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CSD86350Q5D
MOSFET 2N-CH 25V 40A 8SON
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- 資料表 CSD86350Q5D DataSheet
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | 2 N-Channel (Half Bridge) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 25V |
| Current-ContinuousDrain(Id)@25°C | 40A |
| RdsOn(Max)@IdVgs | 6mOhm @ 20A, 8V |
| Vgs(th)(Max)@Id | 2.1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 10.7nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 1870pF @ 12.5V |
| Power-Max | 13W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-PowerLDFN |
概述
Description
CSD86350Q5D is a high-performance power management IC (Integrated Circuit) designed for DC-DC conversion applications. It features a dual-channel, synchronous buck controller that efficiently regulates voltage and provides power for various electronic devices. The device supports a wide input voltage range and offers advanced protection features such as overcurrent and thermal shutdown, ensuring reliability and safety in operation. Its compact size makes it suitable for space-constrained applications, while its high switching frequency allows for smaller passive component sizes, improving overall system efficiency. The CSD86350Q5D is typically used in applications like consumer electronics, telecommunications, and industrial equipment. It is appreciated for its ease of use, versatility, and robust performance in demanding conditions.
Features
The CSD86350Q5D is a high-performance power MOSFET designed for various applications, particularly suitable for DC-DC converters and power management solutions. Key features include:
1. Low On-Resistance (Rds(on)): This ensures efficient power delivery and minimal heat generation, enhancing overall system efficiency.
2. High Voltage Rating: Typically rated for 30V, it allows for usage in a wide range of power applications.
3. Low Gate Charge (Qg): This feature enables fast switching, reducing power loss and improving efficiency in high-frequency applications.
4. Compact Package: Usually available in a 5x6 mm QFN or similar package, it saves board space while providing robust thermal performance.
5. High Switching Speed: Suitable for synchronous buck converters and other fast-switching designs.
6. Thermal Resistance: Designed for optimal heat dissipation, contributing to reliability and prolonged lifespan.
Overall, the CSD86350Q5D is ideal for modern power electronics, providing a balance of efficiency, performance, and compact design.
1. Low On-Resistance (Rds(on)): This ensures efficient power delivery and minimal heat generation, enhancing overall system efficiency.
2. High Voltage Rating: Typically rated for 30V, it allows for usage in a wide range of power applications.
3. Low Gate Charge (Qg): This feature enables fast switching, reducing power loss and improving efficiency in high-frequency applications.
4. Compact Package: Usually available in a 5x6 mm QFN or similar package, it saves board space while providing robust thermal performance.
5. High Switching Speed: Suitable for synchronous buck converters and other fast-switching designs.
6. Thermal Resistance: Designed for optimal heat dissipation, contributing to reliability and prolonged lifespan.
Overall, the CSD86350Q5D is ideal for modern power electronics, providing a balance of efficiency, performance, and compact design.
Package
The CSD86350Q5D is packaged in a QFN (Quad Flat No-lead) format, specifically in a 5x6 mm, 32-pin package. This type of packaging provides a compact size and efficient thermal performance, suitable for various applications in power management.
Pinout
The CSD86350Q5D is a Power MOSFET from Texas Instruments with a total of 5 pins. The pin functions are as follows:
1. G - Gate: Controls the switching of the MOSFET.
2. D - Drain: The output terminal where the load is connected.
3. S - Source: The terminal connected to ground or the lower potential in the circuit.
This device is designed for high-efficiency power management applications, featuring low on-resistance and fast switching capabilities. It is commonly used in DC-DC converters and other power conversion applications.
1. G - Gate: Controls the switching of the MOSFET.
2. D - Drain: The output terminal where the load is connected.
3. S - Source: The terminal connected to ground or the lower potential in the circuit.
This device is designed for high-efficiency power management applications, featuring low on-resistance and fast switching capabilities. It is commonly used in DC-DC converters and other power conversion applications.
Manufacturer
The CSD86350Q5D is manufactured by Texas Instruments (TI), a well-known American technology company. Texas Instruments specializes in designing and manufacturing semiconductors and various electronics, including analog and digital processing chips. The company is recognized for its innovations in the fields of embedded processing and analog technology, serving a wide range of industries such as automotive, industrial, communications, and consumer electronics. TI is particularly noted for its efforts in developing solutions that enable efficient power management and signal processing in electronic devices.
Application
The CSD86350Q5D is a high-performance power MOSFET primarily used in applications such as DC-DC converters, power management systems, and battery management in electric vehicles. Its efficient switching capabilities make it suitable for use in server power supplies, telecommunications, and renewable energy systems like solar inverters. Additionally, it can be found in consumer electronics for improved energy efficiency.
Equivalent
The CSD86350Q5D is a power stage integrated circuit typically used in DC-DC converters. Equivalent products include:
1. Texas Instruments CSD86350R5D
2. Infineon IRF7749
3. ON Semiconductor NCP81239
4. Vishay Si8234
Always verify compatibility with your specific application requirements before substitution.
1. Texas Instruments CSD86350R5D
2. Infineon IRF7749
3. ON Semiconductor NCP81239
4. Vishay Si8234
Always verify compatibility with your specific application requirements before substitution.
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