CSD16323Q3

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CSD16323Q3

MOSFET N-CH 25V 21A/60A 8VSON

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規格

Package Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 25 V
Current-ContinuousDrain(Id)@25°C 21A (Ta), 60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 3V, 8V
RdsOn(Max)@IdVgs 4.5mOhm @ 24A, 8V
Vgs(th)(Max)@Id 1.4V @ 250µA
GateCharge(Qg)(Max)@Vgs 8.4 nC @ 4.5 V
Vgs(Max) +10V, -8V
InputCapacitance(Ciss)(Max)@Vds 1300 pF @ 12.5 V
PowerDissipation(Max) 3W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSON-CLIP (3.3x3.3)

概述

Description

CSD16323Q3 is likely a course or module code, potentially related to computer science or software development, focusing on specific concepts or technologies. While the exact content may vary by institution, courses with such codes typically cover foundational topics in coding, software engineering practices, or programming languages.
In general, an introductory course like CSD16323Q3 might include topics such as algorithm design, data structures, software development methodologies, and basic programming skills. The course may also emphasize problem-solving, critical thinking, and collaborative projects to prepare students for more advanced studies or professional practice in the field.
For precise details on the curriculum, objectives, and prerequisites, it is advisable to consult the specific course syllabus or the educational institution offering it.

Features

The CSD16323Q3 is a low on-resistance, high-performance power MOSFET designed for various applications. Key features include:
1. Low RDS(on): Offers low on-state resistance, enhancing efficiency and reducing power loss.
2. High Voltage Rating: Capable of handling substantial voltages, making it suitable for demanding applications.
3. Fast Switching Speed: Optimized for fast switching, which improves overall system performance.
4. Thermal Performance: Excellent thermal characteristics ensure reliability under high load conditions.
5. Compact Package: Available in a small footprint, facilitating integration into space-constrained designs.
6. High Reliability: Designed to meet stringent reliability standards, making it suitable for automotive and industrial applications.
7. Versatile Applications: Ideal for use in power management, DC-DC converters, and motor control systems.
These features combine to make the CSD16323Q3 a robust choice for engineers seeking efficiency and reliability in their designs.

Package

The CSD16323Q3 is packaged in a 3mm x 3mm QFN (Quad Flat No-lead) package. This type of package provides efficient thermal performance and is designed for compact applications, suitable for power management and conversion.

Manufacturer

The manufacturer of the CSD16323Q3 is Texas Instruments (TI). Texas Instruments is a global semiconductor company that designs and manufactures a wide range of integrated circuits and electronic components. Founded in 1930 and headquartered in Dallas, Texas, TI is known for its innovations in analog and embedded processing technologies. The company serves a variety of markets, including industrial, automotive, personal electronics, communications, and computing. TI is recognized for its extensive portfolio of products, including power management solutions, microcontrollers, and signal processing devices.

Application

CSD16323Q3 is a high-performance power MOSFET used primarily in power management applications. Its application areas include DC-DC converters, motor drives, power supplies, and battery management systems. This device is suitable for both consumer electronics and industrial applications, offering high efficiency and fast switching capabilities, making it ideal for energy-efficient designs.

Equivalent

The CSD16323Q3 is a N-channel MOSFET from Texas Instruments. Equivalent products include the Infineon BSC025N06LS, ON Semiconductor NTD5866N, and Vishay SI7460DP. Always verify specifications such as voltage, current, RDS(on), and package type to ensure compatibility in your application.

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