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EM63A165TS-6G
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規格
| Manufacturer | Etron Tech |
| Package | TSOP-54-10.2mm |
概述
Description
The EM63A165TS-6G is a 256 Megabit (Mb) DRAM (Dynamic Random-Access Memory) chip produced by Etron Technology. It features a x16 I/O interface, allowing it to transfer data in 16-bit-wide chunks. The chip operates on a low voltage of 1.8V, which enhances power efficiency, making it suitable for mobile and portable applications.
This DRAM module is based on a synchronous design, meaning it can synchronize operations with a clock signal to improve data access speeds. It supports various memory access modes and commands, ensuring compatibility with a wide range of devices. The EM63A165TS-6G is often used in consumer electronics, such as smartphones, tablets, and other embedded systems, where performance and low power consumption are critical.
Overall, the EM63A165TS-6G combines high-density memory with energy efficiency, making it a viable choice for modern electronic applications.
This DRAM module is based on a synchronous design, meaning it can synchronize operations with a clock signal to improve data access speeds. It supports various memory access modes and commands, ensuring compatibility with a wide range of devices. The EM63A165TS-6G is often used in consumer electronics, such as smartphones, tablets, and other embedded systems, where performance and low power consumption are critical.
Overall, the EM63A165TS-6G combines high-density memory with energy efficiency, making it a viable choice for modern electronic applications.
Features
The EM63A165TS-6G is a 1 Gigabit (128M x 8) DDR3 SDRAM memory chip manufactured by Etron Technology. Key features include:
1. Technology: DDR3 SDRAM (Double Data Rate Synchronous Dynamic RAM).
2. Capacity: 1 Gb (128 Megabytes).
3. Interface: 8-bit wide data I/O.
4. Voltage: Operates at 1.5V, compliant with DDR3 standards.
5. Speed: Supports data rates of up to 1066 MT/s.
6. Packaging: Available in a 78-ball TFBGA (Thin Fine-pitch Ball Grid Array) package.
7. Refresh: Includes self-refresh and auto-refresh capabilities to maintain data integrity.
8. Configuration: Organized as 128M x 8, allowing for efficient data access and storage.
9. Applications: Suitable for various applications including mobile devices, consumer electronics, and general computing.
Its design focuses on high performance and energy efficiency, making it ideal for modern digital applications.
1. Technology: DDR3 SDRAM (Double Data Rate Synchronous Dynamic RAM).
2. Capacity: 1 Gb (128 Megabytes).
3. Interface: 8-bit wide data I/O.
4. Voltage: Operates at 1.5V, compliant with DDR3 standards.
5. Speed: Supports data rates of up to 1066 MT/s.
6. Packaging: Available in a 78-ball TFBGA (Thin Fine-pitch Ball Grid Array) package.
7. Refresh: Includes self-refresh and auto-refresh capabilities to maintain data integrity.
8. Configuration: Organized as 128M x 8, allowing for efficient data access and storage.
9. Applications: Suitable for various applications including mobile devices, consumer electronics, and general computing.
Its design focuses on high performance and energy efficiency, making it ideal for modern digital applications.
Package
The EM63A165TS-6G is packaged in a 54-pin TSOP II (Thin Small Outline Package). This package type is designed for high-density memory applications, providing a compact form factor suitable for various electronic devices.
Pinout
The EM63A165TS-6G is a 1 Gigabit (128MB) DDR3 SDRAM memory chip with a pin count of 78. It is designed for use in various applications, including computer memory and embedded systems.
The basic functions of the EM63A165TS-6G include:
1. Data Storage: It stores data temporarily for quick access by the CPU.
2. Read/Write Operations: Supports high-speed read and write operations.
3. Memory Access: Utilizes a 16-bit data bus, allowing simultaneous data transfers.
4. Power Management: Operates with low power consumption in various modes.
This memory chip operates at a voltage of 1.5V and supports various data rates, making it suitable for high-performance applications.
The basic functions of the EM63A165TS-6G include:
1. Data Storage: It stores data temporarily for quick access by the CPU.
2. Read/Write Operations: Supports high-speed read and write operations.
3. Memory Access: Utilizes a 16-bit data bus, allowing simultaneous data transfers.
4. Power Management: Operates with low power consumption in various modes.
This memory chip operates at a voltage of 1.5V and supports various data rates, making it suitable for high-performance applications.
Manufacturer
The EM63A165TS-6G is manufactured by Etron Technology, Inc. Etron is a semiconductor company based in Taiwan that specializes in the design and production of memory and storage solutions, including DRAM and flash memory products. Established in 1991, Etron focuses on providing high-performance memory solutions for various applications, including consumer electronics, telecommunications, and computing. They are known for their innovation in memory technology and cater to a diverse range of industries, emphasizing quality and reliability in their products.
Application
The EM63A165TS-6G is a 16Mb DRAM (Dynamic Random Access Memory) chip commonly used in various applications including mobile devices, consumer electronics, digital cameras, automotive systems, and industrial applications. Its low power consumption and high-speed performance make it suitable for portable devices requiring efficient memory solutions. Additionally, it can be utilized in networking equipment and gaming consoles for enhanced data storage and processing capabilities.
Equivalent
The EM63A165TS-6G is a 1Gb DDR3 SDRAM memory chip. Equivalent products include:
1. MT41K256M16HA-125 from Micron
2. H5TQ1G83AFR from Hynix
3. K4B4G1646C from Samsung
Always verify compatibility based on specific application requirements such as timing, voltage, and packaging.
1. MT41K256M16HA-125 from Micron
2. H5TQ1G83AFR from Hynix
3. K4B4G1646C from Samsung
Always verify compatibility based on specific application requirements such as timing, voltage, and packaging.
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