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EMB20P03V
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- 資料表 EMB20P03V DataSheet
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規格
| Manufacturer | EMC |
| Package | DFN-8(3x3) |
| Operating Temperature | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 18A |
| Pd - Power Dissipation | 2.5W |
| Drain to Source Voltage | 30V |
| RDS(on) | 20mΩ@10V,10A |
| Type | 1 piece P-channel |
| Gate Charge(Qg) | 20.3nC@10V |
| Input Capacitance(Ciss@Vds) | 1407pF@15V |
| Reverse Transfer Capacitance (Crss@Vds) | 164pF@15V |
概述
Description
EMB20P03V typically refers to a specific course or program, possibly in the context of educational institutions or training modules. The introduction to EMB20P03V would likely cover the foundational concepts, objectives, and structure of the course. It may include information on the subject matter, key skills to be developed, and the overall learning outcomes expected from participants.
This program could be focused on various topics, such as business management, technology, or specialized industry practices, depending on the context. It may also outline assessment methods, required materials, and prerequisites for enrollment.
For precise details, it would be best to consult the official course syllabus or the institution offering EMB20P03V.
This program could be focused on various topics, such as business management, technology, or specialized industry practices, depending on the context. It may also outline assessment methods, required materials, and prerequisites for enrollment.
For precise details, it would be best to consult the official course syllabus or the institution offering EMB20P03V.
Features
The EMB20P03V is a power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Handling: Capable of handling continuous drain currents up to 20A, ensuring robust performance in demanding environments.
3. On-Resistance (Rds(on)): Low on-resistance (around 10 mΩ at Vgs = 10V) minimizes conduction losses, enhancing efficiency.
4. Gate Threshold Voltage (Vgs(th)): Features a low gate threshold voltage, allowing for easy drive with standard logic levels.
5. Package Type: Often available in compact packaging, such as DPAK or TO-220, facilitating easy integration into circuits.
6. Switching Speed: Fast switching capabilities, suitable for applications requiring rapid turn-on and turn-off.
These characteristics make the EMB20P03V suitable for use in power management, motor control, and DC-DC converter applications.
1. Voltage Rating: It typically has a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Handling: Capable of handling continuous drain currents up to 20A, ensuring robust performance in demanding environments.
3. On-Resistance (Rds(on)): Low on-resistance (around 10 mΩ at Vgs = 10V) minimizes conduction losses, enhancing efficiency.
4. Gate Threshold Voltage (Vgs(th)): Features a low gate threshold voltage, allowing for easy drive with standard logic levels.
5. Package Type: Often available in compact packaging, such as DPAK or TO-220, facilitating easy integration into circuits.
6. Switching Speed: Fast switching capabilities, suitable for applications requiring rapid turn-on and turn-off.
These characteristics make the EMB20P03V suitable for use in power management, motor control, and DC-DC converter applications.
Package
The EMB20P03V is packaged in a TO-220 format. This type of package is typically used for power transistors, providing good thermal performance and ease of mounting on heatsinks.
Pinout
The EMB20P03V is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) typically used in power management applications. It has a total of 3 pins.
The pinout functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows the device to switch on or off, controlling the flow of current between the source and drain.
2. Source (S): This pin is connected to the higher voltage side of the circuit. For a P-channel MOSFET, the source is typically connected to the positive supply voltage.
3. Drain (D): This pin is connected to the load. Current flows from the source to the drain when the MOSFET is turned on.
The EMB20P03V is characterized by its ability to handle high currents and voltages, making it suitable for various power switching applications.
The pinout functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows the device to switch on or off, controlling the flow of current between the source and drain.
2. Source (S): This pin is connected to the higher voltage side of the circuit. For a P-channel MOSFET, the source is typically connected to the positive supply voltage.
3. Drain (D): This pin is connected to the load. Current flows from the source to the drain when the MOSFET is turned on.
The EMB20P03V is characterized by its ability to handle high currents and voltages, making it suitable for various power switching applications.
Manufacturer
The EMB20P03V is manufactured by EMB (Electro-Magnetic Components), a company specializing in semiconductor devices, particularly power MOSFETs. EMB is known for producing high-performance components used in various applications, including industrial, automotive, and consumer electronics. Companies like EMB focus on innovation in materials and technology to enhance the efficiency and reliability of their products.
Application
The EMB20P03V is a power MOSFET commonly used in applications such as power management, voltage regulation, motor control, and switching power supplies. It is suitable for use in consumer electronics, automotive systems, and industrial equipment due to its low on-resistance and fast switching capabilities, enhancing efficiency and performance in various electronic circuits.
Equivalent
The EMB20P03V is an N-channel MOSFET. Equivalent products include the FDS6680, AO3400, and IRF3205. Always verify specifications like voltage, current, and RDS(on) for compatibility.
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