance (typically around 0.067 ohms), it minimizes conduction losses, enhancing efficiency.
4. Fast Switching: Designed for high-speed switching applications, it provides rapid turn-on and turn-off times.
5. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting in power electronics.
6. Thermal Performance: It supports high thermal conductivity for improved reliability in demanding environments.
These features make the FCP067N65S3 ideal for applications like power supplies, DC-DC converters, and motor drives.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 67A, allowing it to drive substantial loads.
3. Low R_DS(on): With a low on-resistance (typically around 0.067 ohms), it minimizes conduction losses, enhancing efficiency.
4. Fast Switching: Designed for high-speed switching applications, it provides rapid turn-on and turn-off times.
5. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting in power electronics.
6. Thermal Performance: It supports high thermal conductivity for improved reliability in demanding environments.
These features make the FCP067N65S3 ideal for applications like power supplies, DC-DC converters, and motor drives.
Package
The FCP067N65S3 is typically packaged in a TO-247 package type. This packaging is designed for high-power applications, offering effective heat dissipation and robust performance in various electronic circuits.
Pinout
The FCP067N65S3 is a N-channel MOSFET from Fairchild Semiconductor, designed for high voltage and high-speed applications. It features a TO-220 package with a pin count of three. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET and is responsible for turning it on or off by applying a voltage.
2. Drain (D): This pin is the terminal through which the current flows out when the MOSFET is turned on. It connects to the load.
3. Source (S): This pin is the terminal through which the current enters the MOSFET. It is typically connected to ground or the negative side of the circuit.
The FCP067N65S3 has a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) rating of 67A, making it suitable for various power electronics applications.
1. Gate (G): This pin is used to control the MOSFET and is responsible for turning it on or off by applying a voltage.
2. Drain (D): This pin is the terminal through which the current flows out when the MOSFET is turned on. It connects to the load.
3. Source (S): This pin is the terminal through which the current enters the MOSFET. It is typically connected to ground or the negative side of the circuit.
The FCP067N65S3 has a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) rating of 67A, making it suitable for various power electronics applications.
Manufacturer
The FCP067N65S3 is manufactured by Fairchild Semiconductor, a company that specializes in semiconductor solutions. Fairchild, founded in 1957, is known for its wide range of products, including power management, signal management, and optoelectronics. The company focuses on providing innovative technology for various applications, including automotive, industrial, and consumer electronics. Fairchild is recognized for its expertise in power semiconductors, including MOSFETs, diodes, and integrated circuits. It was acquired by ON Semiconductor in 2016, further expanding its portfolio and market reach in the semiconductor industry.
Application
The FCP067N65S3 is a 650V N-channel MOSFET, commonly used in applications such as power supplies, motor drives, and inverters. Its efficiency and switching capabilities make it suitable for renewable energy systems, electric vehicles, and industrial automation. Additionally, it can be found in high-frequency converters and lighting control circuits, where reliable performance under high voltage and current conditions is essential.
Equivalent
The FCP067N65S3 is a 650V N-channel MOSFET. Equivalent products include the Infineon IPP65R067P6, STMicroelectronics STP67N65M5, and ON Semiconductor NTMFS5C685NL. Always check the specific datasheets for detailed specifications and ensure compatibility with your circuit requirements.
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