CSD19535KCS

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CSD19535KCS

MOSFET N-CH 100V 150A TO220-3

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規格

Supplier Rochester Electronics, LLC,Texas Instruments
Package Bulk,Tube
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 150A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 3.6mOhm @ 100A, 10V
Vgs(th)(Max)@Id 3.4V @ 250µA
GateCharge(Qg)(Max)@Vgs 101 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 7930 pF @ 50 V
PowerDissipation(Max) 300W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220-3

概述

Description

CSD19535KCS is a Texas Instruments NexFET Power MOSFET (N-channel) used for high‑efficiency switching power applications. It leverages TI’s NexFET process to deliver low on‑resistance (Rds(on)) and low gate charge, enabling higher current handling with reduced gate drive energy. The device is intended for DC‑DC converters, switching regulators, motor drivers, and automotive/industrial power circuits where fast switching and good thermal performance are important. It is available in surface‑mount packages and is typically used as either a low‑side or high‑side switch in synchronous buck topologies; exact pinout and package options are specified in the datasheet. Design notes: ensure the gate drive voltage stays within Vgs ratings, provide adequate heatsinking, and follow TI’s recommended gate‑drive and PCB layout guidelines. For precise electrical ratings (Vds, Id, Rds(on), gate charge, thermal limits, and packaging), consult the CSD19535KCS datasheet.

Features

CSD19535KCS is an N-channel enhancement-mode power MOSFET (NexFET). Key features typically include:
- 30V (class) Vds rating, optimized for low-voltage power applications
- Very low on-resistance (Rds(on)) for high-efficiency switching
- Low gate charge and input capacitance for fast drive and reduced PWM losses
- High pulsed current capability and robust Safe Operating Area (SOA)
- Rugged avalanche energy and good body-diode performance for protection in switching regulators
- Suitable for synchronous buck/step-down converters and other power-switching topologies
- RoHS-compliant and available in common power-packaged options
Note: exact electrical specs (Rds(on), Id, gate charge) vary by lot and package; consult the datasheet for precise numbers.

Package

CSD19535KCS uses TI’s KCS package: an 8-pin Small Outline No-Lead (SON) package, about 2.9 × 3.0 mm (commonly called VSON-8).

Pinout

- Pin count: 8 pins (VSON-8 package) with an exposed pad.
- Function: Dual N-channel NexFET power MOSFET in one package (two N‑channel MOSFETs, typically with a common drain), used for high-efficiency switching in DC-DC converters (e.g., synchronous buck regulators).

Manufacturer

- Manufacturer: Texas Instruments (TI).
- What kind of company: An American multinational semiconductor company that designs and manufactures a broad range of integrated circuits and analog/embedded processing products (including power MOSFETs and other ICs).

Application

Applications: 30-V N-channel NexFET MOSFETs for high-efficiency switching in power-management circuits, including DC-DC converters (buck/boost/SEPIC) and synchronous rectification, load switches in point-of-load rails, battery-powered devices, notebooks/tablets, and other portable consumer electronics.

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