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DMN3032LFDB-7
MOSFET 2N-CH 30V 6.2A UDFN2020-6
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- 製造商。 部分 #DMN3032LFDB-7
- 包 6-UDFN Exposed Pad
- 資料表 DMN3032LFDB-7 DataSheet
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規格
| Supplier | Diodes Incorporated |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 6.2A |
| RdsOn(Max)@IdVgs | 30mOhm @ 5.8A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 10.6nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 500pF @ 15V |
| Power-Max | 1W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-UDFN Exposed Pad |
概述
Description
DMN3032LFDB-7 is a dual N-channel enhancement-mode power MOSFET in a compact DB-7 package. It combines two low-Rds(on) MOSFETs in one device, making it suitable for high-efficiency switching in power-management circuits such as DC-DC converters, synchronous buck/boost stages, and load switching. The -7 suffix indicates a specific packaging/lead variant. Exact electrical ratings (Vds, Id, Rds(on), Qgs/Qgd), pinout, and thermal data are defined in the datasheet. For precise specs and recommended operating conditions, refer to the manufacturer’s or distributor’s DMN3032LFDB-7 datasheet.
Features
Here are the typical features of DMN3032LFDB-7 (dual N-channel MOSFETs):
- Dual N-channel enhancement-mode MOSFETs in a single compact package (DB-7/DFN style).
- VDS: 30 V rating.
- Very low RDS(on) per FET (typical a few milliohms at VGS ≈ 4.5 V).
- Logic-level gate drive (low VGS threshold, suitable for 2.5–4.5 V drive).
- High-speed switching with low gate charge (suitable for efficient DC-DC and synchronous rectification).
- Low parasitic inductance in the compact package; suitable for dense layouts.
- Integrated body diodes with good reverse-recovery characteristics.
- RoHS-compliant, lead-free (LF).
- Broad operating temp range (typical -40°C to +125°C) for power applications.
Ideal uses: synchronous buck regulators, load switches, reverse-current protection, and other compact power-switching circuits. For exact electrical numbers and package details, consult the official datasheet.
- Dual N-channel enhancement-mode MOSFETs in a single compact package (DB-7/DFN style).
- VDS: 30 V rating.
- Very low RDS(on) per FET (typical a few milliohms at VGS ≈ 4.5 V).
- Logic-level gate drive (low VGS threshold, suitable for 2.5–4.5 V drive).
- High-speed switching with low gate charge (suitable for efficient DC-DC and synchronous rectification).
- Low parasitic inductance in the compact package; suitable for dense layouts.
- Integrated body diodes with good reverse-recovery characteristics.
- RoHS-compliant, lead-free (LF).
- Broad operating temp range (typical -40°C to +125°C) for power applications.
Ideal uses: synchronous buck regulators, load switches, reverse-current protection, and other compact power-switching circuits. For exact electrical numbers and package details, consult the official datasheet.
Package
A 6-pin SON (2×2 mm) package (dual N-channel MOSFET).
Pinout
Pin count: 7 pins.
Function: DMN3032LFDB-7 is a dual N-channel MOSFET in a 7-pin package (lead-free). It contains two 30V, ~3.2A enhancement-mode N-channel MOSFETs intended for switching in power-management circuits (e.g., DC-DC converters).
Function: DMN3032LFDB-7 is a dual N-channel MOSFET in a 7-pin package (lead-free). It contains two 30V, ~3.2A enhancement-mode N-channel MOSFETs intended for switching in power-management circuits (e.g., DC-DC converters).
Manufacturer
Manufacturer: Diodes Incorporated.
Company type: A global semiconductor company that designs and manufactures diodes, transistors, MOSFETs, and other discrete/analog IC components.
Company type: A global semiconductor company that designs and manufactures diodes, transistors, MOSFETs, and other discrete/analog IC components.
Application
DMN3032LFDB-7 is a logic‑level N‑channel power MOSFET. Typical applications include: low‑voltage switching in buck/boost DC‑DC converters and synchronous rectification; load switches and power‑path protection in PMICs; reverse-polarity/short‑circuit protection; motor/actuator drivers; and battery‑management circuits in consumer and automotive electronics.
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