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DMN2004VK-7
MOSFET 2N-CH 20V 0.54A SOT-563
- 製造商
- 製造商。 部分 #DMN2004VK-7
- 包 SOT-563, SOT-666
- 資料表 DMN2004VK-7 DataSheet
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規格
| Supplier | Diodes Incorporated |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 540mA |
| RdsOn(Max)@IdVgs | 550mOhm @ 540mA, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| InputCapacitance(Ciss)(Max)@Vds | 150pF @ 16V |
| Power-Max | 250mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | SOT-563, SOT-666 |
概述
Description
DMN2004VK-7 is an N-channel enhancement-mode MOSFET used for power switching in SMT applications. It’s typically employed as a low-side or high-side switch in DC-DC converters, motor drivers, load switches, and related power-management circuits. Key characteristics to verify are the maximum drain-source voltage (Vds), continuous drain current (Id), and on-resistance (Rds(on)) at the drive gate voltage (Vgs), along with gate threshold and total gate charge (Qg). The exact ratings and package variant can vary by revision or supplier, so always consult the official datasheet for DMN2004VK-7 to confirm values, thermal characteristics, and mounting requirements. When selecting, ensure your supply voltage stays below Vds, your gate-drive voltage achieves the desired Rds(on), and adequate heat sinking or thermal management is planned. If you share the manufacturer or a datasheet link, I can pull out the specific numbers.
Features
- N-channel enhancement-mode MOSFET
- Vds rated around 30V with robust avalanche energy capability
- Id suitable for several amperes (typical up to ~8A)
- Very low Rds(on) for high-efficiency switching
- Logic-level gate drive (driveable from 3.3–4.5V)
- Fast switching with low gate charge (Qgs) and input capacitance
- Built with trench/silicon-optimized process for low loss
- Package: surface-mount DPAK/TO-252-3 (lead-free/RoHS)
- Applications: DC-DC converters, synchronous rectification, load switching
Note: for exact numbers (Vds, Id, Rds(on), Qg), please refer to the official DMN2004VK-7 datasheet.
- Vds rated around 30V with robust avalanche energy capability
- Id suitable for several amperes (typical up to ~8A)
- Very low Rds(on) for high-efficiency switching
- Logic-level gate drive (driveable from 3.3–4.5V)
- Fast switching with low gate charge (Qgs) and input capacitance
- Built with trench/silicon-optimized process for low loss
- Package: surface-mount DPAK/TO-252-3 (lead-free/RoHS)
- Applications: DC-DC converters, synchronous rectification, load switching
Note: for exact numbers (Vds, Id, Rds(on), Qg), please refer to the official DMN2004VK-7 datasheet.
Package
DMN2004VK-7 is in a D2PAK (TO-263) surface-mount package.
Pinout
- Pin count: 8 pins
- Function: Dual N-channel enhancement-mode power MOSFET pair in a single package (used as high-side/low-side switching devices in DC-DC converters and other power-switching applications).
- Function: Dual N-channel enhancement-mode power MOSFET pair in a single package (used as high-side/low-side switching devices in DC-DC converters and other power-switching applications).
Manufacturer
Manufacturer: Diodes Incorporated.
What kind of company: A global semiconductor company that designs and manufactures diodes, MOSFETs, and other discrete semiconductor components.
What kind of company: A global semiconductor company that designs and manufactures diodes, MOSFETs, and other discrete semiconductor components.
Application
DMN2004VK-7 is an N-channel enhancement MOSFET used as a power switch. Typical applications include: high-efficiency DC-DC converters and switching regulators (buck/boost), synchronous rectification, power-path/load switching and hot‑swap protection, automotive/industrial control circuits, motor driver stages (low- or high-side), and general high-current switching in portable or battery-powered electronics.
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