圖片僅供參考

CSD13385F5T

Name: CSD13385F5T
Rating: 4.7 (12 reviews)

MOSFET N-CH 12V 4.3A 3PICOSTAR

製造商
製造商。部分 #CSD13385F5T
包
資料表
有現貨的7665

+BOM RFQ

100%原創；新

24小時準備發貨

365天保修

RFQ&；獲得更多折扣

規格

Supplier	Texas Instruments
Package	Tape & Reel (TR),Cut Tape (CT)
Series	FemtoFET™
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	12 V
Current-ContinuousDrain(Id)@25°C	4.3A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	1.8V, 4.5V
RdsOn(Max)@IdVgs	19mOhm @ 900mA, 4.5V
Vgs(th)(Max)@Id	1.2V @ 250µA
GateCharge(Qg)(Max)@Vgs	5 nC @ 4.5 V
Vgs(Max)	8V
InputCapacitance(Ciss)(Max)@Vds	674 pF @ 6 V
PowerDissipation(Max)	500mW (Ta)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	3-PICOSTAR

概述

Description

CSD13385F5T is TI’s NexFET N-channel enhancement‑mode power MOSFET. It’s designed for high‑efficiency switching in power‑management circuits, such as DC‑DC converters, synchronous buck regulators, load switches, and motor drives. The device combines low Rds(on) with fast switching (low gate charge) in a compact package, enabling high current density and good thermal performance for portable, automotive, and embedded systems.
Key specs to check in the datasheet (not fixed here): drain‑source voltage (Vds), continuous drain current (Id), Rds(on) at Vgs=4.5V/10V, total gate charge (Qg), input capacitances, and switching characteristics (td(on), td(off), tr, tf). Also review packaging, thermal resistance, and ESD ratings.
For exact electrical values, pinout, and application notes, consult the TI product page and the full CSD13385F5T datasheet.

Package

I don’t have live web access to look up CSD13385F5T. Please provide the manufacturer or a datasheet link (or paste the package marking/description) and I’ll identify the exact package type for you.

Pinout

Pin count: 5 (four package leads + exposed thermal/exposed pad).
Pin functions (typical for the F5 5-pin SON/SOT-23-5 MOSFET package):
- Pin 1: Gate (G) – gate drive input.
- Pin 2 & Pin 4: Source (S) – device source terminals (often tied internally).
- Pin 3: Drain lead (D).
- Exposed pad (bottom/top): Drain (D) and thermal/PCB heat-sink connection.
Device function: N‑channel enhancement‑mode power MOSFET used for high‑speed switching; the Gate controls conduction between Drain and Source; the exposed pad provides low thermal resistance and the main Drain connection. (Suffix “T” = tape-and-reel packaging.)

Manufacturer

- Manufacturer: Texas Instruments (TI).
- What kind of company: TI is an American multinational semiconductor company that designs and manufactures analog and mixed-signal integrated circuits, power management ICs, microcontrollers, DSPs, and related devices.

Application

Typical applications for CSD13385F5T include:
- High-side/low-side switching and load-switching in DC‑DC converters
- Synchronous buck/boost regulator stages
- Hot‑swap and reverse‑current protection
- Battery-powered devices (portable electronics, wearables)
- Small DC motor control
- LED driver power stages
- General power-switching in automotive and consumer electronics