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CSD87333Q3D

Name: CSD87333Q3D
Rating: 4.7 (12 reviews)

MOSFET 2N-CH 30V 15A 8SON

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製造商。部分 #CSD87333Q3D
包 8-PowerTDFN
資料表 CSD87333Q3D DataSheet
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規格

Supplier	Texas Instruments
Package	Tape & Reel (TR),Cut Tape (CT)
Series	NexFET™
ProductStatus	Active
FETType	2 N-Channel (Dual) Asymmetrical
FETFeature	Logic Level Gate, 5V Drive
DraintoSourceVoltage(Vdss)	30V
Current-ContinuousDrain(Id)@25°C	15A
RdsOn(Max)@IdVgs	14.3mOhm @ 4A, 8V
Vgs(th)(Max)@Id	1.2V @ 250µA
GateCharge(Qg)(Max)@Vgs	4.6nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds	662pF @ 15V
Power-Max	6W
OperatingTemperature	125°C (TJ)
MountingType	Surface Mount
Package/Case	8-PowerTDFN

概述

Description

CSD87333Q3D is TI’s NexFET dual N-channel power MOSFET in a 3x3 mm QFN (Q3D) package, automotive-qualified for harsh environments. It contains two N-channel FETs rated for roughly 30 V with low on-resistance (typical around tens of milliohms per FET) and fast switching, optimized for high-efficiency switching regulators.
Key points:
- Package: QFN-3x3 with exposed pad for heat dissipation
- Rating: about 30 V, dual N-channel devices
- Resistance: typically tens of mΩ per FET
- Features: low gate charge, suitable for synchronous buck/converter use
- Applications: automotive and industrial DC-DC converters, power management, half-bridge topologies
- Use: connect as a high-side/low-side pair per datasheet; ensure proper gate drive voltage and thermal management
For exact electrical specs, recommended operating conditions, and PCB footprint, consult the TI datasheet.

Features

Here are the typical features of TI CSD87333Q3D (Automotive-grade) at a glance:
- Automotive-grade, Q3D—AEC-Q100 compliant package
- Synchronous buck regulator with integrated high-side and low-side MOSFETs
- Wide input voltage range (suitable for 12/24V automotive rails)
- Adjustable output via external feedback (and fixed-output variants may exist)
- Soft-start and enable pin; power-good/reset signaling
- Current-mode control with PWM operation
- Protections: overcurrent/short-circuit protection, thermal shutdown, undervoltage lockout
- High efficiency благодаря synchronous topology
- Small 3×3 mm QFN package with exposed pad for thermal dissipation
Note: exact output voltage options, switching frequency, and pinout may vary by specific variant. For precise specs, consult the TI datasheet for CSD87333Q3D.

Package

CSD87333Q3D is in an 8‑pin QFN package (3.0 x 3.0 mm) with an exposed pad.

Pinout

Pin count: 16 pins in a 3.0 × 3.0 mm QFN package, plus an exposed pad (center pad).
Function: Dual N-channel MOSFET pair intended for power switching (high-side and low-side) in synchronous buck converters. Each FET has its own gate; drains are commonly tied to the package center pad (and/or dedicated drain pins per package variant), with sources connected to the respective nodes. For exact pinout and wiring, see the CSD87333Q3D datasheet.

Manufacturer

- Manufacturer: Texas Instruments (TI)
- What kind of company: American multinational semiconductor company that designs and manufactures analog, embedded processing, and other integrated circuits and components.

Application

Applications of CSD87333Q3D:
- Synchronous buck DC-DC converter power stage for VRMs in CPUs/GPUs/FPGAs/SoCs
- Automotive 12V/24V power networks as load-switch and PWM switching devices
- Motor control for BLDC/PMSM drives
- High-efficiency switching regulators in telecom and industrial equipment
- Point-of-load power management in battery-powered devices