DRV5055A4QDBZR

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DRV5055A4QDBZR

SENSR HALL EFFECT ANALOG SOT23-3

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規格

Part Status Active
Technology Hall Effect
Axis Single
Output Type Analog Voltage
Sensing Range ±169mT
Voltage - Supply 3V ~ 3.63V, 4.5V ~ 5.5V
Current - Supply (Max) 10mA
Current - Output (Max) 1mA
Bandwidth 20kHz
Operating Temperature -40°C ~ 125°C
Features Temperature Compensated
Supplier Device Package SOT-23-3
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number DRV5055

概述

Description

The DRV5055A4QDBZR is a high-performance magnetic sensor from Texas Instruments, designed for applications such as position sensing, speed detection, and current sensing. It utilizes a Hall effect sensing element to detect magnetic fields, providing a digital output that indicates the presence or absence of a magnetic field.
Key features include a wide operating voltage range (2.7V to 38V), low power consumption, and a robust design that makes it suitable for harsh environments. The device has an integrated signal processing circuit that enhances accuracy and reduces noise, ensuring reliable performance.
The DRV5055A4QDBZR is available in a compact package, making it ideal for space-constrained applications. Its versatile nature allows it to be employed in automotive, industrial, and consumer electronics sectors. Overall, the DRV5055A4QDBZR is an effective solution for various magnetic sensing applications, combining reliability with high precision.

Features

The DRV5055A4QDBZR is a high-precision, digital Hall-effect sensor designed for various applications. Key features include:
1. Digital Output: Provides a stable digital signal indicating the presence or absence of a magnetic field.
2. High Sensitivity: Capable of detecting small magnetic fields, enabling precise applications.
3. Low Power Consumption: Ideal for battery-operated devices with energy efficiency in mind.
4. Wide Supply Voltage Range: Operates from 2.7V to 38V, accommodating various power supply configurations.
5. Temperature Stability: Maintains performance over a wide temperature range, enhancing reliability.
6. Built-in Temperature Compensation: Ensures accurate output regardless of temperature fluctuations.
7. Small Package Size: Available in a compact QFN package, suitable for space-constrained designs.
8. Integrated Protection Features: Designed to withstand ESD and other electrical stresses, enhancing durability.
These features make the DRV5055A4QDBZR suitable for applications in automotive, industrial, and consumer electronics.

Package

The DRV5055A4QDBZR is packaged in a 4-pin, thin SOT (Small Outline Transistor) package, specifically the SOT-23 type. This compact package design is suitable for space-constrained applications.

Pinout

The DRV5055A4QDBZR is a Hall-effect sensor with a total of 3 pins. Its pin configuration and functions are as follows:
1. VCC (Pin 1): This pin is the supply voltage input. It typically operates from 4.5V to 38V.
2. GND (Pin 2): This pin is the ground connection for the device.
3. OUT (Pin 3): This pin provides the output signal. It is a digital output that changes state in response to the presence of a magnetic field, allowing for various applications such as position sensing and proximity detection.
The device is designed to provide a clean, reliable output based on magnetic field detection, making it suitable for a range of industrial and automotive applications.

Manufacturer

The DRV5055A4QDBZR is manufactured by Texas Instruments (TI), a prominent American technology company. Founded in 1930, Texas Instruments specializes in designing and manufacturing semiconductors and various integrated circuits. The company is widely recognized for its innovation in analog and embedded processing technologies, serving a range of industries including automotive, industrial, communications, and consumer electronics. TI is known for its commitment to research and development, producing a broad portfolio of products that include sensors, amplifiers, microcontrollers, and signal processing devices. The DRV5055A4QDBZR is a magnetic sensor used for applications such as position sensing and current detection.

Application

The DRV5055A4QDBZR is a Hall-effect sensor used in various applications including automotive (e.g., position sensing, motor control), industrial (e.g., equipment monitoring, proximity sensing), consumer electronics (e.g., mobile device orientation), and medical devices (e.g., fluid flow measurement). Its precise magnetic sensing capabilities make it ideal for detecting magnetic fields in these diverse fields.

Equivalent

The DRV5055A4QDBZR chip is a Hall effect sensor. Equivalent products include the Allegro A1324, A1325, and A1326 sensors, as well as the Honeywell SS495A1 and SS495A2. Additionally, the Melexis MLX90333 and MLX90334 can serve as alternatives. Always verify specifications for compatibility.

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