DRV5013AGQDBZR

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DRV5013AGQDBZR

MAGNETIC SWITCH LATCH SOT23-3

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  • 包 SOT23-3
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規格

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
Function Latch
Technology Hall Effect
Polarization South Pole
SensingRange 9mT Trip, -9mT Release
TestCondition -40°C ~ 125°C
Voltage-Supply 2.7V ~ 38V
Current-Supply(Max) 2.7mA (Typ)
Current-Output(Max) 30mA
OutputType Open Drain
Features Temperature Compensated
OperatingTemperature -40°C ~ 125°C (TA)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3

概述

Description

The DRV5013AGQDBZR is a Hall effect magnetic sensor IC from Texas Instruments. It is designed to detect and measure magnetic fields for various applications. This device operates using the Hall effect principle, which generates a voltage proportional to the magnetic field perpendicular to the device's surface.
Key features include:
1. Sensitivity: It is sensitive to magnetic fields and can detect both north and south magnetic poles, making it suitable for proximity sensing, rotational speed sensing, and position detection.

2. Operating Voltage: The DRV5013 typically operates within a voltage range suitable for most electronic applications.
3. Output: It provides a digital output signal that changes based on the presence of a magnetic field, which can be easily interfaced with microcontrollers and other digital logic systems.
4. Package: The "GQDBZR" in the part number refers to the specific package type and reel size, indicating it is a small footprint device suitable for space-constrained applications.
This sensor is widely used in automotive, industrial, and consumer electronics for applications requiring reliable magnetic field detection.

Features

The DRV5013AGQDBZR is a Hall effect sensor designed for magnetic field detection. Key features include:
1. Bipolar Latch: The sensor is a bipolar latch, meaning it switches its output state when the magnetic field passes certain thresholds, offering precise magnetic field detection.
2. Sensitivity and Range: It features a magnetic sensitivity range suitable for various applications, detecting both north and south magnetic poles effectively.
3. Output: The sensor provides a digital output, making it easy to interface with microcontrollers and other digital systems.
4. Supply Voltage: It operates on a wide supply voltage range, typically from 2.5V to 38V, which allows for flexibility in different power environments.
5. Low Power Consumption: Designed for efficiency, it has low power consumption, which is beneficial for battery-operated devices.
6. Operating Temperature Range: The sensor functions effectively across a broad temperature range, typically from -40°C to 125°C, suitable for harsh environments.
7. Package: It is available in a small SOT-23 package, allowing for compact design implementations.
These features make the DRV5013AGQDBZR suitable for applications like motor control, position sensing, and proximity detection.

Package

The DRV5013AGQDBZR is a Hall effect sensor from Texas Instruments, available in a small SOT-23-3 package. This package type is compact, making it suitable for space-constrained applications.

Pinout

The DRV5013AGQDBZR is a three-pin Hall effect sensor manufactured by Texas Instruments. It is designed to detect the presence and strength of a magnetic field. Here is the pin configuration and their functions:
1. VCC (Pin 1): This is the power supply pin. It is used to provide the necessary operating voltage to the sensor, typically ranging from 2.5V to 38V.
2. GND (Pin 2): This is the ground pin. It serves as the return path for the current flowing through the sensor and is connected to the ground of the power supply.
3. OUT (Pin 3): This is the output pin. The DRV5013 provides a digital output, which switches based on the magnetic field strength. When a magnetic field perpendicular to the sensor exceeds the operating point, the output transistor is driven low, and when it falls below the release point, it is driven high.
The DRV5013 is used in applications such as position sensing, motor control, and proximity detection due to its reliability and wide operating voltage range.

Manufacturer

The DRV5013AGQDBZR is manufactured by Texas Instruments, a global semiconductor company. Texas Instruments designs and produces a wide range of electronic components and semiconductor-based technologies. The company is recognized for its analog and embedded processing products, which are utilized in various applications across industrial, automotive, personal electronics, communications, and enterprise systems. Texas Instruments is known for its innovation in integrated circuits and is a major player in the semiconductor industry.

Application

The DRV5013AGQDBZR is a Hall-effect sensor used in various applications, including position sensing, speed detection, and proximity sensing. It is ideal for use in automotive systems, consumer electronics, industrial equipment, and home appliances. The sensor is often employed in detecting open/close positions in doors and lids, rotary encoders for motors, and gear tooth sensors for speed and direction in machinery. Its robust design and low power consumption make it suitable for battery-operated devices.

Equivalent

The DRV5013AGQDBZR is a Hall effect sensor from Texas Instruments. Equivalent products would include:
1. Allegro Microsystems A1101EUA-T
2. Melexis MLX90248
3. Honeywell SS495A
4. Infineon TLE4966G
These products offer similar functionalities, such as providing magnetic field detection used in position sensing applications. However, specific equivalence should be verified based on detailed specifications and application requirements.

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