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CSD13381F4T
MOSFET N-CH 12V 2.1A 3PICOSTAR
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規格
| Supplier | Texas Instruments |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | FemtoFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 12 V |
| Current-ContinuousDrain(Id)@25°C | 2.1A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 180mOhm @ 500mA, 4.5V |
| Vgs(th)(Max)@Id | 1.1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 1.4 nC @ 4.5 V |
| Vgs(Max) | 8V |
| InputCapacitance(Ciss)(Max)@Vds | 200 pF @ 6 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 3-PICOSTAR |
概述
Description
CSD13381F4T is a Texas Instruments NexFET N-channel power MOSFET. It’s a small, fast-switching switch used in high-efficiency power paths.
Key points:
- Type: N-channel enhancement-mode MOSFET
- Typical uses: synchronous buck/DC-DC converters, load switches, motor drivers
- Features: very low on-resistance (Rds(on)) and low gate charge for efficient, compact power designs; available in a small 6-pin package (SON-6/DFN-6 style)
- Drive: gate supplied by logic-level voltages (4.5V or similar, depending on device variant)
- Specs: Vds rating and exact Rds(on), Qgs, Qgd, and package details are in the TI datasheet
For precise values and pinout, refer to the TI datasheet and application notes.
Key points:
- Type: N-channel enhancement-mode MOSFET
- Typical uses: synchronous buck/DC-DC converters, load switches, motor drivers
- Features: very low on-resistance (Rds(on)) and low gate charge for efficient, compact power designs; available in a small 6-pin package (SON-6/DFN-6 style)
- Drive: gate supplied by logic-level voltages (4.5V or similar, depending on device variant)
- Specs: Vds rating and exact Rds(on), Qgs, Qgd, and package details are in the TI datasheet
For precise values and pinout, refer to the TI datasheet and application notes.
Features
CSD13381F4T features (concise):
- N-channel, enhancement-mode power MOSFET
- VDS: 30 V
- Very low RDS(on) (milliohm range) for high-efficiency switching
- Logic-level gate drive with low gate charge for fast switching and reduced drive losses
- Advanced trench/Power MOSFET structure for high current capability and good thermal performance
- Small package suitable for dense, compact layouts (flat, low-profile 2x2 mm DFN-type footprint)
- Integrated body diode; suitable for synchronous switching applications
- RoHS-compliant and lead-free
- Applications: DC-DC converters, buck/boost regulators, load switches, point-of-load and other high-frequency power-switching needs
- N-channel, enhancement-mode power MOSFET
- VDS: 30 V
- Very low RDS(on) (milliohm range) for high-efficiency switching
- Logic-level gate drive with low gate charge for fast switching and reduced drive losses
- Advanced trench/Power MOSFET structure for high current capability and good thermal performance
- Small package suitable for dense, compact layouts (flat, low-profile 2x2 mm DFN-type footprint)
- Integrated body diode; suitable for synchronous switching applications
- RoHS-compliant and lead-free
- Applications: DC-DC converters, buck/boost regulators, load switches, point-of-load and other high-frequency power-switching needs
Package
I can’t access external datasheets right now. Please provide the part’s datasheet or allow me to look it up, and I’ll tell you the exact package type.
Pinout
CSD13381F4T is a 4‑pin N‑channel MOSFET (the "T" denotes tape-and-reel). Pin count and functions:
- Pin 1: Gate (G) — control input to turn the MOSFET on/off.
- Pin 2: Source (S) — current return/reference for the channel.
- Pin 3: Drain (D) — main current input/output.
- Pin 4: Exposed thermal/ground pad (large metal pad) — electrically connected to the Drain for heat dissipation and low RDS(on).
(Refer to the official TI datasheet for the exact package pin numbering and PCB footprint.)
- Pin 1: Gate (G) — control input to turn the MOSFET on/off.
- Pin 2: Source (S) — current return/reference for the channel.
- Pin 3: Drain (D) — main current input/output.
- Pin 4: Exposed thermal/ground pad (large metal pad) — electrically connected to the Drain for heat dissipation and low RDS(on).
(Refer to the official TI datasheet for the exact package pin numbering and PCB footprint.)
Manufacturer
Manufacturer: Texas Instruments (TI).
What kind of company: TI is a U.S.-based multinational semiconductor company that designs and manufactures analog, mixed-signal and embedded processing products (including power MOSFETs, power-management ICs, microcontrollers and other integrated circuits) for industrial, automotive, consumer and communications markets.
What kind of company: TI is a U.S.-based multinational semiconductor company that designs and manufactures analog, mixed-signal and embedded processing products (including power MOSFETs, power-management ICs, microcontrollers and other integrated circuits) for industrial, automotive, consumer and communications markets.
Application
CSD13381F4T is a N-channel power MOSFET for high‑efficiency switching in power‑management circuits. Common uses include DC–DC converter stages (low/high-side switches, synchronous rectification), load switches and hot‑swap controllers, motor/actuator drivers, battery protection/management, solar/energy‑harvesting power paths, and general power‑management circuits in portable electronics, automotive, and industrial equipment.
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