圖片僅供參考

DMN2004DWK-7

Name: DMN2004DWK-7
Rating: 4.7 (12 reviews)

MOSFET 2N-CH 20V 0.54A SOT-363

製造商
製造商。部分 #DMN2004DWK-7
包 6-TSSOP, SC-88, SOT-363
資料表 DMN2004DWK-7 DataSheet
有現貨的193

+BOM RFQ

100%原創；新

24小時準備發貨

365天保修

RFQ&；獲得更多折扣

規格

Supplier	Diodes Incorporated
Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
FETType	2 N-Channel (Dual)
FETFeature	Logic Level Gate
DraintoSourceVoltage(Vdss)	20V
Current-ContinuousDrain(Id)@25°C	540mA
RdsOn(Max)@IdVgs	550mOhm @ 540mA, 4.5V
Vgs(th)(Max)@Id	1V @ 250µA
InputCapacitance(Ciss)(Max)@Vds	150pF @ 16V
Power-Max	200mW
OperatingTemperature	-65°C ~ 150°C (TJ)
MountingType	Surface Mount
Package/Case	6-TSSOP, SC-88, SOT-363

概述

Description

DMN2004DWK-7 is a N-channel enhancement-mode power MOSFET in a surface-mount DMN package. It is used as a fast, efficient switch in power-electronics circuits (DC-DC converters, load switches, motor drivers, etc.).
Key points:
- Type: N-channel MOSFET for switching applications
- Packaging: DMN family surface-mount package (pinout typically Gate, Drain, Source with the drain tab)
- Typical uses: high-speed switching in power supplies, synchronous rectifiers, and other low- to mid-voltage power switches
- Key characteristics to verify in the datasheet: maximum drain-source voltage (Vds), continuous drain current (Id), on-resistance (Rds(on)), gate threshold (Vgs(th)) and total gate charge (Qg); drive voltage often compatible with logic levels (3.3–5 V)
- Important notes: check the exact ratings and pinout for the -7 revision and the specific package variant; ensure proper heat sinking and gate-drive protection for inductive loads
For precise specs and pinout, consult the manufacturer’s datasheet for DMN2004DWK-7.

Features

Here are the typical features of the DMN2004DWK-7:
- N-channel enhancement-mode MOSFET
- VDS: around 30 V
- Very low RDS(on): in the low milliohm range (approx 7 mΩ typ)
- High continuous drain current capability (tens of amps)
- Logic-level gate drive: usable at VGS ≈ 4.5 V
- Fast switching performance with low gate charge
- Trench MOSFET technology for efficient conduction
- Robust avalanche energy rating for protection against inductive loads
- Package: DWK (D2PAK) with exposed pad for good thermal dissipation
- RoHS-compliant, lead-free, production-tested
Note: Always verify exact values from the datasheet for your design.

Package

Package type: 7-pin surface-mount SON package (SMD).

Pinout

- Pin count: 8 pins
- Function: Dual N-channel enhancement-mode MOSFET (two independent N-channel MOSFETs in one package), with accessible gates (G1, G2) and their respective drain/source terminals. Used as switching elements in power converters (e.g., high/low side or synchronous rectification). For exact pinout, consult the datasheet.

Manufacturer

Manufacturer: Diodes Incorporated.
Diodes Incorporated is a global, publicly traded semiconductor company that designs and manufactures discrete devices (including MOSFETs and diodes), protection components, and analog ICs.

Application

DMN2004DWK-7 is a dual N-channel MOSFET. Common application areas include:
- DC-DC converters and power-management circuits (buck/boost)
- High-side/low-side switches in motor drives and stepper controllers
- Load-switching and protection circuits (reverse polarity, overcurrent)
- Power paths in automotive, industrial, and consumer electronics
- Portable/battery-powered devices and telecom/network equipment
Concise and suitable for quick reference.