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CSD19532Q5B
MOSFET N-CH 100V 100A 8VSON
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 4.9mOhm @ 17A, 10V |
| Vgs(th)(Max)@Id | 3.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 62 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4810 pF @ 50 V |
| PowerDissipation(Max) | 3.1W (Ta), 195W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSON-CLIP (5x6) |
概述
Description
CSD19532Q5B is a high-performance, low-resistance power MOSFET designed for various applications, including power management and conversion systems. It features advanced technology that minimizes on-resistance, thus enhancing efficiency and thermal performance. The device is suitable for use in DC-DC converters, motor drives, and other power-related applications where efficiency is critical.
With a maximum drain-source voltage (Vds) rating and high current handling capabilities, CSD19532Q5B is ideal for demanding power environments. Its efficient switching characteristics contribute to reduced energy losses, making it a preferred choice for designers aiming to improve the overall performance of their systems.
The package design also facilitates thermal dissipation, further enhancing its reliability in operation. Overall, CSD19532Q5B is a robust solution for engineers looking to optimize power performance in compact and efficient electronic designs.
With a maximum drain-source voltage (Vds) rating and high current handling capabilities, CSD19532Q5B is ideal for demanding power environments. Its efficient switching characteristics contribute to reduced energy losses, making it a preferred choice for designers aiming to improve the overall performance of their systems.
The package design also facilitates thermal dissipation, further enhancing its reliability in operation. Overall, CSD19532Q5B is a robust solution for engineers looking to optimize power performance in compact and efficient electronic designs.
Features
The CSD19532Q5B is a high-performance N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 40V.
2. Current Handling: The device can handle continuous drain current (ID) of up to 95A, making it suitable for high-power applications.
3. RDS(on): It offers a low on-resistance (RDS(on)) of around 3.2 mOhm, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) is low, enabling efficient switching at lower gate drive voltages.
5. Package Type: It comes in a compact DPAK package, facilitating easy PCB layout and thermal performance.
6. Fast Switching: The device supports fast switching capabilities, which is critical for applications like DC-DC converters and motor drives.
7. Thermal Performance: Designed to handle significant power dissipation, it includes features for improved thermal management.
Overall, the CSD19532Q5B is ideal for automotive, industrial, and consumer electronics applications requiring efficient power conversion.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 40V.
2. Current Handling: The device can handle continuous drain current (ID) of up to 95A, making it suitable for high-power applications.
3. RDS(on): It offers a low on-resistance (RDS(on)) of around 3.2 mOhm, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) is low, enabling efficient switching at lower gate drive voltages.
5. Package Type: It comes in a compact DPAK package, facilitating easy PCB layout and thermal performance.
6. Fast Switching: The device supports fast switching capabilities, which is critical for applications like DC-DC converters and motor drives.
7. Thermal Performance: Designed to handle significant power dissipation, it includes features for improved thermal management.
Overall, the CSD19532Q5B is ideal for automotive, industrial, and consumer electronics applications requiring efficient power conversion.
Package
The CSD19532Q5B is packaged in a DPAK (also known as TO-252) form factor. This package type is designed for efficient thermal performance and is commonly used for power applications.
Pinout
The CSD19532Q5B is a Power MOSFET with a pin count of 5. The function of each pin is as follows:
1. Gate (G): Controls the switching of the MOSFET; when a voltage is applied, it turns on the device.
2. Drain (D): The terminal through which the main current flows when the MOSFET is turned on.
3. Source (S): The terminal that connects to the ground or the negative side of the load.
4. Body Diode: Internal to the MOSFET, it allows current to flow in the reverse direction when the MOSFET is off, providing protection against inductive kickback.
5. Thermal Pad: Used for heat dissipation; it is not a pin but serves to improve thermal management when soldered to a PCB.
This MOSFET is used in applications such as DC-DC converters, motor drives, and other power management solutions. Always refer to the manufacturer's datasheet for detailed specifications and usage guidelines.
1. Gate (G): Controls the switching of the MOSFET; when a voltage is applied, it turns on the device.
2. Drain (D): The terminal through which the main current flows when the MOSFET is turned on.
3. Source (S): The terminal that connects to the ground or the negative side of the load.
4. Body Diode: Internal to the MOSFET, it allows current to flow in the reverse direction when the MOSFET is off, providing protection against inductive kickback.
5. Thermal Pad: Used for heat dissipation; it is not a pin but serves to improve thermal management when soldered to a PCB.
This MOSFET is used in applications such as DC-DC converters, motor drives, and other power management solutions. Always refer to the manufacturer's datasheet for detailed specifications and usage guidelines.
Manufacturer
The CSD19532Q5B is manufactured by Texas Instruments (TI), a prominent American technology company. Texas Instruments is known for designing and manufacturing semiconductors and various integrated circuits, which are widely used in electronics and communications equipment. Founded in 1930, the company has a strong focus on innovation and offers a diverse range of products, including analog chips, embedded processors, and digital signal processors. TI serves multiple industries such as automotive, industrial, communications, and consumer electronics, making it a key player in the global semiconductor market.
Application
The CSD19532Q5B is a high-performance N-channel MOSFET primarily used in power management applications, including DC-DC converters, synchronous rectification, and power supply circuits. Its low RDS(on) and high-speed switching capabilities make it suitable for applications in computer power supplies, industrial equipment, renewable energy systems, and electric vehicles.
Equivalent
The CSD19532Q5B is a N-channel MOSFET known for its low RDS(on) and high efficiency. Equivalent products include the IRF3205, STP75NF75, and BSC025N06LS. However, always verify specifications such as voltage rating, current handling, and package type to ensure compatibility for your specific application.
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