CSD17579Q5A

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CSD17579Q5A

MOSFET N-CH 30V 25A 8VSON

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規格

Package Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 25A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 9.7mOhm @ 8A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 15.1 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1030 pF @ 15 V
PowerDissipation(Max) 3.1W (Ta), 36W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSONP (5x6)

概述

Description

CSD17579Q5A is a high-performance power management integrated circuit (IC) designed for applications such as DC-DC converters, battery management systems, and other electronic devices requiring efficient power regulation. This device typically features advanced control algorithms, low on-resistance MOSFETs, and integrated protection mechanisms, which enhance efficiency and reliability.
Key attributes include high switching frequencies, enabling compact design, and various packaging options to suit different thermal and space requirements. Additionally, it may support multiple input and output voltage configurations, making it versatile for diverse applications.
Overall, CSD17579Q5A represents a significant advancement in power management technology, offering features that cater to the growing demands for energy efficiency and performance in modern electronic systems.

Features

The CSD17579Q5A is a low-side power MOSFET designed for efficient switching applications. Key features include:
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
- On-Resistance (R_DS(on)): The device offers a low on-resistance of approximately 5.3 mΩ at V_GS of 10V, which enhances efficiency and minimizes power losses during operation.
- Current Handling: It can handle continuous drain currents of up to 70A, ensuring robust performance in demanding applications.
- Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for easy drive with logic-level signals.
- Package: It comes in a compact QFN package, facilitating easy integration into space-constrained designs.
- Thermal Performance: The device is designed for efficient thermal dissipation, making it suitable for high-performance applications.
Overall, the CSD17579Q5A is an efficient and versatile choice for power management solutions in various electronic devices.

Package

The CSD17579Q5A is packaged in a VSON (Very Thin Small Outline No-lead) 5x6 mm package. This type of package is designed for efficient thermal performance and space-saving in applications.

Pinout

The CSD17579Q5A is a N-channel MOSFET with a pin count of 5. The pin functions are as follows:
1. Gate (G): Controls the MOSFET's operation; the voltage applied here determines whether the device is on or off.
2. Drain (D): The terminal through which current exits the MOSFET when it is on.
3. Source (S): The terminal through which current enters the MOSFET when it is on.
4. D2 (D): Another drain connection; used for specific configurations in applications.
5. S2 (S): Another source connection; similarly, this is for enhanced design flexibility.
This device is typically used in power management applications due to its low on-resistance and high current handling capabilities.

Manufacturer

The CSD17579Q5A is manufactured by Texas Instruments (TI). Texas Instruments is a global semiconductor company headquartered in Dallas, Texas. It designs and manufactures a wide range of analog and digital integrated circuits (ICs) and embedded processors. TI is well-known for its innovations in various fields, including automotive, industrial, communication, and consumer electronics. The company is a leader in the development of technologies such as analog signal processing, microcontrollers, and digital signal processors (DSPs). TI's products are used in diverse applications, making it a significant player in the semiconductor industry.

Application

The CSD17579Q5A is a N-channel MOSFET widely used in applications such as synchronous DC-DC converters, power management systems, and battery management in consumer electronics, automotive, and industrial applications. Its low RDS(on) and fast switching capabilities make it suitable for efficient power conversion and high-frequency operations in various electronic devices.

Equivalent

The CSD17579Q5A is a power MOSFET. Equivalent products include the CSD17570Q5A, CSD17561Q5A, and CSD17577Q5A from Texas Instruments. Other manufacturers may have similar devices, such as the IRF series from Infineon or N-channel MOSFETs from ON Semiconductor. Always check specific datasheets for exact specifications and suitability for your application.

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