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C3M0075120D
SICFET N-CH 1200V 30A TO247-3
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規格
| Series | C3M™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 20A, 15V |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 15 V |
| Vgs (Max) | +19V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 1000 V |
| Power Dissipation (Max) | 113.6W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Base Product Number | C3M0075120 |
概述
Description
C3M0075120D is a type of high-performance, compact, and efficient power module designed for various applications in electronics, particularly in power management systems. Typically, it is used in power converters and power supply circuits, providing features such as high efficiency, low thermal resistance, and compact design. The module may integrate multiple components, such as MOSFETs and drivers, to facilitate improved performance in voltage regulation and load handling. It is suitable for applications in telecommunications, industrial automation, and renewable energy systems. The C3M0075120D aims to deliver reliable operation while minimizing space requirements and energy loss, making it ideal for modern electronic devices where efficiency and size are critical.
Features
The C3M0075120D is a compact, high-efficiency power management integrated circuit (PMIC) designed for various applications including consumer electronics and industrial devices. Key features include:
1. Input Voltage Range: Typically supports a wide input voltage range, ensuring compatibility with various power sources.
2. Output Options: Provides multiple output voltages, allowing for flexible power supply configurations.
3. High Efficiency: Designed to minimize power loss, enhancing battery life in portable devices.
4. Low Quiescent Current: Reduces power consumption during standby, ideal for battery-powered applications.
5. Thermal Protection: Integrated thermal shutdown functionality prevents damage due to overheating.
6. Small Form Factor: Compact package size suitable for space-constrained designs.
7. Multiple Protection Features: Includes over-voltage, under-voltage, and short-circuit protection for enhanced reliability.
These features make the C3M0075120D suitable for applications like smartphones, tablets, and IoT devices, where efficient and reliable power management is critical.
1. Input Voltage Range: Typically supports a wide input voltage range, ensuring compatibility with various power sources.
2. Output Options: Provides multiple output voltages, allowing for flexible power supply configurations.
3. High Efficiency: Designed to minimize power loss, enhancing battery life in portable devices.
4. Low Quiescent Current: Reduces power consumption during standby, ideal for battery-powered applications.
5. Thermal Protection: Integrated thermal shutdown functionality prevents damage due to overheating.
6. Small Form Factor: Compact package size suitable for space-constrained designs.
7. Multiple Protection Features: Includes over-voltage, under-voltage, and short-circuit protection for enhanced reliability.
These features make the C3M0075120D suitable for applications like smartphones, tablets, and IoT devices, where efficient and reliable power management is critical.
Package
The C3M0075120D is a silicon carbide (SiC) MOSFET packaged in a TO-247 style housing. This package type is designed for high-power applications, providing efficient thermal management and ease of mounting in various electronic systems.
Pinout
The C3M0075120D is a silicon carbide (SiC) MOSFET with a pin count of 4. Its primary functions include high-efficiency power conversion, switching applications, and handling high voltages and temperatures. The key features include:
- Voltage Rating: 1200V
- Current Rating: Up to 7.5A
- Low On-Resistance: Reduces conduction losses
The pin configuration typically includes:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): Connects to the load and receives the output current.
3. Source (S): Connects to the ground or negative side of the circuit.
4. Body Diode (integrated): Allows current to flow when the MOSFET is off, providing a path for inductive loads.
This device is widely used in applications like power supplies, inverters, and motor drives due to its excellent thermal performance and efficiency.
- Voltage Rating: 1200V
- Current Rating: Up to 7.5A
- Low On-Resistance: Reduces conduction losses
The pin configuration typically includes:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): Connects to the load and receives the output current.
3. Source (S): Connects to the ground or negative side of the circuit.
4. Body Diode (integrated): Allows current to flow when the MOSFET is off, providing a path for inductive loads.
This device is widely used in applications like power supplies, inverters, and motor drives due to its excellent thermal performance and efficiency.
Manufacturer
The C3M0075120D is a silicon carbide (SiC) MOSFET manufactured by Cree, Inc., which is now known as Wolfspeed, Inc. Wolfspeed is a leading company in the development and production of wide bandgap semiconductor technologies, specializing in silicon carbide and gallium nitride materials. They focus on high-performance power and radio frequency (RF) devices that are used in various applications such as electric vehicles, renewable energy, and industrial power systems. Wolfspeed's innovations in wide bandgap semiconductors contribute to improved efficiency and performance in electronic systems.
Application
C3M0075120D is a SiC (Silicon Carbide) MOSFET typically used in high-power applications. Its major application areas include electric vehicles, renewable energy systems (like solar inverters), industrial motor drives, and power supplies. It is ideal for applications requiring high efficiency, thermal performance, and fast switching capabilities, enabling compact designs and improved power density in electronic systems.
Equivalent
The C3M0075120D chip, a 1200V, 50A SiC MOSFET, has several equivalent products, including:
1. C3M0075120K (Cree)
2. SCT3060 (SCT)
3. STP12S120 (STMicroelectronics)
4. MPSM120 (MPS)
5. FGA25N120 (Fairchild)
Always check specific datasheets for exact specifications and compatibility.
1. C3M0075120K (Cree)
2. SCT3060 (SCT)
3. STP12S120 (STMicroelectronics)
4. MPSM120 (MPS)
5. FGA25N120 (Fairchild)
Always check specific datasheets for exact specifications and compatibility.
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