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FCH023N65S3L4

Name: FCH023N65S3L4
Rating: 4.7 (12 reviews)

MOSFET N-CH 650V 75A TO247

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製造商。部分 #FCH023N65S3L4
包 TO-247-4
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規格

Package	Tube
Series	SuperFET® III
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	650 V
Current-ContinuousDrain(Id)@25°C	75A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	23mOhm @ 37.5A, 10V
Vgs(th)(Max)@Id	4.5V @ 7.5mA
GateCharge(Qg)(Max)@Vgs	222 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	7160 pF @ 400 V
PowerDissipation(Max)	595W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-247

概述

Description

The FCH023N65S3L4 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching applications. It features a voltage rating of 650V and a continuous drain current of 23A, making it suitable for use in power supply circuits, motor drives, and renewable energy systems. The device is characterized by low on-resistance (R_DS(on)), which enhances its efficiency by reducing power losses during operation.
Key features include a fast switching speed, which allows for improved thermal management and efficiency in high-frequency applications. It typically comes in a TO-220 package, facilitating easy heat dissipation and integration into various circuit designs. The FCH023N65S3L4 is ideal for engineers seeking reliable performance in high-voltage environments while minimizing energy losses. Its robust design and efficient characteristics make it a popular choice in industrial and commercial applications.

Features

The FCH023N65S3L4 is a high-performance N-channel MOSFET designed for various power electronics applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 650V, making it suitable for high-voltage applications.
2. RDS(on): The device offers a low on-resistance (RDS(on)) of approximately 0.023 ohms, which enhances efficiency and reduces power loss.
3. Current Handling: It supports a continuous drain current (Id) of up to 23A, allowing it to manage significant loads.
4. Gate Threshold Voltage (Vgs): The threshold voltage ranges from 2V to 4V, facilitating easy drive from standard gate voltages.
5. Fast Switching: The MOSFET features low gate charge (Qg), enabling fast switching speeds suitable for high-frequency applications.
6. Package: Typically available in a TO-220 or similar package, which aids in heat dissipation.
These characteristics make the FCH023N65S3L4 ideal for use in power supplies, inverters, and motor control applications.

Package

The FCH023N65S3L4 is packaged in a TO-247 form factor, designed for high-power applications. This package type features a robust design that facilitates heat dissipation and ensures reliable performance in demanding environments.

Pinout

The FCH023N65S3L4 is a 650V N-channel MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). It features a TO-220 package with a total of three pins.
The pin functions are as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. Applying a voltage to this pin turns the device on, allowing current to flow from the drain to the source.
2. Drain (D): The drain pin is where the high voltage or load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the negative side of the circuit. It completes the circuit when the MOSFET is conducting.
Overall, the FCH023N65S3L4 is designed for applications requiring high efficiency and fast switching, such as power supplies and converters.

Manufacturer

The FCH023N65S3L4 is manufactured by ON Semiconductor, a company specializing in semiconductor solutions. ON Semiconductor designs and produces a wide range of electronic components, including power management, analog, and digital semiconductors. The company serves various industries, including automotive, industrial, consumer electronics, and communications. ON Semiconductor focuses on sustainability and innovation, providing energy-efficient technologies and solutions to meet the evolving needs of its customers.

Application

The FCH023N65S3L4 is a N-channel MOSFET primarily used in power electronics applications. Key areas include DC-DC converters, power management systems, and motor control circuits. Its high voltage and current ratings make it suitable for industrial automation, renewable energy systems, and electric vehicles. Additionally, it is used in consumer electronics for efficient power supply designs.

Equivalent

The FCH023N65S3L4 is a 650V N-channel MOSFET. Equivalent products include:
1. STP23NM60N
2. IRFHL810
3. BUK7M65-100
4. APT23M65B
5. IXFH23N65P
Always check specific parameters such as Rds(on), Vgs, and package type to ensure compatibility.