DS1245Y-70IND+

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DS1245Y-70IND+

IC NVSRAM 1MBIT PARALLEL 32EDIP

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規格

Package Tube
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
MemorySize 1Mb (128K x 8)
MemoryInterface Parallel
WriteCycleTime-WordPage 70ns
AccessTime 70 ns
Voltage-Supply 4.5V ~ 5.5V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Through Hole
Package/Case 32-DIP Module (0.600, 15.24mm)

概述

Description

DS1245Y-70IND+ is a battery-backed NVSRAM (non-volatile static RAM) device from Dallas Semiconductor (now Maxim). It combines fast SRAM with an internal energy source to retain memory contents during power loss, providing non-volatile storage without a separate battery module.
Key points:
- 8-bit parallel memory with an on-chip backup supply for data retention when Vcc is lost.
- -70 indicates about 70 ns access time; IND+ denotes industrial temperature range (-40°C to +85°C) and an industrial/robust package.
- Standard 8-bit SRAM-style interface (address lines, data I/O, chip select, output enable, write enable).
- Typically operates from a 5V supply (with backup energy source). Exact capacity and pinout vary by variant—check the datasheet for the specific DS1245Y-70IND+ you’re using.
- Common applications: BIOS/firmware storage, data logging, event recording, and other embedded systems requiring fast access with guaranteed data retention during power outages.
Note: For precise memory size, electrical characteristics, and pin configuration, consult the DS1245Y datasheet.

Features

DS1245Y-70IND+ is a high-speed, battery-backed nonvolatile RAM (NVSRAM) device. Key features:
- Battery-backed NVSRAM: retains data during power loss using an on-board energy source.
- Speed: 70 ns access time (as indicated by the -70 in the part number).
- Capacity: 64K x 8 NVSRAM (variant-dependent; commonly used size for this family).
- Interface: 8-bit parallel data bus with standard SRAM-like control signals (CS, WE, OE).
- Supply: 5V operation; TTL-compatible I/O.
- Temperature: Industrial range (-40°C to +85°C).
- Data retention: typically >10 years without power.
- Endurance: very high write endurance (on the order of 10^12+ cycles typical for NVSRAM).
- Protections: power-fail write protection to preserve data integrity on power loss.
- Packages: available in standard leaded and surface-mount options (e.g., DIP, SOIC).
- Applications: BIOS/firmware storage, embedded systems, high-reliability nonvolatile storage.
Note: exact capacity and package options can vary by specific datasheet revision; DS1245Y-70IND+ denotes the 70 ns, industrial-temp variant.

Package

8-pin DIP (DIP-8) plastic package, industrial temperature range.

Pinout

- Pin count: 70 pins (70IND+ industrial package)
- Function: DS1245Y-70IND+ is a nonvolatile SRAM with an integrated real-time clock (RTC), providing battery-backed RAM with a backup supply/trickle-charge circuit for data retention across power losses.

Manufacturer

- Manufacturer: Dallas Semiconductor (DS).
- What kind of company: A semiconductor company that designs and manufactures integrated circuits, including memory ICs (e.g., non-volatile RAM). Note: Dallas Semiconductor later became part of Maxim Integrated (and subsequently Analog Devices).

Application

Typically used in industrial and embedded systems needing nonvolatile, fast-writing memory that retains data during power loss. Key applications: data logging and archival (sensor data, event logs), parameter/configuration storage for controllers/PLCs, firmware backup and recovery, telecom/network equipment, automotive/telematics edge devices, and portable instrumentation that must survive power interruptions.

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