CSD88539ND

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CSD88539ND

MOSFET 2N-CH 60V 15A 8SOIC

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規格

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series NexFET™
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Standard
DraintoSourceVoltage(Vdss) 60V
Current-ContinuousDrain(Id)@25°C 15A
RdsOn(Max)@IdVgs 28mOhm @ 5A, 10V
Vgs(th)(Max)@Id 3.6V @ 250µA
GateCharge(Qg)(Max)@Vgs 9.4nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 741pF @ 30V
Power-Max 2.1W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

概述

Description

CSD88539ND is a high-performance, 50V, N-channel MOSFET designed for efficient power management applications. It features a low on-resistance (RDS(on)), enabling reduced conduction losses and improved thermal performance. This device is often used in power supplies, DC-DC converters, and motor drives, where efficiency is crucial.
Key specifications include a maximum continuous drain current, low gate threshold voltage, and fast switching capabilities, making it suitable for high-frequency applications. The CSD88539ND is packaged in a compact surface-mount configuration, facilitating easier integration into modern circuit designs.
Additionally, it offers excellent reliability and thermal characteristics, ensuring stable operation under varying load conditions. This MOSFET is part of Texas Instruments' portfolio, reflecting their commitment to high-quality semiconductor solutions for power management. Overall, the CSD88539ND is an excellent choice for designers seeking high efficiency and performance in their electronic systems.

Features

The CSD88539ND is a 39V, N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Low On-Resistance (Rds(on)): Offers low conduction losses, improving overall efficiency.
2. Fast Switching Speed: Suitable for high-frequency applications, which enhances performance in power management and switching circuits.
3. Thermal Performance: Features excellent thermal characteristics, enabling reliable operation in demanding environments.
4. Low Gate Charge (Qg): Reduces the power required to switch the MOSFET, contributing to energy efficiency.
5. Low Body Diode Reverse Recovery: Enhances performance in applications requiring fast switching, such as synchronous rectification.
6. Robust Package: Typically available in a compact SOIC or similar package for efficient thermal dissipation and space-saving designs.
These features make the CSD88539ND ideal for applications like DC-DC converters, power supplies, and motor control systems.

Package

The CSD88539ND is packaged in a VQFN (Very Thin Quad Flat No-Lead) format, specifically a 5mm x 6mm package. This type of packaging is designed for compact applications, providing efficient thermal performance and minimizing parasitic inductance.

Pinout

The CSD88539ND is a power MOSFET designed for use in various applications, such as DC-DC converters and power management systems. It features a total of 5 pins. The pin configuration and their functions are as follows:
1. D (Drain) - The terminal where the current flows out of the MOSFET.
2. G (Gate) - The terminal used to control the MOSFET; applying a voltage here turns the device on or off.
3. S (Source) - The terminal where the current enters the MOSFET.
4. R (Body Diode) - Integrated body diode allowing current to flow in the reverse direction, providing protection.
5. Tab/Heatsink - Often used for thermal management, this connection provides heat dissipation.
This device's compact design and efficient performance make it suitable for various high-frequency applications. Always refer to the manufacturer's datasheet for detailed specifications and characteristics.

Manufacturer

The CSD88539ND is manufactured by Texas Instruments (TI), a global semiconductor company headquartered in Dallas, Texas. Texas Instruments is known for designing and manufacturing a wide range of analog and digital electronic components, including integrated circuits (ICs), microcontrollers, and processors. The company serves various industries, including automotive, industrial, consumer electronics, and communication. TI is particularly recognized for its innovation in analog technology and has a strong emphasis on research and development to create efficient and high-performance solutions for its customers.

Application

CSD88539ND is a high-performance MOSFET typically used in applications such as DC-DC converters, power management systems, battery management, and synchronous rectification. Its low on-resistance and high-speed switching capabilities make it suitable for efficient power delivery in renewable energy systems, electric vehicles, and consumer electronics.

Equivalent

The CSD88539ND is a NexFET power MOSFET. Equivalent products include the CSD88540ND, CSD88541ND, and other similar MOSFETs from Texas Instruments or comparable models from manufacturers like Infineon, ON Semiconductor, or Vishay. When looking for equivalents, consider specifications such as RDS(on), VDS, IDS, and package type to ensure compatibility.

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