DMN63D8LV-7

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DMN63D8LV-7

MOSFET 2N-CH 30V 0.26A SOT563

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規格

Supplier Diodes Incorporated
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V
Current-ContinuousDrain(Id)@25°C 260mA
RdsOn(Max)@IdVgs 2.8Ohm @ 250mA, 10V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 0.87nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 22pF @ 25V
Power-Max 450mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case SOT-563, SOT-666

概述

Description

DMN63D8LV-7 is a power MOSFET (N-channel) in the DMN63D8LV family, used for high‑efficiency switching in power electronics.
Key points:
- Function: enhancement-mode N‑channel MOSFET for switching/regulation tasks.
- Likely class: around 60V voltage rating with low on-resistance for good efficiency.
- Package: surface-mount, suitable for compact power designs; -7 denotes a specific package/revision (lead-free/temperature grade) in the family.
- Typical uses: DC‑DC converters, synchronous buck regulators, load switches, motor drivers, and polarity protection.
Notes:
- Exact electrical specs (Vds, Id, Rds(on), Qgs/Qgd, package type) vary by lot; always consult the official datasheet for the precise values.
- If you’re selecting or replacing this part, verify the package, footprint, and mechanicals, plus any automotive/temperature requirements.
Where to find details:
- Manufacturer datasheet (Diodes Inc. or the appropriate vendor’s page) and distributor catalogs.

Features

DMN63D8LV-7 is a N-channel enhancement-mode power MOSFET. Key features (typical, manufacturer-dependent):
- Voltage rating: about 60 V
- Very low on-state resistance (Rds(on)) for high efficiency (low conduction losses)
- Logic-level gate drive (Vgs can be driven at low voltages)
- Fast switching with low input capacitance
- Robust ruggedness (good avalanche/overload tolerance)
- Compact low-profile 7-pin LV package
- Suitable for DC-DC converters, synchronous rectification, motor drives, and high-side/low-side switching
Note: Exact values (Rds(on), Id rating, gate charge, packaging) vary by manufacturer—check the specific datasheet for precise numbers.

Package

SO-8 (8-pin small-outline) surface-mount package.

Pinout

- Pin count: 8 pins
- Function: Dual N-channel enhancement-mode power MOSFET in one package (two MOSFETs used for switching in power-management circuits).

Manufacturer

Manufacturer: Diodes Incorporated (DI).
What kind of company: A global semiconductor company that designs and manufactures discrete components, including diodes, MOSFETs (power/transistors), protection devices, and related analog and logic products for electronics applications.

Application

DMN63D8LV-7 is a low-voltage N-channel power MOSFET for fast-switching power electronics. Typical applications:
- DC-DC buck/boost regulators and point-of-load converters
- Motor/actuator driver circuits
- High-side/low-side switches in PMICs
- Solar/battery inverters and UPS systems
- Automotive and industrial power electronics
- Consumer electronics power rails

Equivalent

DMN63D8LV-7 is a 60 V N‑channel logic‑level MOSFET. Precise equivalents depend on package and key specs (VDS, ID, Rds(on), VGS(th)). Please provide VDSS, ID, Rds(on) target, VGS(th), and package (DPAK/TO‑252, etc.). I can then give exact cross‑references from TI, Infineon, Vishay, ON Semiconductor, etc.

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