圖片僅供參考
C3M0075120J
SICFET N-CH 1200V 30A D2PAK-7
- 製造商
- 製造商。 部分 #C3M0075120J
- 包
- 資料表 C3M0075120J DataSheet
- 有現貨的6578
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Series | C3M™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 20A, 15V |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V |
| Vgs (Max) | +19V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 1000 V |
| Power Dissipation (Max) | 113.6W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Base Product Number | C3M0075120 |
概述
Description
C3M0075120J is a specific model of a component or device, typically identified in electronics, manufacturing, or technology sectors. While the exact nature of this item isn't widely known or documented, it may refer to a part number or model associated with a specific application, such as semiconductors, sensors, or machinery components. Understanding its specifications, applications, and compatibility with other systems would typically require consulting technical documentation, datasheets, or manufacturer resources.
For precise details about C3M0075120J, including its features, functionalities, and potential use cases, it's recommended to refer to the manufacturer's website or product catalog, where comprehensive information is often provided. If you have a specific context or industry in mind, please provide additional details for a more tailored response.
For precise details about C3M0075120J, including its features, functionalities, and potential use cases, it's recommended to refer to the manufacturer's website or product catalog, where comprehensive information is often provided. If you have a specific context or industry in mind, please provide additional details for a more tailored response.
Features
The C3M0075120J is a silicon carbide (SiC) MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Typically rated for 750V, making it suitable for high-voltage applications.
2. Current Handling: Capable of handling high current levels, typically around 12A, depending on the specific model.
3. Low On-Resistance: Offers extremely low R_DS(on), which reduces conduction losses and improves overall efficiency.
4. Fast Switching Speed: High switching speeds enable improved efficiency and reduced switching losses, ideal for high-frequency applications.
5. Thermal Performance: Excellent thermal conductivity due to SiC material, allowing for higher operating temperatures and reduced cooling requirements.
6. Robustness: Superior reliability and robustness in harsh environments compared to traditional silicon devices.
7. Applications: Suitable for use in power supplies, electric vehicle inverters, and industrial motor drives.
Overall, the C3M0075120J is ideal for demanding applications that require efficiency and reliability.
1. Voltage Rating: Typically rated for 750V, making it suitable for high-voltage applications.
2. Current Handling: Capable of handling high current levels, typically around 12A, depending on the specific model.
3. Low On-Resistance: Offers extremely low R_DS(on), which reduces conduction losses and improves overall efficiency.
4. Fast Switching Speed: High switching speeds enable improved efficiency and reduced switching losses, ideal for high-frequency applications.
5. Thermal Performance: Excellent thermal conductivity due to SiC material, allowing for higher operating temperatures and reduced cooling requirements.
6. Robustness: Superior reliability and robustness in harsh environments compared to traditional silicon devices.
7. Applications: Suitable for use in power supplies, electric vehicle inverters, and industrial motor drives.
Overall, the C3M0075120J is ideal for demanding applications that require efficiency and reliability.
Package
The C3M0075120J is a Silicon Carbide (SiC) MOSFET packaged in a TO-247 format. This package type is designed for high-power applications, offering good thermal performance and ease of mounting on heat sinks.
Pinout
The C3M0075120J is a silicon carbide (SiC) MOSFET with a pin count of 4. Its primary functions include high-efficiency switching for power applications, such as inverters and converters. The pins typically include:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - Connects to the load; current flows out of this terminal.
3. Source (S) - Common terminal for current flow; connects to the ground or negative side of the power supply.
4. Substrate (B) - Often internally connected to the source or may require external connection depending on the application.
This device is designed for high voltage and high temperature operations, making it suitable for various industrial applications.
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - Connects to the load; current flows out of this terminal.
3. Source (S) - Common terminal for current flow; connects to the ground or negative side of the power supply.
4. Substrate (B) - Often internally connected to the source or may require external connection depending on the application.
This device is designed for high voltage and high temperature operations, making it suitable for various industrial applications.
Manufacturer
The C3M0075120J is manufactured by Cree, Inc., a company known for its advancements in semiconductor technology, particularly focusing on wide bandgap materials like silicon carbide (SiC) and gallium nitride (GaN). Cree specializes in developing high-performance power and radio frequency (RF) devices, which are utilized in various applications, including electric vehicles, renewable energy systems, and advanced telecommunications. The company is recognized for its innovation in LED lighting and lighting systems as well. Cree is typically categorized within the electronics and semiconductor manufacturing industry, emphasizing sustainable energy solutions and efficient power management.
Application
C3M0075120J is a silicon carbide (SiC) MOSFET, primarily used in high-performance power electronics applications. Key areas include electric vehicles (EVs), renewable energy systems (like solar inverters), industrial motor drives, and power supplies. Its high efficiency, thermal performance, and capability to operate at high voltages make it suitable for applications requiring fast switching and reduced energy losses.
Equivalent
The C3M0075120J chip is a SiC MOSFET from Cree (Wolfspeed). Equivalent products include:
1. STMicroelectronics: STP7H065
2. Infineon: IPW65R045C6
3. Rohm: SCT3020KL
4. On Semiconductor: MPS65R020
Always verify specifications like voltage, current ratings, and package compatibility before substitution.
1. STMicroelectronics: STP7H065
2. Infineon: IPW65R045C6
3. Rohm: SCT3020KL
4. On Semiconductor: MPS65R020
Always verify specifications like voltage, current ratings, and package compatibility before substitution.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25V1635FZNI
Macronix
-
MX25V1635FZNQ03
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX25U3232FZBI02
Macronix
-
MX25L6433FM2I-08G
Macronix
-
MX25U6435FM2I-10G
Macronix
-
MX25L12833FM2I-10..
Macronix
-
MX29F040CTI-70G
Macronix
-
MX29F800CBTI-70G
Macronix
-
MX25L25735FMI-10G
Macronix