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FCH041N60E
MOSFET N-CH 600V 77A TO247-3
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- 製造商。 部分 #FCH041N60E
- 包 TO-247-3
- 資料表 FCH041N60E DataSheet
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規格
| Package | Tube |
| Series | SuperFET® II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 77A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 41mOhm @ 39A, 10V |
| Vgs(th)(Max)@Id | 3.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 380 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 13700 pF @ 100 V |
| PowerDissipation(Max) | 592W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
概述
Description
The FCH041N60E is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. With a voltage rating of 600V and a continuous drain current of 41A, it is suitable for high-voltage switching applications, such as in power supplies, motor drives, and energy conversion systems.
Key features include low on-resistance (RDS(on)), which enhances efficiency by minimizing power losses during operation. Its fast switching speed allows for improved performance in high-frequency applications. The device is housed in a TO-220 package, providing efficient thermal management.
The FCH041N60E is often utilized in applications requiring robust and reliable performance, including renewable energy systems (like solar inverters), industrial automation, and consumer electronics. Overall, it is a versatile component ideal for engineers seeking to optimize power management in their designs.
Key features include low on-resistance (RDS(on)), which enhances efficiency by minimizing power losses during operation. Its fast switching speed allows for improved performance in high-frequency applications. The device is housed in a TO-220 package, providing efficient thermal management.
The FCH041N60E is often utilized in applications requiring robust and reliable performance, including renewable energy systems (like solar inverters), industrial automation, and consumer electronics. Overall, it is a versatile component ideal for engineers seeking to optimize power management in their designs.
Features
The FCH041N60E is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Capability: It has a continuous drain current (I_D) rating of 41A, allowing it to handle significant load currents.
3. R_DS(on): Low on-state resistance (typically around 0.041 ohms), which reduces conduction losses and improves efficiency in power applications.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2-4V, facilitating easy interfacing with standard gate drive circuits.
5. Fast Switching Speed: Ideal for applications requiring quick switching, such as in power supplies and converters.
6. Package Type: Available in a TO-220 package, which aids in effective heat dissipation.
7. Thermal Resistance: Low thermal resistance helps maintain stable operation and reliability at high temperatures.
Overall, the FCH041N60E is well-suited for applications in power electronics, including motor control, power supplies, and inverters.
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Capability: It has a continuous drain current (I_D) rating of 41A, allowing it to handle significant load currents.
3. R_DS(on): Low on-state resistance (typically around 0.041 ohms), which reduces conduction losses and improves efficiency in power applications.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2-4V, facilitating easy interfacing with standard gate drive circuits.
5. Fast Switching Speed: Ideal for applications requiring quick switching, such as in power supplies and converters.
6. Package Type: Available in a TO-220 package, which aids in effective heat dissipation.
7. Thermal Resistance: Low thermal resistance helps maintain stable operation and reliability at high temperatures.
Overall, the FCH041N60E is well-suited for applications in power electronics, including motor control, power supplies, and inverters.
Package
The FCH041N60E is typically packaged in a TO-220 format. This package provides good thermal performance and is suitable for power applications, allowing for efficient heat dissipation and easy mounting on heatsinks.
Pinout
The FCH041N60E is an N-channel MOSFET designed for high-voltage applications. It typically comes in a TO-220 package, which features a pin count of three. The pin functions are as follows:
1. Gate (G): Controls the switching of the MOSFET. A voltage applied to this pin allows current to flow from the drain to the source.
2. Drain (D): The terminal through which the current exits the MOSFET when it is turned on.
3. Source (S): The terminal through which the current enters the MOSFET.
This device is capable of handling high voltages (up to 600V) and currents, making it suitable for various applications, including power supplies and motor drives.
1. Gate (G): Controls the switching of the MOSFET. A voltage applied to this pin allows current to flow from the drain to the source.
2. Drain (D): The terminal through which the current exits the MOSFET when it is turned on.
3. Source (S): The terminal through which the current enters the MOSFET.
This device is capable of handling high voltages (up to 600V) and currents, making it suitable for various applications, including power supplies and motor drives.
Manufacturer
The FCH041N60E is manufactured by Fairchild Semiconductor, a company known for producing a wide range of semiconductor products. Fairchild, founded in 1957, specializes in power management, analog, and mixed-signal devices, serving various industries including automotive, consumer electronics, and industrial applications. It has a strong reputation for innovation in power transistors, integrated circuits, and other semiconductor solutions. In 2016, Fairchild was acquired by ON Semiconductor, which further extended its portfolio and market reach.
Application
The FCH041N60E is a N-channel MOSFET often used in applications such as power supplies, motor drives, and DC-DC converters. Its high voltage and current handling capabilities make it suitable for industrial automation, renewable energy systems, and electric vehicles. Additionally, it can be used in lighting control circuits and consumer electronics for efficient power management.
Equivalent
The FCH041N60E is an N-channel MOSFET with a 600V rating, 41A continuous current, and a low RDS(on). Equivalent products include the Infineon IPW60R041C3, STMicroelectronics STP41NF60, and Fairchild FQP41N60. Always verify the specific characteristics such as RDS(on), VGS(th), and package type to ensure compatibility in your application.
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