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CSD25481F4
MOSFET P-CH 20V 2.5A 3PICOSTAR
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- 資料表 CSD25481F4 DataSheet
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規格
| Supplier | Texas Instruments |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 2.5A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 88mOhm @ 500mA, 8V |
| Vgs(th)(Max)@Id | 1.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 0.913 nC @ 4.5 V |
| Vgs(Max) | -12V |
| InputCapacitance(Ciss)(Max)@Vds | 189 pF @ 10 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 3-PICOSTAR |
概述
Description
CSD25481F4 appears to be a specific code or identifier, possibly related to a course, project, or product. Without more context, it’s challenging to provide a detailed introduction. If this code pertains to an academic course, it may cover topics relevant to a particular field, such as computer science, data analysis, or engineering principles. If it’s a product code, it might relate to a specific technology or software application.
For a precise overview, please provide additional context or clarify the area that CSD25481F4 relates to. This will enable a more tailored and informative response.
For a precise overview, please provide additional context or clarify the area that CSD25481F4 relates to. This will enable a more tailored and informative response.
Features
The CSD25481F4 is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 40V.
2. Current Rating: The maximum continuous drain current (I_D) is around 60A, making it suitable for high current applications.
3. R_DS(on): It has a low on-resistance, typically around 4.8 mΩ at V_GS of 10V, which enhances efficiency by reducing power losses during operation.
4. Fast Switching: The device is optimized for fast switching speeds, ideal for applications in power management, converters, and motor control.
5. Package Type: It comes in a DPAK package, which ensures efficient heat dissipation.
6. Thermal Performance: With a high thermal conductivity, it can operate effectively in demanding environments.
Overall, the CSD25481F4 is suitable for applications like DC-DC converters, inverters, and other areas requiring reliable performance at high power levels.
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 40V.
2. Current Rating: The maximum continuous drain current (I_D) is around 60A, making it suitable for high current applications.
3. R_DS(on): It has a low on-resistance, typically around 4.8 mΩ at V_GS of 10V, which enhances efficiency by reducing power losses during operation.
4. Fast Switching: The device is optimized for fast switching speeds, ideal for applications in power management, converters, and motor control.
5. Package Type: It comes in a DPAK package, which ensures efficient heat dissipation.
6. Thermal Performance: With a high thermal conductivity, it can operate effectively in demanding environments.
Overall, the CSD25481F4 is suitable for applications like DC-DC converters, inverters, and other areas requiring reliable performance at high power levels.
Package
The CSD25481F4 is packaged in a 4mm x 4mm QFN (Quad Flat No-lead) format.
Pinout
The CSD25481F4 is a power MOSFET with a total of 8 pins. Its main functions include:
1. D (Drain): Pins 1 and 3 serve the drain connection.
2. G (Gate): Pin 2 is for the gate connection which controls the switching of the MOSFET.
3. S (Source): Pins 4, 5, 6, and 7 are for the source connection.
The pinout allows for efficient thermal management and electrical performance in various applications, including DC-DC converters and power management systems. The device is designed for low on-resistance and fast switching speeds, making it suitable for high-efficiency applications.
1. D (Drain): Pins 1 and 3 serve the drain connection.
2. G (Gate): Pin 2 is for the gate connection which controls the switching of the MOSFET.
3. S (Source): Pins 4, 5, 6, and 7 are for the source connection.
The pinout allows for efficient thermal management and electrical performance in various applications, including DC-DC converters and power management systems. The device is designed for low on-resistance and fast switching speeds, making it suitable for high-efficiency applications.
Manufacturer
The CSD25481F4 is manufactured by Texas Instruments (TI). Texas Instruments is an American technology company headquartered in Dallas, Texas, renowned for its design and production of semiconductors and various electronics. Founded in 1930, TI is a leader in analog and embedded processing, providing a wide range of products including microcontrollers, digital signal processors, and power management solutions. The company primarily serves sectors such as automotive, industrial, communications, and consumer electronics. TI is well-regarded for its innovations in electronics and commitment to development in the semiconductor industry.
Application
CSD25481F4 is a Texas Instruments power MOSFET designed for applications in DC-DC converters, power management systems, battery chargers, and electric vehicles. Its features include low on-resistance and fast switching capabilities, making it suitable for high-efficiency power supplies, motor drives, and renewable energy systems.
Equivalent
The CSD25481F4 is a low-side MOSFET driver optimized for power management applications. Equivalent products include:
1. CSD25480F4
2. CSD25482F4
3. NTD5869NL
4. BSS123
5. IRLZ44N
Always verify specifications and performance to ensure compatibility for your specific application.
1. CSD25480F4
2. CSD25482F4
3. NTD5869NL
4. BSS123
5. IRLZ44N
Always verify specifications and performance to ensure compatibility for your specific application.
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