圖片僅供參考
CSD19532Q5BT
MOSFET N-CH 100V 100A 8VSON
- 製造商
- 製造商。 部分 #CSD19532Q5BT
- 包
- 資料表
- 有現貨的2834
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Series | NexFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 3.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4810 pF @ 50 V |
| Power Dissipation (Max) | 3.1W (Ta), 195W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSON-CLIP (5x6) |
| Package / Case | 8-PowerTDFN |
| Base Product Number | CSD19532 |
概述
Description
CSD19532Q5BT is a high-performance, integrated power stage device designed for DC-DC conversion applications, particularly suitable for synchronous buck converters. It combines a high-side and low-side MOSFET in a single package, optimizing efficiency and thermal performance. The device features a wide input voltage range, high switching frequency, and low RDS(on), which reduces conduction losses.
It's designed for applications that demand high efficiency and power density, such as in computing, automotive, and industrial systems. The CSD19532Q5BT supports various control schemes, including voltage mode and current mode, allowing for versatile implementation in different designs. With its compact footprint and robust thermal characteristics, it is well-suited for modern power management solutions.
Overall, the CSD19532Q5BT provides engineers with an effective solution for improving the efficiency and performance of power supply designs.
It's designed for applications that demand high efficiency and power density, such as in computing, automotive, and industrial systems. The CSD19532Q5BT supports various control schemes, including voltage mode and current mode, allowing for versatile implementation in different designs. With its compact footprint and robust thermal characteristics, it is well-suited for modern power management solutions.
Overall, the CSD19532Q5BT provides engineers with an effective solution for improving the efficiency and performance of power supply designs.
Features
The CSD19532Q5BT is a high-performance N-channel MOSFET designed for power management applications. Its key features include:
1. Voltage Rating: It typically supports high voltage up to 30V.
2. RDS(on): Offers low on-resistance (around 5.5 mΩ), which enhances efficiency and reduces power loss during operation.
3. Current Handling: Capable of handling significant continuous current, making it suitable for various power applications.
4. Fast Switching Speed: Enables efficient operation in high-frequency applications, reducing switching losses.
5. Thermal Performance: Designed with robust thermal characteristics, allowing for effective heat dissipation.
6. Packaging: Available in a compact QFN package, facilitating space-saving designs in electronic circuits.
7. Applications: Ideal for DC-DC converters, motor drives, and battery management systems.
These features make the CSD19532Q5BT suitable for demanding applications requiring efficiency, reliability, and compact design.
1. Voltage Rating: It typically supports high voltage up to 30V.
2. RDS(on): Offers low on-resistance (around 5.5 mΩ), which enhances efficiency and reduces power loss during operation.
3. Current Handling: Capable of handling significant continuous current, making it suitable for various power applications.
4. Fast Switching Speed: Enables efficient operation in high-frequency applications, reducing switching losses.
5. Thermal Performance: Designed with robust thermal characteristics, allowing for effective heat dissipation.
6. Packaging: Available in a compact QFN package, facilitating space-saving designs in electronic circuits.
7. Applications: Ideal for DC-DC converters, motor drives, and battery management systems.
These features make the CSD19532Q5BT suitable for demanding applications requiring efficiency, reliability, and compact design.
Package
The CSD19532Q5BT is packaged in a QFN (Quad Flat No-lead) format, specifically a 5x6 mm size. This package type provides efficient thermal performance and is designed for surface-mount applications, making it suitable for various power management and switching applications.
Pinout
The CSD19532Q5BT is a N-channel MOSFET from Texas Instruments, specifically designed for power management applications. It features a total of 5 pins. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's ON/OFF states.
2. Drain (D) - The terminal through which the current exits the MOSFET.
3. Source (S) - The terminal through which the current enters the MOSFET.
4. Body/Source (B/S) - Often internally connected to the source, providing a path for current flow.
5. Thermal Pad (TP) - Used for heat dissipation; not a pin in the traditional sense but offers a thermal management option.
The device is notable for its low R_DS(on) and high-speed operation, making it suitable for applications in DC-DC converters, power management, and other high-efficiency designs.
1. Gate (G) - Controls the MOSFET's ON/OFF states.
2. Drain (D) - The terminal through which the current exits the MOSFET.
3. Source (S) - The terminal through which the current enters the MOSFET.
4. Body/Source (B/S) - Often internally connected to the source, providing a path for current flow.
5. Thermal Pad (TP) - Used for heat dissipation; not a pin in the traditional sense but offers a thermal management option.
The device is notable for its low R_DS(on) and high-speed operation, making it suitable for applications in DC-DC converters, power management, and other high-efficiency designs.
Manufacturer
The manufacturer of the CSD19532Q5BT is Texas Instruments (TI). Texas Instruments is a multinational technology company based in the United States, primarily known for designing and manufacturing semiconductors and various electronics components. Founded in 1930, TI operates in the fields of analog electronics, embedded processors, and digital signal processing, among others. The company serves a wide range of industries, including automotive, industrial, communications, and consumer electronics, and is recognized for its innovation and contribution to the semiconductor market.
Application
The CSD19532Q5BT is a power MOSFET designed for high-efficiency applications. Its primary application areas include DC-DC converters, power management systems, and battery chargers. It is commonly used in power supplies for servers, telecommunications, and industrial equipment due to its low on-resistance and fast switching capabilities, which enhance performance in high-frequency operations.
Equivalent
The CSD19532Q5BT is a high-performance N-channel MOSFET typically used in power applications. Equivalent products include the Infineon BSC012N08NS3, ON Semiconductor NTMFS5C628NL, and the Vishay SiR404DP. When selecting an equivalent, consider parameters such as RDS(on), VDS, ID, and package type to ensure compatibility with your specific application. Always verify the datasheets for detailed specifications.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25L3233FM1I-08Q
Macronix
-
MX25V1635FZNI
Macronix
-
MX29F400CBTI-70G
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V5126FM1I
Macronix
-
MX25V16066M1I02
Macronix
-
MX25V16066M2I02
Macronix
-
MX25L8035EM2I-10G
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25L6433FM2I-08G
Macronix
-
MX25L12833FM2I-10..
Macronix
-
MX25U25645GXDI00
Macronix